Undoped GaSb Growth by MOCVD

1990 ◽  
Vol 216 ◽  
Author(s):  
Yan Kuin Su ◽  
Fuh Shyang Juang
Keyword(s):  
Lattice Mismatch ◽  
Hole Concentration ◽  
Photoluminescence Intensity ◽  
Tem Analysis ◽  
Gaas Substrates ◽  
Large Lattice ◽  
Large Lattice Mismatch ◽  
Strain Layer Superlattice ◽  
Highly Strained ◽  
Epilayer Surface

ABSTRACTUndoped GaSb epilayers have been grown on (100) GaSb and S.I. GaAs substrates. The effects of growth temperatures and TMSb/TEGa mole fraction ratios on the epitaxial properties of surface morphology, growth rate, hole concentration and mobility (300K and 77K) have been studied. The lowest concentration 1.8x101 6 cm- 3 (77K) and the highest mdobility 1447 cm2/V.s (77K) can be obtained under V/III ratio of 6.64 at 550°C. Photoluminescence intensity was found to be a function of the V/III ratios. When V/III ratios increased or decreased beyond 6-8, the BE peaks disappeared and PL spectra became roughened.To reduce the effects of large lattice-mismatch in highly strained GaSb/GaAs system (7% mismatch) on the electrical properties, a 10-period In0.3Ga0.7As/GaAs (60A/40A) strain layer superlattice (SLS) has been grown on GaAs substrates as a dislocation filter before the GaSb epitaxial growth. From the comparison of 77K Hall mobility of GaSb/GaAs as a function of growth temperature with that of GaSb/SLS/GaAs, it was clearly observed that the epilayers grown on SLS structures have higher mobility than those grown directly on GaAs substrates. From the TEM analysis, we observed that all dislocations propagated up to the GaSb epilayer surface in the GaSb/GaAs system but some of the dislocations bending before reaching the epilayer surface in the GaSb/SLS/GaAs system.

Structural Effects in Al(111)/Si(111) Heteroepitaxy by Partially Ionized Beam Deposition α

1988 ◽  
Vol 116 ◽  
pp. 465-470 ◽  
Author(s):  
A. S. Yapsir ◽  
C.-H. Choi ◽  
S. N. Yang ◽  
T.-M. Lu ◽  
M. Madden ◽  
...  
Keyword(s):  
Single Crystal ◽  
Lattice Mismatch ◽  
X Ray Diffraction ◽  
Tem Analysis ◽  
Atom Ratio ◽  
Transmission Electron ◽  
Large Lattice ◽  
Large Lattice Mismatch ◽  
Partially Ionized ◽  
Acceleration Voltage

AbstractSingle crystal Al(111) films were grown on Si(111) surface at room temperature under a conventional vacuum condition using the partially ionized beam (PIB) deposition technique. The Al films were deposited with an ion to atom ratio of about 0.3% and an acceleration voltage of 1 kV. Transmission electron microscopy (TEM) analysis showed that the as-deposited films were single crystal with certain density of dislocation networks. These dislocations disappeared following a heat treatment at 450°C for 30 min. From X-ray diffraction and TEM patterns, it was observed that the Al(111) was aligned to the substrate with Al<1l0>//Si<1l0>. Possible mechanisms of the PIB epitaxial growth and a novel structural defect that is unique to this large lattice mismatch system are discussed.

Morphological Evolution in Highly Strained InSb/InAs(001)

2000 ◽  
Vol 618 ◽  
Author(s):  
Aruna Seshadri ◽  
J. Mirecki Millunchick
Keyword(s):  
Film Thickness ◽  
Lattice Mismatch ◽  
Morphological Evolution ◽  
Completely Continuous ◽  
Step Flow ◽  
Stages Of Growth ◽  
Large Lattice ◽  
Large Lattice Mismatch ◽  
Highly Strained

ABSTRACTWe investigated the morphological evolution of InSb grown on InAs (001) substrates (lattice mismatch = 6.9%) as a function of film thickness. Due to the very large lattice mismatch, growth proceeded via the Volmer-Weber mode. The morphological evolution of highly strained InSb films proceeds through several regimes as a function of thickness. The films initially nucleate isolated 3D islands even in the earliest stages of growth. The islands then coarsen and coalesce at slightly higher thicknesses, with some evidence of cooperative nucleation, or the sequential nucleation of islands and pits. Once the islands coalesce, the morphology evolves into long ridges aligned along the [110], however, those films are still discontinuous. At a thickness =100nm, the films finally become completely continuous and 2D growth proceeds via step flow of growth spirals present on the surface.

scholarly journals Enhanced luminescence/photodetecting bifunctional devices based on ZnO:Ga microwire/p-Si heterojunction by incorporating Ag nanowires

2021 ◽  
Author(s):  
Mingming Jiang ◽  
Yang Liu ◽  
Ruiming Dai ◽  
Kai Tang ◽  
Peng Wan ◽  
...  
Keyword(s):  
Band Gap ◽  
Carrier Mobility ◽  
Lattice Mismatch ◽  
Semiconductor Materials ◽  
Large Lattice ◽  
Ag Nanowires ◽  
Large Lattice Mismatch ◽  
Enhanced Luminescence ◽  
Indirect Band Gap

Suffering from the indirect band gap, low carrier mobility, and large lattice mismatch with other semiconductor materials, one of the current challenges in Si-based materials and structures is to prepare...

Epitaxial Growth of Copper, Silver and Gold on a Semiconducting Layered Material: Tungsten Disulfide

1987 ◽  
Vol 102 ◽  
Author(s):  
D. L. Doering ◽  
F. S. Ohuchi ◽  
W. Jaegermann ◽  
B. A. Parkinson
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Lattice Mismatch ◽  
Layered Material ◽  
Tungsten Disulfide ◽  
Layer By Layer ◽  
Metal Contacts ◽  
Layered Semiconductor ◽  
Large Lattice ◽  
Large Lattice Mismatch

ABSTRACTThe growth of copper, silver and gold thin films on tungsten disulfide has been examined as a model of metal contacts on a layered semiconductor. All three metals were found to grow epitaxially on the WS2. However, Cu appears to form a discontinuous film while Au and Ag grow layer by layer. Such epitaxial growth is somewhat surprising since there is a large lattice mismatch between the metals and the WS2.

III-V monolithic resonant photoreceiver using local epitaxy and large lattice mismatch material

1991 ◽  
Vol 4 (6) ◽  
pp. 217-219 ◽  
Author(s):  
S. Aboulhouda ◽  
J. P. Vilcot ◽  
M. Razeghi ◽  
D. Decoster ◽  
M. Francois ◽  
...  
Keyword(s):  
Lattice Mismatch ◽  
Large Lattice ◽  
Large Lattice Mismatch

Equilibrium Analysis of Lattice-Mismatched Nanowire Heterostructures

2002 ◽  
Vol 737 ◽  
Author(s):  
E. Ertekin ◽  
P.A. Greaney ◽  
T. D. Sands ◽  
D. C. Chrzan
Keyword(s):  
Simple Model ◽  
Misfit Dislocation ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Equilibrium Analysis ◽  
Misfit Dislocations ◽  
Model Based ◽  
Large Lattice ◽  
Large Lattice Mismatch

ABSTRACTThe quality of lattice-mismatched semiconductor heterojunctions is often limited by the presence of misfit dislocations. Nanowire geometries offer the promise of creating highly mismatched, yet dislocation free heterojunctions. A simple model, based upon the critical thickness model of Matthews and Blakeslee for misfit dislocation formation in planar heterostructures, illustrates that there exists a critical nanowire radius for which a coherent heterostructured nanowire system is unstable with respect to the formation of misfit dislocations. The model indicates that within the nanowire geometry, it should be possible to create perfect heterojunctions with large lattice-mismatch.

scholarly journals Epitaxial Growth of Germanium on Silicon for Light Emitters

2012 ◽  
Vol 2012 ◽  
pp. 1-8 ◽  
Author(s):  
Chengzhao Chen ◽  
Cheng Li ◽  
Shihao Huang ◽  
Yuanyu Zheng ◽  
Hongkai Lai ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Near Infrared ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Sige Layer ◽  
Infrared Light ◽  
Multiple Quantum ◽  
Light Emitters ◽  
Large Lattice ◽  
Large Lattice Mismatch

This paper describes the role of Ge as an enabler for light emitters on a Si platform. In spite of the large lattice mismatch of ~4.2% between Ge and Si, high-quality Ge layers can be epitaxially grown on Si by ultrahigh-vacuum chemical vapor deposition. Applications of the Ge layers to near-infrared light emitters with various structures are reviewed, including the tensile-strained Ge epilayer, the Ge epilayer with a delta-doping SiGe layer, and the Ge/SiGe multiple quantum wells on Si. The fundamentals of photoluminescence physics in the different Ge structures are discussed briefly.

Nucleation of misfit and threading dislocations in GaSb/GaAs(001) heterostructure

1996 ◽  
Vol 54 ◽  
pp. 946-947
Author(s):  
W. Qian ◽  
M. Skowronski ◽  
R. Kaspi ◽  
M. De Graef
Keyword(s):  
Lattice Mismatch ◽  
Strain Relaxation ◽  
Threading Dislocation ◽  
Threading Dislocations ◽  
Misfit Dislocations ◽  
Extended Defects ◽  
Large Lattice ◽  
Threading Dislocation Density ◽  
Small Lattice ◽  
Large Lattice Mismatch

GaSb thin film grown on GaAs is a promising substrate for fabrication of electronic and optical devices such as infrared photodetectors. However, these two materials exhibit a 7.8% lattice constant mismatch which raises concerns about the amount of extended defects introduced during strain relaxation. It was found that, unlike small lattice mismatched systems such as InxGa1-xAs/GaAs or GexSi1-x/Si(100), the GaSb/GaAs interface consists of a quasi-periodic array of 90° misfit dislocations, and the threading dislocation density is low despite its large lattice mismatch. This paper reports on the initial stages of GaSb growth on GaAs(001) substrates by molecular beam epitaxy (MBE). In particular, we discuss the possible formation mechanism of misfit dislocations at the GaSb/GaAs(001) interface and the origin of threading dislocations in the GaSb epilayer.GaSb thin films with nominal thicknesses of 5 to 100 nm were grown on GaAs(001) by MBE at a growth rate of about 0.8 monolayers per second.

Laser Processing, Characterization, and Modeling of Epitaxial Si/TiN/Si (100) Heterostructures

1992 ◽  
Vol 285 ◽  
Author(s):  
Rina Chowdhury ◽  
X. Chen ◽  
K. Jagannadham ◽  
J. Narayan
Keyword(s):  
Integrated Circuits ◽  
Lattice Mismatch ◽  
Three Dimensional ◽  
Epitaxial Relationship ◽  
Domain Matching Epitaxy ◽  
Large Lattice ◽  
Unit Cells ◽  
Potential Applications ◽  
Large Lattice Mismatch ◽  
Radiation Hard

ABSTRACTWe have successfully deposited multilayer Si/ITiN/Si(100) epitaxial heterostructures at a substrate temperature of 600°C in a chamber maintained at a vacuum of ∼10−7 torr using pulsed laser (KrF: λ = 248 nm, τ = 25 ns) deposition. This silicon-on-conductor device configuration has potential applications in three-dimensional integrated circuits and radiation hard devices.The two interfaces were quite sharp without any indication of interfacial reaction between them. The epitaxial relationship was found to be <100> Si II<100> TiN II<100> Si. In the plane, four unit cells of TiN matched with three unit cells of silicon with less than 4.0% misfit. This domain matching epitaxy provides the mechanism of epitaxial growth in systems with large lattice mismatch. Energetics and growth characteristics of such domain matching epitaxy in the high lattice mismatch Si/TiN/Si(100) system and possible device implications are discussed.

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