Structure of hydrogenated amorphous silicon-carbon alloys as investigated by extended x-ray-absorption fine structure

1992 ◽  
Vol 45 (4) ◽  
pp. 1650-1654 ◽  
Author(s):  
S. Pascarelli ◽  
F. Boscherini ◽  
S. Mobilio ◽  
F. Evangelisti
Keyword(s):  
Fine Structure ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
X Ray ◽  
Absorption Fine ◽  
Silicon Carbon ◽  
X Ray Absorption ◽  
Hydrogenated Amorphous

Extended x-ray absorption fine-structure study of hydrogenated amorphous silicon-germanium alloys

1985 ◽  
Vol 31 (2) ◽  
pp. 1028-1033 ◽  
Author(s):  
L. Incoccia ◽  
S. Mobilio ◽  
M. G. Proietti ◽  
P. Fiorini ◽  
C. Giovannella ◽  
...  
Keyword(s):  
Fine Structure ◽  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Hydrogenated Amorphous Silicon ◽  
Structure Study ◽  
X Ray ◽  
Absorption Fine ◽  
Amorphous Silicon Germanium ◽  
X Ray Absorption ◽  
Hydrogenated Amorphous

The Structure of Hydrogenated Amorphous Silicon-Carbon Alloys as Investigated by Exafs

1991 ◽  
Vol 219 ◽  
Author(s):  
S. Pascarelli ◽  
F. Boscherini ◽  
S. Mobilio ◽  
F. Evangelisti
Keyword(s):  
Amorphous Silicon ◽  
Local Structure ◽  
Hydrogenated Amorphous Silicon ◽  
Coordination Shell ◽  
Average Concentration ◽  
X Ray ◽  
Silicon Carbon ◽  
X Ray Absorption ◽  
Hydrogenated Amorphous ◽  
Average Bond

ABSTRACTWe have studied the local structure of hydrogenated amorphous silicon-carbon alloy films, a-Si1−xCx:H, by measuring the extended x-ray absorption fine-structure (EXAFS) at the Si K edge.We find that first coordination shell average bond lengths are 2.35 Å for Si-Si and 1.86 Å for Si-C and are constant with concentration to within × 0.015 Å.By comparing the composition of the first coordination shell around Si with the average concentration we show that the alloy tends to be chemically ordered, in that heteroatomic bonds are preferred.

Photo-Oxidation of Hydrogenated Amorphous Silicon-Carbon Alloys

1989 ◽  
Vol 158 ◽  
Author(s):  
P. John ◽  
I.M. Odeh ◽  
A. Qayyum ◽  
J.I.B. Wilson
Keyword(s):  
Amorphous Silicon ◽  
Photoelectron Spectroscopy ◽  
Crystalline Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Rf Discharge ◽  
Silicon Substrates ◽  
Capacitively Coupled ◽  
X Ray ◽  
Silicon Carbon ◽  
Hydrogenated Amorphous

ABSTRACTHydrogenated amorphous silicon-carbon alloys, a-Si:C:H, have been deposited as thin films (d=0.1-0.5 micron) on crystalline silicon substrates from a capacitively coupled rf discharge in silane-propane mixtures. Variations in the stoichiometry of the films were achieved by altering the ratio of SiH4 to C3H8 flow rates at a sbstrate temperature in the range 240-260°C and total pressure between 30-70 mtorr. The silicon to carbon ratios were established by X-ray photoelectron spectroscopy, XPS, and the hydrogen content and distribution by infra-red spectroscopy.

Structure of platinum-hydrogenated amorphous silicon interfaces studied by fluorescence-detected x-ray absorption spectroscopy

1985 ◽  
Vol 77-78 ◽  
pp. 1023-1026 ◽  
Author(s):  
Hiroyuki Oyanagi ◽  
Akihisa Matsuda ◽  
Tadashi Matsushita ◽  
Hidetoshi Okushi ◽  
Takehiko Ishiguro ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Absorption Spectroscopy ◽  
Hydrogenated Amorphous Silicon ◽  
X Ray ◽  
X Ray Absorption ◽  
Hydrogenated Amorphous

scholarly journals Near-Edge X-Ray Absorption Fine Structure of Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Films Prepared by Pulsed Laser Deposition

2009 ◽  
Vol 2009 ◽  
pp. 1-5 ◽  
Author(s):  
Shinya Ohmagari ◽  
Tsuyoshi Yoshitake ◽  
Akira Nagano ◽  
Sausan AL-Riyami ◽  
Ryota Ohtani ◽  
...  
Keyword(s):  
Fine Structure ◽  
Substrate Temperature ◽  
Amorphous Carbon ◽  
Pulsed Laser ◽  
X Ray ◽  
Hydrogenated Amorphous Carbon ◽  
Absorption Fine ◽  
Ultrananocrystalline Diamond ◽  
X Ray Absorption ◽  
Hydrogenated Amorphous

The atomic bonding configuration of ultrananocrystalline diamond (UNCD)/hydrogenated amorphous carbon (a-C:H) films prepared by pulsed laser ablation of graphite in a hydrogen atmosphere was examined by near-edge X-ray absorption fine structure spectroscopy. The measured spectra were decomposed with simple component spectra, and they were analyzed in detail. As compared to the a-C:H films deposited at room substrate-temperature, the UNCD/a-C:H and nonhydrogenated amorphous carbon (a-C) films deposited at a substrate-temperature of exhibited enhanced and peaks. At the elevated substrate-temperature, the and bonds formation is enhanced while the C–H and C–C bonds formation is suppressed. The UNCD/a-C:H film showed a larger C–C peak than the a-C film deposited at the same elevated substrate-temperature in vacuum. We believe that the intense C–C peak is evidently responsible for UNCD crystallites existence in the film.

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