Demonstration of the effects of interface strain on band offsets in lattice‐matched III‐V semiconductor superlattices

1990 ◽  
Vol 57 (6) ◽  
pp. 578-580 ◽  
Author(s):  
J. S. Nelson ◽  
S. R. Kurtz ◽  
L. R. Dawson ◽  
J. A. Lott
Keyword(s):  
Semiconductor Superlattices ◽  
Band Offsets ◽  
Interface Strain ◽  
Lattice Matched

scholarly journals Feature Article - Semiconductor Superlattices with Small Band Offsets

1998 ◽  
Vol 93 (4) ◽  
pp. 567-600 ◽  
Author(s):  
G. Yang ◽  
L.A. Lewandowski ◽  
J.K. Furdyna ◽  
L.R. Ram-Mohan
Keyword(s):  
Semiconductor Superlattices ◽  
Feature Article ◽  
Band Offsets ◽  
Small Band

Effects of substrate orientation on growth of epitaxial layers

1996 ◽  
Vol 54 ◽  
pp. 948-949
Author(s):  
Y. Hsu ◽  
T. S. Kuan ◽  
W. I. Wang
Keyword(s):  
Diffraction Pattern ◽  
High Order ◽  
Sharp Interface ◽  
Epitaxial Layers ◽  
Semiconductor Superlattices ◽  
Substrate Orientation ◽  
Perfect Lattice ◽  
Gaas Substrates ◽  
Different Temperatures ◽  
Lattice Matched

Semiconductor superlattices or epitaxial overlayers have so far been grown mostly on (100)-oriented substrates. It has long been suspected that growth on surfaces such as (m11) could produce equally good or better epitaxial layers. In this work, we have systematically tested the growth of multi- or single-layered structures, including the GaAs/AlAs, AlAs/Ge, and GaAs/Si systems, on surfaces of different orientations. The crystallinity and defect mechanisms in the layers grown on (100), (311), and (511) surfaces at different temperatures were compared. In most cases we found that (311) surfaces can produce epitaxial layers as good as on (100) surfaces.Perfect lattice-matched GaAs/AIAs superlattices were grown on (311)A-, (311)B-, and (100)-oriented GaAs substrates. Superlattices with good layer morphology were achieved on all three surfaces at 600°C. Fig. 1(a) shows an image of a typical GaAs/AIAs superlattice grown on a (311)B surface. This superlattice exhibits sharp interface abruptness as indicated by the high-order satellites observed in the diffraction pattern in Fig. 1(b).

scholarly journals Optical properties of InAsBi and optimal designs of lattice-matched and strain-balanced III-V semiconductor superlattices

2016 ◽  
Vol 119 (22) ◽  
pp. 225701 ◽  
Author(s):  
P. T. Webster ◽  
A. J. Shalindar ◽  
N. A. Riordan ◽  
C. Gogineni ◽  
H. Liang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Optimal Designs ◽  
Semiconductor Superlattices ◽  
Lattice Matched
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