Extended x-ray absorption fine-structure study of hydrogenated amorphous silicon-germanium alloys

1985 ◽  
Vol 31 (2) ◽  
pp. 1028-1033 ◽  
Author(s):  
L. Incoccia ◽  
S. Mobilio ◽  
M. G. Proietti ◽  
P. Fiorini ◽  
C. Giovannella ◽  
...  
2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Hiroyuki Ikemoto ◽  
Takafumi Miyanaga

AbstractIn this review, we make a survey of the structure studies for the chalcogen elements and several chalcogenides in liquid, amorphous and nanosized state by using X-ray absorption fine structure (XAFS). The chalcogen elements have hierarchic structures; the chain structure constructed with the strong covalent bond as a primary structure, and the weaker interaction between chains as a secondary one. Existence of these two kinds of interactions induces exotic behaviors in the liquid, amorphous and nanosized state of the chalcogen and chalcogenides. XAFS is a powerful structure analysis technique for multi-element systems and the disordered materials, so it is suitable for the study of such as liquid, amorphous and nanosized mixtures. In section 2, the structures for the liquid state are discussed, which show the interesting semiconductor-metal transition depending on their temperatures and components. In section 3, the structure for the amorphous states are discussed. Especially, some of chalcogens and chalcogenides present the photostructural change, which is important industrial application. In section 4, the structures of nanosized state, nanoparticles and isolated chain confined into the narrow channel, are discussed. The studies of the nanoparticle and the isolated chain reveal the alternative role between the intrachain covalent bonds and the interchain interaction.


1990 ◽  
Vol 192 ◽  
Author(s):  
Hideki Matsumura ◽  
Masaaki Yamaguchi ◽  
Kazuo Morigaki

ABSTRACTHydrogenated amorphous silicon-germanium (a-SiGe:H) films are prepared by the catalytic chemical vapor deposition (Cat-CVD) method using a SiH4, GeH4 and H4 gas mixture. Properties of the films are investigated by the photo-thermal deflection spectroscopy (PDS) and electron spin resonance (ESR) measurements, in addition to the photo-conductive and structural studies. It is found that the characteristic energy of Urbach tail, ESR spin density and other photo-conductive properties of Cat-CVD a-SiGe:H films with optical band gaps around 1.45 eV are almost equivalent to those of the device quality glow discharge hydrogenated amorphous silicon (a-Si:H).


1984 ◽  
Vol 30 (2) ◽  
pp. 672-677 ◽  
Author(s):  
P. A. Montano ◽  
W. Schulze ◽  
B. Tesche ◽  
G. K. Shenoy ◽  
T. I. Morrison

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