III-V monolithic resonant photoreceiver using local epitaxy and large lattice mismatch material

1991 ◽  
Vol 4 (6) ◽  
pp. 217-219 ◽  
Author(s):  
S. Aboulhouda ◽  
J. P. Vilcot ◽  
M. Razeghi ◽  
D. Decoster ◽  
M. Francois ◽  
...  
Keyword(s):  
Lattice Mismatch ◽  
Large Lattice ◽  
Large Lattice Mismatch

scholarly journals Enhanced luminescence/photodetecting bifunctional devices based on ZnO:Ga microwire/p-Si heterojunction by incorporating Ag nanowires

2021 ◽  
Author(s):  
Mingming Jiang ◽  
Yang Liu ◽  
Ruiming Dai ◽  
Kai Tang ◽  
Peng Wan ◽  
...  
Keyword(s):  
Band Gap ◽  
Carrier Mobility ◽  
Lattice Mismatch ◽  
Semiconductor Materials ◽  
Large Lattice ◽  
Ag Nanowires ◽  
Large Lattice Mismatch ◽  
Enhanced Luminescence ◽  
Indirect Band Gap

Suffering from the indirect band gap, low carrier mobility, and large lattice mismatch with other semiconductor materials, one of the current challenges in Si-based materials and structures is to prepare...

Epitaxial Growth of Copper, Silver and Gold on a Semiconducting Layered Material: Tungsten Disulfide

1987 ◽  
Vol 102 ◽  
Author(s):  
D. L. Doering ◽  
F. S. Ohuchi ◽  
W. Jaegermann ◽  
B. A. Parkinson
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Lattice Mismatch ◽  
Layered Material ◽  
Tungsten Disulfide ◽  
Layer By Layer ◽  
Metal Contacts ◽  
Layered Semiconductor ◽  
Large Lattice ◽  
Large Lattice Mismatch

ABSTRACTThe growth of copper, silver and gold thin films on tungsten disulfide has been examined as a model of metal contacts on a layered semiconductor. All three metals were found to grow epitaxially on the WS2. However, Cu appears to form a discontinuous film while Au and Ag grow layer by layer. Such epitaxial growth is somewhat surprising since there is a large lattice mismatch between the metals and the WS2.

Equilibrium Analysis of Lattice-Mismatched Nanowire Heterostructures

2002 ◽  
Vol 737 ◽  
Author(s):  
E. Ertekin ◽  
P.A. Greaney ◽  
T. D. Sands ◽  
D. C. Chrzan
Keyword(s):  
Simple Model ◽  
Misfit Dislocation ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Equilibrium Analysis ◽  
Misfit Dislocations ◽  
Model Based ◽  
Large Lattice ◽  
Large Lattice Mismatch

ABSTRACTThe quality of lattice-mismatched semiconductor heterojunctions is often limited by the presence of misfit dislocations. Nanowire geometries offer the promise of creating highly mismatched, yet dislocation free heterojunctions. A simple model, based upon the critical thickness model of Matthews and Blakeslee for misfit dislocation formation in planar heterostructures, illustrates that there exists a critical nanowire radius for which a coherent heterostructured nanowire system is unstable with respect to the formation of misfit dislocations. The model indicates that within the nanowire geometry, it should be possible to create perfect heterojunctions with large lattice-mismatch.

scholarly journals Epitaxial Growth of Germanium on Silicon for Light Emitters

2012 ◽  
Vol 2012 ◽  
pp. 1-8 ◽  
Author(s):  
Chengzhao Chen ◽  
Cheng Li ◽  
Shihao Huang ◽  
Yuanyu Zheng ◽  
Hongkai Lai ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Near Infrared ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Sige Layer ◽  
Infrared Light ◽  
Multiple Quantum ◽  
Light Emitters ◽  
Large Lattice ◽  
Large Lattice Mismatch

This paper describes the role of Ge as an enabler for light emitters on a Si platform. In spite of the large lattice mismatch of ~4.2% between Ge and Si, high-quality Ge layers can be epitaxially grown on Si by ultrahigh-vacuum chemical vapor deposition. Applications of the Ge layers to near-infrared light emitters with various structures are reviewed, including the tensile-strained Ge epilayer, the Ge epilayer with a delta-doping SiGe layer, and the Ge/SiGe multiple quantum wells on Si. The fundamentals of photoluminescence physics in the different Ge structures are discussed briefly.

Nucleation of misfit and threading dislocations in GaSb/GaAs(001) heterostructure

1996 ◽  
Vol 54 ◽  
pp. 946-947
Author(s):  
W. Qian ◽  
M. Skowronski ◽  
R. Kaspi ◽  
M. De Graef
Keyword(s):  
Lattice Mismatch ◽  
Strain Relaxation ◽  
Threading Dislocation ◽  
Threading Dislocations ◽  
Misfit Dislocations ◽  
Extended Defects ◽  
Large Lattice ◽  
Threading Dislocation Density ◽  
Small Lattice ◽  
Large Lattice Mismatch

GaSb thin film grown on GaAs is a promising substrate for fabrication of electronic and optical devices such as infrared photodetectors. However, these two materials exhibit a 7.8% lattice constant mismatch which raises concerns about the amount of extended defects introduced during strain relaxation. It was found that, unlike small lattice mismatched systems such as InxGa1-xAs/GaAs or GexSi1-x/Si(100), the GaSb/GaAs interface consists of a quasi-periodic array of 90° misfit dislocations, and the threading dislocation density is low despite its large lattice mismatch. This paper reports on the initial stages of GaSb growth on GaAs(001) substrates by molecular beam epitaxy (MBE). In particular, we discuss the possible formation mechanism of misfit dislocations at the GaSb/GaAs(001) interface and the origin of threading dislocations in the GaSb epilayer.GaSb thin films with nominal thicknesses of 5 to 100 nm were grown on GaAs(001) by MBE at a growth rate of about 0.8 monolayers per second.

Laser Processing, Characterization, and Modeling of Epitaxial Si/TiN/Si (100) Heterostructures

1992 ◽  
Vol 285 ◽  
Author(s):  
Rina Chowdhury ◽  
X. Chen ◽  
K. Jagannadham ◽  
J. Narayan
Keyword(s):  
Integrated Circuits ◽  
Lattice Mismatch ◽  
Three Dimensional ◽  
Epitaxial Relationship ◽  
Domain Matching Epitaxy ◽  
Large Lattice ◽  
Unit Cells ◽  
Potential Applications ◽  
Large Lattice Mismatch ◽  
Radiation Hard

ABSTRACTWe have successfully deposited multilayer Si/ITiN/Si(100) epitaxial heterostructures at a substrate temperature of 600°C in a chamber maintained at a vacuum of ∼10−7 torr using pulsed laser (KrF: λ = 248 nm, τ = 25 ns) deposition. This silicon-on-conductor device configuration has potential applications in three-dimensional integrated circuits and radiation hard devices.The two interfaces were quite sharp without any indication of interfacial reaction between them. The epitaxial relationship was found to be <100> Si II<100> TiN II<100> Si. In the plane, four unit cells of TiN matched with three unit cells of silicon with less than 4.0% misfit. This domain matching epitaxy provides the mechanism of epitaxial growth in systems with large lattice mismatch. Energetics and growth characteristics of such domain matching epitaxy in the high lattice mismatch Si/TiN/Si(100) system and possible device implications are discussed.

Observation of Surfactant Properties of Thallium in the Epitaxial Growth of Indium Arsenide on Gallium Arsenide

1999 ◽  
Vol 570 ◽  
Author(s):  
D.F. Storm ◽  
M.D. Lange
Keyword(s):  
Gallium Arsenide ◽  
Electronic Properties ◽  
Epitaxial Growth ◽  
Indium Arsenide ◽  
Lattice Mismatch ◽  
Layer By Layer ◽  
Surfactant Properties ◽  
Large Lattice ◽  
Layer Mode ◽  
Large Lattice Mismatch

ABSTRACTBecause of the large lattice mismatch between InAs and GaAs, the growth of the former on the (001) surface of the latter undergoes a well-known transition from a layer-by-layer mode to an island mode at an equivalent coverage of 1–2 monolayers (ML). We have observed a suppression of this transition when growth proceeds under a simultaneous thallium flux. The thallium is not significantly incorporated into the InAs layer; however, approximately I ML may remain at the interface. The effect of the thallium on the electronic properties of the InAs is investigated.

Highly Mismatched Hetero-Epitaxial Growth of Cubic Sic on Si

1987 ◽  
Vol 97 ◽  
Author(s):  
Hiroyuki Matsunami
Keyword(s):  
Epitaxial Growth ◽  
Lattice Mismatch ◽  
Electronic Devices ◽  
Chemical Vapor ◽  
Buffer Layers ◽  
Optimum Conditions ◽  
Large Lattice ◽  
Impurity Doping ◽  
Large Lattice Mismatch

ABSTRACTSingle crystals of cubic SiC were hetero-epitaxially grown on Si by chemical vapor deposition (CVD) method. A carbonized buffer layer on Si is utilized to overcome the large lattice mismatch of 20 %. Optimum conditions to make the buffer layers and those structures are discussed. Crystal quality of the CVD grown cubic SiC is analyzed by using X-ray analyses and microscopic observations. Electrical properties controlled by impurity doping during epitaxial growth are described together with fundamental electronic devices.

Growth and properties of epitaxial PbSe on Si(111) and Si(100) without buffer layer

1995 ◽  
Vol 379 ◽  
Author(s):  
P. Müller ◽  
A.N. Tiwari ◽  
H. Zogg
Keyword(s):  
Buffer Layer ◽  
Lattice Mismatch ◽  
Infrared Detector ◽  
Device Fabrication ◽  
Buffer Layers ◽  
Silicon Substrates ◽  
High Quality ◽  
Si Substrates ◽  
Large Lattice ◽  
Large Lattice Mismatch

Narrow gap IV-VI materials like PbS, PbSnSe and PbSnTe are used for infrared detector device fabrication [1,2]. Earlier an intermediate Ila-fluoride buffer layer, which consisted of a BaF2/CaF2-stack of about 2000 Å thickness, was used to get epitaxial high quality layers on silicon substrates. This buffer is now reduced to a much thinner layer of only about 20 Å thick CaF2, regardless the large lattice mismatch between layer and substrate [3,4,5]. The question therefore arises if high quality IV-VI layers can be grown on Si-substrates without any buffer layer as e.g. in CdTe/Si or GaAs/Si systems.The aim of this work is to grow IV-VI layers directly on Si-substrates without any buffer layers to study the growth kinetics and epitaxial quality. PbSe was chosen as a representant of IV-VI materials, and layers were grown on (111)- and (100)-oriented silicon substrates.

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