Impurity-characterization agreement in type-IIb single-crystal diamond by high-temperature Hall-effect, capacitance-voltage, and secondary-ion mass-spectroscopy measurements

1994 ◽  
Vol 49 (8) ◽  
pp. 5745-5748 ◽  
Author(s):  
H. A. Wynands ◽  
D. M. Malta ◽  
B. A. Fox ◽  
J. A. von Windheim ◽  
J. P. Fleurial ◽  
...  
Keyword(s):  
High Temperature ◽  
Single Crystal ◽  
Hall Effect ◽  
Mass Spectroscopy ◽  
Secondary Ion Mass Spectroscopy ◽  
Single Crystal Diamond ◽  
Capacitance Voltage ◽  
Secondary Ion

Revealing surface oxidation on the organic semi-conducting single crystal rubrene with time of flight secondary ion mass spectroscopy

2013 ◽  
Vol 15 (14) ◽  
pp. 5202 ◽  
Author(s):  
Robert J. Thompson ◽  
Sarah Fearn ◽  
Ke Jie Tan ◽  
Hans George Cramer ◽  
Christian L. Kloc ◽  
...  
Keyword(s):  
Single Crystal ◽  
Mass Spectroscopy ◽  
Time Of Flight ◽  
Surface Oxidation ◽  
Secondary Ion Mass Spectroscopy ◽  
Secondary Ion

Comparison of Oxygen and Hydrogen Gettering at High-Temperature Post-Implantation Annealing of Hydrogen and Helium Implanted Czochralski Silicon

1998 ◽  
Vol 510 ◽  
Author(s):  
R. Job ◽  
W. R. Fahrner ◽  
A. I. Ivanov ◽  
L. Palmetshofer ◽  
A. G Ulyashin
Keyword(s):  
High Temperature ◽  
Mass Spectroscopy ◽  
Heat Treatments ◽  
Secondary Ion Mass Spectroscopy ◽  
Spreading Resistance ◽  
Czochralski Silicon ◽  
Implantation Damage ◽  
P Type ◽  
Secondary Ion ◽  
Post Implantation

AbstractP-type Czochralski (Cz) Si was implanted with H (180 keV, 2.7.1016 cm−2) or He (300 keV, 1.1016 cm−2) ions. The gettering of O and H atoms by the buried implantation damage layers during annealing up to 4 hours (1000°C in H2 or N2 ambient) was studied by secondary ion mass spectroscopy (SIMS) and spreading resistance probe (SRP) measurements. Buried defect layers act as good getter centers for O and H atoms at appropriate heat treatments. The enhanced gettering of O atoms in H implanted Cz Si (as compared to the gettering of O in He implanted samples) as well as the enhanced gettering of O during annealing in H2 flow (as compared to N2 ambient) can be explained by a hydrogen enhanced O diffusion towards the defect layers. According to a strong accumulation of O at the buried damage layers and near the surface some anomalies of the SRP profiles can be observed after post-implantation annealing.

scholarly journals Channels of oxygen diffusion in single crystal rubrene revealed

2016 ◽  
Vol 18 (47) ◽  
pp. 32302-32307 ◽  
Author(s):  
Robert J. Thompson ◽  
Thomas Bennett ◽  
Sarah Fearn ◽  
Muhammad Kamaludin ◽  
Christian Kloc ◽  
...  
Keyword(s):  
Single Crystal ◽  
Mass Spectroscopy ◽  
Organic Semiconductor ◽  
Oxygen Diffusion ◽  
Time Of Flight ◽  
Secondary Ion Mass Spectroscopy ◽  
Secondary Ion

Oxygen diffusion channels are imaged in the single crystal organic semiconductor rubrene using Time of Flight Secondary Ion Mass Spectroscopy.

Raman and Secondary Ion Mass Spectroscopy of Epitaxial CdTe/InSb Interfaces Grown by Low-Energy Bias Sputtering

1990 ◽  
Vol 216 ◽  
Author(s):  
Suhit R. Das ◽  
David J. Lockwood ◽  
Stephen J. Rolfe ◽  
John P. McCaffrey ◽  
John G. Cook
Keyword(s):  
Raman Spectroscopy ◽  
Single Crystal ◽  
Mass Spectroscopy ◽  
Growth Kinetics ◽  
Film Deposition ◽  
Low Energy ◽  
Growth Surface ◽  
Secondary Ion Mass Spectroscopy ◽  
Secondary Ion

ABSTRACTHeteroepitaxial (100)CdTe || (100)InSb structures have been fabricated by growing CdTe epilayers, at growth temperatures below 200°C, on single crystal InSb substrates by low-energy bias sputtering. Controlled low-energy ion bombardment at the substrate was employed to clean the growth surface in-situ just prior to film deposition and to modify the growth kinetics and enhance adatom mobility during deposition. Raman spectroscopy of the interface revealed no evidence of In2Te3 and secondary ion mass spectroscopy showed the interface to be chemically abrupt.

A comparison of the Hall-effect and secondary ion mass spectroscopy on the shallow oxygen donor in unintentionally doped GaN films

2000 ◽  
Vol 88 (4) ◽  
pp. 1811-1817 ◽  
Author(s):  
D. Meister ◽  
M. Böhm ◽  
M. Topf ◽  
W. Kriegseis ◽  
W. Burkhardt ◽  
...  
Keyword(s):  
Hall Effect ◽  
Mass Spectroscopy ◽  
Secondary Ion Mass Spectroscopy ◽  
Oxygen Donor ◽  
Secondary Ion

Effect of Point Defect Injection on B diffusion in C containing Si and SiGe

2004 ◽  
Vol 809 ◽  
Author(s):  
Mudith S. A. Karunaratne ◽  
Janet M. Bonar ◽  
Jing Zhang ◽  
Arthur F. W. Willoughby
Keyword(s):  
Computer Simulation ◽  
Point Defect ◽  
Mass Spectroscopy ◽  
Diffusion Coefficients ◽  
Secondary Ion Mass Spectroscopy ◽  
Annealing Conditions ◽  
Defect Injection ◽  
Before And After ◽  
Secondary Ion

ABSTRACTIn this paper, we compare B diffusion in epitaxial Si, Si with 0.1%C, SiGe with 11% Ge and SiGe:C with 11%Ge and 0.1%C at 1000°C under interstitial, vacancy and non-injection annealing conditions. Diffusion coefficients of B in each material were extracted by computer simulation, using secondary ion mass spectroscopy (SIMS) profiles obtained from samples before and after annealing.Interstitial injection enhances B diffusion considerably in all materials compared to inert annealing. In samples which experienced vacancy injection, B diffusion was suppressed. The results are consistent with the view that B diffusion in these materials occurs primarily via interstitialcy type defects.

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