Raman and Secondary Ion Mass Spectroscopy of Epitaxial CdTe/InSb Interfaces Grown by Low-Energy Bias Sputtering

1990 ◽  
Vol 216 ◽  
Author(s):  
Suhit R. Das ◽  
David J. Lockwood ◽  
Stephen J. Rolfe ◽  
John P. McCaffrey ◽  
John G. Cook
Keyword(s):  
Raman Spectroscopy ◽  
Single Crystal ◽  
Mass Spectroscopy ◽  
Growth Kinetics ◽  
Film Deposition ◽  
Low Energy ◽  
Growth Surface ◽  
Secondary Ion Mass Spectroscopy ◽  
Secondary Ion

ABSTRACTHeteroepitaxial (100)CdTe || (100)InSb structures have been fabricated by growing CdTe epilayers, at growth temperatures below 200°C, on single crystal InSb substrates by low-energy bias sputtering. Controlled low-energy ion bombardment at the substrate was employed to clean the growth surface in-situ just prior to film deposition and to modify the growth kinetics and enhance adatom mobility during deposition. Raman spectroscopy of the interface revealed no evidence of In2Te3 and secondary ion mass spectroscopy showed the interface to be chemically abrupt.

scholarly journals Properties of Nickel Films Prepared by R.F. Sputtering and Interdiffusion Analysis of Ta2N–Ni Films

1980 ◽  
Vol 7 (1-3) ◽  
pp. 159-162 ◽  
Author(s):  
S. Abdin ◽  
A. Huber ◽  
G. Morillot ◽  
C. Val
Keyword(s):  
Contact Resistance ◽  
Mass Spectroscopy ◽  
Elevated Temperatures ◽  
Film Deposition ◽  
Secondary Ion Mass Spectroscopy ◽  
Nickel Films ◽  
Secondary Ion

Ni film deposition by r.f. sputtering and etching conditions have been investigated. The contact resistance and adhesion of this Ni layer deposited directly onto Ta2N films have also been studied in air and at elevated temperatures. In this combination, the Ta2N/Ni interdiffusion analysis was carried out by the Secondary Ion Mass Spectroscopy (SIMS).

Analysis of low-energy boron implants in silicon

1985 ◽  
Vol 63 (6) ◽  
pp. 890-893 ◽  
Author(s):  
M. Simard-Normandin ◽  
C. Slaby
Keyword(s):  
Sheet Resistance ◽  
Mass Spectroscopy ◽  
Measurement Techniques ◽  
Low Energy ◽  
Resistance Measurement ◽  
Concentration Profiles ◽  
Secondary Ion Mass Spectroscopy ◽  
Sheet Resistance Measurement ◽  
Secondary Ion

Low-energy boron implants in silicon are analyzed using secondary-ion mass spectroscopy and standard junction and sheet-resistance measurement techniques. Implantation of 11B+ is compared with that of [Formula: see text]. The concentration profiles are compared with Linhard–Scharf–Schiott theory and improved range parameters are obtained.

Revealing surface oxidation on the organic semi-conducting single crystal rubrene with time of flight secondary ion mass spectroscopy

2013 ◽  
Vol 15 (14) ◽  
pp. 5202 ◽  
Author(s):  
Robert J. Thompson ◽  
Sarah Fearn ◽  
Ke Jie Tan ◽  
Hans George Cramer ◽  
Christian L. Kloc ◽  
...  
Keyword(s):  
Single Crystal ◽  
Mass Spectroscopy ◽  
Time Of Flight ◽  
Surface Oxidation ◽  
Secondary Ion Mass Spectroscopy ◽  
Secondary Ion

scholarly journals Channels of oxygen diffusion in single crystal rubrene revealed

2016 ◽  
Vol 18 (47) ◽  
pp. 32302-32307 ◽  
Author(s):  
Robert J. Thompson ◽  
Thomas Bennett ◽  
Sarah Fearn ◽  
Muhammad Kamaludin ◽  
Christian Kloc ◽  
...  
Keyword(s):  
Single Crystal ◽  
Mass Spectroscopy ◽  
Organic Semiconductor ◽  
Oxygen Diffusion ◽  
Time Of Flight ◽  
Secondary Ion Mass Spectroscopy ◽  
Secondary Ion

Oxygen diffusion channels are imaged in the single crystal organic semiconductor rubrene using Time of Flight Secondary Ion Mass Spectroscopy.

Effect of Point Defect Injection on B diffusion in C containing Si and SiGe

2004 ◽  
Vol 809 ◽  
Author(s):  
Mudith S. A. Karunaratne ◽  
Janet M. Bonar ◽  
Jing Zhang ◽  
Arthur F. W. Willoughby
Keyword(s):  
Computer Simulation ◽  
Point Defect ◽  
Mass Spectroscopy ◽  
Diffusion Coefficients ◽  
Secondary Ion Mass Spectroscopy ◽  
Annealing Conditions ◽  
Defect Injection ◽  
Before And After ◽  
Secondary Ion

ABSTRACTIn this paper, we compare B diffusion in epitaxial Si, Si with 0.1%C, SiGe with 11% Ge and SiGe:C with 11%Ge and 0.1%C at 1000°C under interstitial, vacancy and non-injection annealing conditions. Diffusion coefficients of B in each material were extracted by computer simulation, using secondary ion mass spectroscopy (SIMS) profiles obtained from samples before and after annealing.Interstitial injection enhances B diffusion considerably in all materials compared to inert annealing. In samples which experienced vacancy injection, B diffusion was suppressed. The results are consistent with the view that B diffusion in these materials occurs primarily via interstitialcy type defects.

Sign in / Sign up

Export Citation Format

Share Document