Extended x-ray-absorption fine-structure study of hydrogenated amorphous silicon-germanium alloys. II. Dependence of bond length and coordination on composition

1988 ◽  
Vol 38 (3) ◽  
pp. 1942-1946 ◽  
Author(s):  
Yoichi Nishino ◽  
Shin-ichi Muramatsu ◽  
Yukio Takano ◽  
Hiroshi Kajiyama
Keyword(s):  
Fine Structure ◽  
Bond Length ◽  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Hydrogenated Amorphous Silicon ◽  
Structure Study ◽  
X Ray ◽  
Amorphous Silicon Germanium ◽  
X Ray Absorption ◽  
Hydrogenated Amorphous

Extended x-ray absorption fine-structure study of hydrogenated amorphous silicon-germanium alloys

1985 ◽  
Vol 31 (2) ◽  
pp. 1028-1033 ◽  
Author(s):  
L. Incoccia ◽  
S. Mobilio ◽  
M. G. Proietti ◽  
P. Fiorini ◽  
C. Giovannella ◽  
...  
Keyword(s):  
Fine Structure ◽  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Hydrogenated Amorphous Silicon ◽  
Structure Study ◽  
X Ray ◽  
Absorption Fine ◽  
Amorphous Silicon Germanium ◽  
X Ray Absorption ◽  
Hydrogenated Amorphous

Properties of Catalytic-Cvd Amorphous Silicon-Germanium (a-SiGe:H)

1990 ◽  
Vol 192 ◽  
Author(s):  
Hideki Matsumura ◽  
Masaaki Yamaguchi ◽  
Kazuo Morigaki
Keyword(s):  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Characteristic Energy ◽  
Optical Band Gaps ◽  
Spin Resonance ◽  
Amorphous Silicon Germanium ◽  
Conductive Properties ◽  
Hydrogenated Amorphous

ABSTRACTHydrogenated amorphous silicon-germanium (a-SiGe:H) films are prepared by the catalytic chemical vapor deposition (Cat-CVD) method using a SiH4, GeH4 and H4 gas mixture. Properties of the films are investigated by the photo-thermal deflection spectroscopy (PDS) and electron spin resonance (ESR) measurements, in addition to the photo-conductive and structural studies. It is found that the characteristic energy of Urbach tail, ESR spin density and other photo-conductive properties of Cat-CVD a-SiGe:H films with optical band gaps around 1.45 eV are almost equivalent to those of the device quality glow discharge hydrogenated amorphous silicon (a-Si:H).

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