Role of interface strain in a lattice-matched heterostructure

1990 ◽  
Vol 64 (5) ◽  
pp. 555-558 ◽  
Author(s):  
Mark S. Hybertsen
Keyword(s):  
Interface Strain ◽  
Lattice Matched

Role of the Electrode Morphology, Thickness and Orientation in the Ferroelectric Performance of Epitaxial Pb(Zr,Ti)O3 Thin Films

2000 ◽  
Vol 655 ◽  
Author(s):  
Cesar Guerrero ◽  
Florencio Sánchez ◽  
José Roldán ◽  
Frank Güell ◽  
María V. García-Cuenca
Keyword(s):  
Electrode Materials ◽  
Stabilized Zirconia ◽  
Large Thickness ◽  
Low Dielectric ◽  
Thin Film Capacitors ◽  
Pzt Thin Film ◽  
Ferroelectric Layer ◽  
Ferroelectric Capacitors ◽  
Lattice Matched

AbstractA comparison of pulsed laser deposited PbZr0.53Ti0.47O3 (PZT) thin film capacitors with SrRuO3 (SRO) and LaNiO3 (LNO) electrodes on (001) yttria-stabilized zirconia (YSZ) and lattice matched (001) LaAlO3 substrates is presented. Both electrode materials allow for the formation of ferroelectric capacitors with large remnant polarization (20-30 μC/cm2) and negligible fatigue, although slight differences arise regarding the promotion of either the rhombohedral or tetragonal phases of PZT. Far more crucial seems to be the tendency of SrRuO3 to develop a rougher surface at either small (<30 nm) or large thickness (>100 nm), and on YSZ substrates. In those cases a highly defective and possibly low dielectric interface forms between the electrode and the ferroelectric layer, resulting in greatly degraded ferroelectric performance. LaNiO3 is free from these limitations except for the cracks forming at very large thickness (>300 nm), and therefore appears as a more versatile electrode material.

The role of ion-beam cleaning in the growth of strained-layer epitaxial thin transition metal films

1987 ◽  
Vol 2 (4) ◽  
pp. 446-455 ◽  
Author(s):  
Sung I. Park ◽  
A. Marshall ◽  
R. H. Hammond ◽  
T. H. Geballe ◽  
J. Talvacchio
Keyword(s):  
Tunnel Junctions ◽  
Ion Beam ◽  
Surface Damage ◽  
Metal Films ◽  
Strained Layer ◽  
Transmission Electron ◽  
Lattice Matched

Low-energy ion-beam cleaning of the substrates prior to a deposition greatly enhances the quality of ultrathin (< 100 Å) refractory superconducting (Nb, V) films. Using this technique Nb films as thin as 7 Å have been grown, from which good tunnel junctions have been fabricated. Both the native films and the tunnel junctions are sturdy and can be thermally recycled without any degradation. In-situ surface study along with transmission electron microscopy (TEM) results suggest the removal of the carbon atoms from the surface of the substrate without an apparent surface damage as the causes of the improvement. The TEM results indicate that the Nb films grow perfectly lattice matched to the sapphire substrate when the substrate is ion-beam cleaned. This strained-layer epitaxy is observed up to 40 Å, the maximum thickness investigated through TEM.

scholarly journals Electro-optic effect in strained and lattice matched multiquantum well structures — Role of excitonic resonances

1990 ◽  
Vol 8 (3) ◽  
pp. 317-321 ◽  
Author(s):  
J. Pamulapati ◽  
J.P. Loehr ◽  
J. Singh ◽  
P.K. Bhattacharya ◽  
M.J. Ludowise
Keyword(s):  
Electro Optic ◽  
Lattice Matched ◽  
Multiquantum Well

Interface Strain and the Valence Band Offset at the Lattice Matched In0.53Ga0.47As/InP (001) Interface

1989 ◽  
Vol 159 ◽  
Author(s):  
Mark S. Hybertsen
Keyword(s):  
Valence Band ◽  
Minimum Energy ◽  
Energy Structure ◽  
Band Offset ◽  
Valence Band Offset ◽  
X Ray ◽  
Interface Strain ◽  
Interface Bond ◽  
Lattice Matched ◽  
Good Agreement

ABSTRACTTotal energy minimization calculations show that the interface bonds are strained in nominally lattice matched In0.53 Ga0.47As/InP (001) heterostructures, in agreement with recent X-ray measurements. Anion intermixing relieves the interface strain. The calculated valence band offset varies with the interface bond lengths so the minimum energy structure must be used for a given composition. Then the calculated offset is independent of composition and is in good agreement with experiment. A simple model exhibits the qualitative features revealed by these calculations.

Electrical Properties of Quantum Wells in III-NITRIDE Alloys and the Role of Defects

2013 ◽  
Vol 1617 ◽  
pp. 3-11
Author(s):  
Daniela Cavalcoli ◽  
Albert Minj ◽  
Saurabh Pandey ◽  
Beatrice Fraboni ◽  
Anna Cavallini
Keyword(s):  
Quantum Wells ◽  
High Frequency ◽  
Extended Defects ◽  
Ultraviolet Photodetector ◽  
Light Emitters ◽  
Electrical And Optical Properties ◽  
Present Contribution ◽  
Dimensional Electron Gas ◽  
Lattice Matched

ABSTRACTIII-nitrides (III-Ns) semiconductors and their alloys have shown in the last few years high potential for interesting applications in photonics and electronics. III-Ns based heterostructures (HS) have been under wide investigation for different applications such as high frequency transistors, ultraviolet photodetector, light emitters etc. In the present contribution a III-Ns based heterostructure, in particular the nearly lattice matched Al1-xInxN/AlN/GaN HS will be discussed. The formation of the two dimensional electron gas (2DEG), its origin, its electrical and optical properties, the confined subband states in the well and its effect on the conduction mechanisms have been studied. Moreover, extended defects and their effect on the degradation phenomena of the 2DEG have been analyzed.

Role of interface strain in atomic layer epitaxy growth kinetics of InxGa1−xAs

1991 ◽  
Vol 114 (1-2) ◽  
pp. 31-37 ◽  
Author(s):  
Y. Sakuma ◽  
M. Ozeki ◽  
K. Kodama ◽  
N. Ohtsuka
Keyword(s):  
Growth Kinetics ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Interface Strain ◽  
Kinetics Of
Sign in / Sign up

Export Citation Format

Share Document