Theory of Semiconductor Heterojunctions

1982 ◽  
Vol 18 ◽  
Author(s):  
J. Pollmann ◽  
A. Mazur
Keyword(s):  
Band Structure ◽  
Transport Properties ◽  
Electronic Properties ◽  
Short Review ◽  
Band Edge ◽  
Band Structures ◽  
Semiconductor Heterojunctions ◽  
Lattice Matched

A short review of characteristic electronic properties of heterojunction interfaces is given. Band edge discontinuities and interface band structures for lattice-matched junctions are discussed in detail. The examples presented include non-polar and polar junctions as well as overlayer systems. The results of involved calculations are interpreted in terms of simple physically appealing pictures by directly relating the changes in bonds across an interface to the resulting bands in the interface band structure. The meaning of the results for the transport properties of semiconductor heterojunctions is briefly assessed.

Electronic structure and transport properties of graphene/h-BN controlled by boundary potential and magnetic field

2020 ◽  
Vol 34 (16) ◽  
pp. 2050180
Author(s):  
Jian Sun ◽  
Lei Xu ◽  
Jun Zhang
Keyword(s):  
Magnetic Field ◽  
Electronic Structure ◽  
Band Structure ◽  
Transport Properties ◽  
Energy Gap ◽  
Edge State ◽  
Stable Configuration ◽  
Edge States ◽  
Boundary Potential ◽  
Lattice Matched

We study the band structure of the lattice-matched graphene/[Formula: see text]-BN bilayer system in the most stable configuration. An effective way to individually manipulate the edge state by the boundary potentials is proposed. It is shown that the boundary potential can not only shift and deform the edge bands, but also modify the energy gap. We also explore the transport properties of graphene/[Formula: see text]-BN under a magnetic field. The boundary potential can change the distribution of the edge states, resulting in an interesting evolution of the quantized conductance.

Effect of Electron-Phonon Coupling on Transport Properties of Monolayers of ZrS2, BiI3 and PbI2: A thermoelectric Perspective

2021 ◽  
Author(s):  
Gautam Sharma ◽  
Vineet Kumar Pandey ◽  
Shouvik Datta ◽  
Prasenjit Ghosh
Keyword(s):  
Relaxation Time ◽  
Band Structure ◽  
Transport Properties ◽  
Thermoelectric Properties ◽  
Thermoelectric Materials ◽  
Waste Heat ◽  
Transport Coefficients ◽  
Electrical Energy ◽  
Phonon Coupling ◽  
Electron Phonon Coupling

Thermoelectric materials are used for conversion of waste heat to electrical energy. The transport coefficients that determine their thermoelectric properties depend on the band structure and the relaxation time of...

scholarly journals Electronic Band Structure and Transport Properties of the Cluster Compound Ag3Tl2Mo15Se19

2019 ◽  
Vol 58 (9) ◽  
pp. 5533-5542 ◽  
Author(s):  
Patrick Gougeon ◽  
Philippe Gall ◽  
Rabih Al Rahal Al Orabi ◽  
Benoit Boucher ◽  
Bruno Fontaine ◽  
...  
Keyword(s):  
Band Structure ◽  
Transport Properties ◽  
Electronic Band Structure ◽  
Cluster Compound ◽  
Electronic Band

Band Structure and Optical Gain of 1.3 um GaAsSbN/GaAs Compressively Strained Quantum Well Laser

2007 ◽  
Vol 31 ◽  
pp. 95-97
Author(s):  
B. Dong ◽  
W.J. Fan ◽  
Y.X. Dang
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Optical Gain ◽  
Band Structures ◽  
Quantum Well Laser ◽  
Suitable Combination ◽  
Gain Spectra ◽  
Strained Quantum Well

The band structures and optical gain spectra of GaAsSbN/GaAs compressively strained quantum well (QW) were studied using 10-band k.p approach. We found that a higher Sb and N composition in the quantum well and a thicker well give longer emitting wavelength. The result also shows a suitable combination of Sb and N composition, and QW thickness can achieve 1.3 μm lasing. And, the optical gain spectra with different carrier concentrations will be obtained.

Band structure and electronic properties of InP

1975 ◽  
Vol 25 (2) ◽  
pp. 174-183 ◽  
Author(s):  
H. Neumann ◽  
E. Hess ◽  
I. Topol
Keyword(s):  
Band Structure ◽  
Electronic Properties

Insights into the electronic properties of InGaAsN: the effect of nitrogen from band structure to devices

2002 ◽  
Vol 17 (8) ◽  
pp. 843-850 ◽  
Author(s):  
Steven R Kurtz ◽  
Normand A Modine ◽  
Eric D Jones ◽  
Andrew A Allerman ◽  
John F Klem
Keyword(s):  
Band Structure ◽  
Electronic Properties

Band structure effects of transport properties in icosahedral quasicrystals

1993 ◽  
Vol 71 (25) ◽  
pp. 4166-4169 ◽  
Author(s):  
Takeo Fujiwara ◽  
Susumu Yamamoto ◽  
Guy Trambly de Laissardière
Keyword(s):  
Band Structure ◽  
Transport Properties ◽  
Icosahedral Quasicrystals

CHANGES INDUCED IN THE SURFACE ELECTRONIC STRUCTURE OF Be(0001) AFTER Si ADSORPTION

2002 ◽  
Vol 09 (02) ◽  
pp. 687-691
Author(s):  
L. I. JOHANSSON ◽  
C. VIROJANADARA ◽  
T. BALASUBRAMANIAN
Keyword(s):  
Electronic Structure ◽  
Band Structure ◽  
Band Gap ◽  
Electronic Properties ◽  
Surface State ◽  
Core Level ◽  
Clean Surface ◽  
Core Level Spectrum ◽  
Surface Band ◽  
Surface Electronic Structure

A study of effects induced in the Be 1s core level spectrum and in the surface band structure after Si adsorption on Be(0001) is reported. The changes in the Be 1s spectrum are quite dramatic. The number of resolvable surface components and the magnitude of the shifts do decrease and the relative intensities of the shifted components are drastically different compared to the clean surface. The surface band structure is also strongly affected after Si adsorption and annealing. At [Formula: see text] the surface state is found to move down from 2.8 to 4.1 eV. The band also splits at around 0.5 Å-1 along both the [Formula: see text] and [Formula: see text] directions. At [Formula: see text] and beyond [Formula: see text] only one surface state is observed in the band gap instead of the two for the clean surface. Our findings indicate that a fairly small amount of Si in the outer atomic layers strongly modifies the electronic properties of these layers.

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