Self-compensation in ZnO thin films: An insight from X-ray photoelectron spectroscopy, Raman spectroscopy and time-of-flight secondary ion mass spectroscopy analyses

2007 ◽  
Vol 515 (5) ◽  
pp. 2879-2884 ◽  
Author(s):  
K.G. Saw ◽  
K. Ibrahim ◽  
Y.T. Lim ◽  
M.K. Chai
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Mass Spectroscopy ◽  
Photoelectron Spectroscopy ◽  
Time Of Flight ◽  
Zno Thin Films ◽  
Secondary Ion Mass Spectroscopy ◽  
X Ray ◽  
Secondary Ion

scholarly journals Phosphorus Behavior in Heavily Phosphorus-Doped Silicon Surfaces due to Annealing. X-Ray Photoelectron Spectroscopy and Secondary Ion Mass Spectroscopy.

Shinku ◽  
1995 ◽  
Vol 38 (3) ◽  
pp. 295-298 ◽  
Author(s):  
Wen Biao YING ◽  
Yusuke MIZOKAWA ◽  
Yoshitomo KAMIURA ◽  
Yong Bing YU ◽  
Masafumi NISHIMATSU ◽  
...  
Keyword(s):  
Mass Spectroscopy ◽  
Photoelectron Spectroscopy ◽  
Silicon Surfaces ◽  
Secondary Ion Mass Spectroscopy ◽  
X Ray ◽  
Doped Silicon ◽  
Phosphorus Doped ◽  
Secondary Ion
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