The Structure of Hydrogenated Amorphous Silicon-Carbon Alloys as Investigated by Exafs

1991 ◽  
Vol 219 ◽  
Author(s):  
S. Pascarelli ◽  
F. Boscherini ◽  
S. Mobilio ◽  
F. Evangelisti
Keyword(s):  
Amorphous Silicon ◽  
Local Structure ◽  
Hydrogenated Amorphous Silicon ◽  
Coordination Shell ◽  
Average Concentration ◽  
X Ray ◽  
Silicon Carbon ◽  
X Ray Absorption ◽  
Hydrogenated Amorphous ◽  
Average Bond

ABSTRACTWe have studied the local structure of hydrogenated amorphous silicon-carbon alloy films, a-Si1−xCx:H, by measuring the extended x-ray absorption fine-structure (EXAFS) at the Si K edge.We find that first coordination shell average bond lengths are 2.35 Å for Si-Si and 1.86 Å for Si-C and are constant with concentration to within × 0.015 Å.By comparing the composition of the first coordination shell around Si with the average concentration we show that the alloy tends to be chemically ordered, in that heteroatomic bonds are preferred.

Photo-Oxidation of Hydrogenated Amorphous Silicon-Carbon Alloys

1989 ◽  
Vol 158 ◽  
Author(s):  
P. John ◽  
I.M. Odeh ◽  
A. Qayyum ◽  
J.I.B. Wilson
Keyword(s):  
Amorphous Silicon ◽  
Photoelectron Spectroscopy ◽  
Crystalline Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Rf Discharge ◽  
Silicon Substrates ◽  
Capacitively Coupled ◽  
X Ray ◽  
Silicon Carbon ◽  
Hydrogenated Amorphous

ABSTRACTHydrogenated amorphous silicon-carbon alloys, a-Si:C:H, have been deposited as thin films (d=0.1-0.5 micron) on crystalline silicon substrates from a capacitively coupled rf discharge in silane-propane mixtures. Variations in the stoichiometry of the films were achieved by altering the ratio of SiH4 to C3H8 flow rates at a sbstrate temperature in the range 240-260°C and total pressure between 30-70 mtorr. The silicon to carbon ratios were established by X-ray photoelectron spectroscopy, XPS, and the hydrogen content and distribution by infra-red spectroscopy.

Structure of platinum-hydrogenated amorphous silicon interfaces studied by fluorescence-detected x-ray absorption spectroscopy

1985 ◽  
Vol 77-78 ◽  
pp. 1023-1026 ◽  
Author(s):  
Hiroyuki Oyanagi ◽  
Akihisa Matsuda ◽  
Tadashi Matsushita ◽  
Hidetoshi Okushi ◽  
Takehiko Ishiguro ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Absorption Spectroscopy ◽  
Hydrogenated Amorphous Silicon ◽  
X Ray ◽  
X Ray Absorption ◽  
Hydrogenated Amorphous

Extended x-ray absorption fine-structure study of hydrogenated amorphous silicon-germanium alloys

1985 ◽  
Vol 31 (2) ◽  
pp. 1028-1033 ◽  
Author(s):  
L. Incoccia ◽  
S. Mobilio ◽  
M. G. Proietti ◽  
P. Fiorini ◽  
C. Giovannella ◽  
...  
Keyword(s):  
Fine Structure ◽  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Hydrogenated Amorphous Silicon ◽  
Structure Study ◽  
X Ray ◽  
Absorption Fine ◽  
Amorphous Silicon Germanium ◽  
X Ray Absorption ◽  
Hydrogenated Amorphous

Hydrogenated Nanocrystalline Silicon Thin Film Transistor Array for X-ray Detector Application

2008 ◽  
Vol 1066 ◽  
Author(s):  
Kyung-Wook Shin ◽  
Mohammad R. Esmaeili-Rad ◽  
Andrei Sazonov ◽  
Arokia Nathan
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Threshold Voltage ◽  
Hydrogenated Amorphous Silicon ◽  
Nanocrystalline Silicon ◽  
Amorphous Selenium ◽  
Breakdown Field ◽  
Storage Capacitor ◽  
X Ray ◽  
Hydrogenated Amorphous

ABSTRACTHydrogenated nanocrystalline silicon (nc-Si:H) has strong potential to replace the hydrogenated amorphous silicon (a-Si:H) in thin film transistors (TFTs) due to its compatibility with the current industrial a-Si:H processes, and its better threshold voltage stability [1]. In this paper, we present an experimental TFT array backplane for direct conversion X-ray detector, using inverted staggered bottom gate nc-Si:H TFT as switching element. The TFTs employed a nc-Si:H/a-Si:H bilayer as the channel layer and hydrogenated amorphous silicon nitride (a-SiNx) as the gate dielectric; both layers deposited by plasma enhanced chemical vapor deposition (PECVD) at 280°C. Each pixel consists of a switching TFT, a charge storage capacitor (Cpx), and a mushroom electrode which serves as the bottom contact for X-ray detector such as amorphous selenium photoconductor. The chemical composition of the a-SiNx was studied by Fourier transform infrared spectroscopy. Current-voltage measurements of the a-SiNx film demonstrate that a breakdown field of 4.3 MV/cm.. TFTs in the array exhibits a field effect mobility (μEF) of 0.15 cm2/V·s, a threshold voltage (VTh) of 5.71 V, and a subthreshold leakage current (Isub) of 10−10 A. The fabrication sequence and TFT characteristics will be discussed in details.

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