Dislocation filtering in semiconductor superlattices with lattice‐matched and lattice‐mismatched layer materials

1986 ◽  
Vol 49 (17) ◽  
pp. 1101-1103 ◽  
Author(s):  
P. L. Gourley ◽  
T. J. Drummond ◽  
B. L. Doyle
Author(s):  
Y. Hsu ◽  
T. S. Kuan ◽  
W. I. Wang

Semiconductor superlattices or epitaxial overlayers have so far been grown mostly on (100)-oriented substrates. It has long been suspected that growth on surfaces such as (m11) could produce equally good or better epitaxial layers. In this work, we have systematically tested the growth of multi- or single-layered structures, including the GaAs/AlAs, AlAs/Ge, and GaAs/Si systems, on surfaces of different orientations. The crystallinity and defect mechanisms in the layers grown on (100), (311), and (511) surfaces at different temperatures were compared. In most cases we found that (311) surfaces can produce epitaxial layers as good as on (100) surfaces.Perfect lattice-matched GaAs/AIAs superlattices were grown on (311)A-, (311)B-, and (100)-oriented GaAs substrates. Superlattices with good layer morphology were achieved on all three surfaces at 600°C. Fig. 1(a) shows an image of a typical GaAs/AIAs superlattice grown on a (311)B surface. This superlattice exhibits sharp interface abruptness as indicated by the high-order satellites observed in the diffraction pattern in Fig. 1(b).


2016 ◽  
Vol 119 (22) ◽  
pp. 225701 ◽  
Author(s):  
P. T. Webster ◽  
A. J. Shalindar ◽  
N. A. Riordan ◽  
C. Gogineni ◽  
H. Liang ◽  
...  

1984 ◽  
Vol 45 (C5) ◽  
pp. C5-131-C5-137 ◽  
Author(s):  
M. V. Klein ◽  
C. Colvard ◽  
R. Fischer ◽  
H . Morkoç

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-183-C5-186
Author(s):  
J. BLEUSE ◽  
P. VOISIN ◽  
M. VOOS ◽  
L. L. CHANG ◽  
L. ESAKI

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