Hyperfine and Superhyperfine Tensors as Probes of the Local Environment of Deep-Level Defect Centers

1990 ◽  
Vol 209 ◽  
Author(s):  
Michael Cook ◽  
C.T. White
Keyword(s):  
Point Defects ◽  
Deep Level ◽  
Local Environment ◽  
Solid Material ◽  
Crystalline Lattice ◽  
Deep Level Defect ◽  
Defect Centers ◽  
Amorphous Network

Point defects occur in every solid material. No crystalline lattice is perfect, and no amorphous network has only unbroken sequences of bonds. Every material contains a greater or smaller number of vacancies, interstitials, substitutional atoms, and broken bonds. Many of these have only minor effects on the behavior of the material, but in a surprisingly large number of cases, point defects can have significant and even decisive effects on material performance. This can be true even when the defects are present in very small concentrations.

Persistent Photoconductivity in n-Type GaN

1996 ◽  
Vol 449 ◽  
Author(s):  
A. E. Wickenden ◽  
G. Beadie ◽  
D. D. Koleske ◽  
W. S. Rabinovich ◽  
J. A. Freitas
Keyword(s):  
Room Temperature ◽  
Deep Level ◽  
Persistent Photoconductivity ◽  
Acceptor Pair ◽  
Deep Level Defect ◽  
Sapphire Substrates ◽  
Defect Centers ◽  
Donor Acceptor ◽  
Si Doped ◽  
Donor Acceptor Pair

ABSTRACTPersistent photoconductivity has been observed in n-type Si-doped GaN grown on sapphire substrates by metalorganic vapor phase epitaxy. The effect has been seen both in films which are of electrically high quality, based on low temperature photoluminescence (PL) and Hall analysis, and in films which either appear to be compensated or which exhibit strong donor-acceptor pair recombination. The photoconductivity has been observed to persist for several days at room temperature (300K). Modeling of the resistance recovery by a stretched exponential treatment may suggest a distribution of deep level defect centers in the Si-doped GaN films.

The Peculiarities of Deep Level Defect Passivation in SI by Atomic Hydrogen

1989 ◽  
Vol 6-7 ◽  
pp. 341-342
Author(s):  
Sergei V. Koveshnikov ◽  
S.V. Nosenko ◽  
Eugene B. Yakimov
Keyword(s):  
Atomic Hydrogen ◽  
Deep Level ◽  
Deep Level Defect ◽  
Defect Passivation

Study of Deep Level Defect in Polycrystalline Cadmium Sulfide Films

1998 ◽  
pp. 255-261
Author(s):  
U. Pal ◽  
R. Silva González ◽  
F. Donado ◽  
M. L. Hernández ◽  
J. M. Gracia-Jiménez
Keyword(s):  
Cadmium Sulfide ◽  
Deep Level ◽  
Deep Level Defect

Characterization of traps in InAlN by optically and thermally stimulated deep level defect spectroscopies

2018 ◽  
Vol 124 (14) ◽  
pp. 145703 ◽  
Author(s):  
Esmat Farzana ◽  
Humberto M. Foronda ◽  
Christine M. Jackson ◽  
Towhidur Razzak ◽  
Zeng Zhang ◽  
...  
Keyword(s):  
Deep Level ◽  
Deep Level Defect

Point Defects in 4H-SiC Epilayers Introduced by 4.5 MeV Electron Irradiation and their Effect on Power JBS SiC Diode Characteristics

2013 ◽  
Vol 205-206 ◽  
pp. 451-456 ◽  
Author(s):  
Pavel Hazdra ◽  
Vít Záhlava ◽  
Jan Vobecký
Keyword(s):  
Electron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Radiation Defects ◽  
Electrical Parameters ◽  
Power Diodes ◽  
Defect Centers ◽  
Measurement Results ◽  
Transient Spectroscopy ◽  
State Resistance

Electronic properties of radiation damage produced in 4H-SiC by electron irradiation and its effect on electrical parameters of Junction Barrier Schottky (JBS) diodes were investigated. 4H‑SiC N‑epilayers, which formed the low‑doped N-base of JBS power diodes, were irradiated with 4.5 MeV electrons with fluences ranging from 1.5x1014 to 5x1015 cm-2. Radiation defects were then characterized by capacitance deep-level transient spectroscopy and C-V measurement. Results show that electron irradiation introduces two defect centers giving rise to acceptor levels at EC‑0.39 and EC‑0.60 eV. Introduction rate of these centers is 0.24 and 0.65 cm‑1, respectively. These radiation defects have a negligible effect on blocking and dynamic characteristics of irradiated diodes, however, the acceptor character of introduced deep levels and their high introduction rates deteriorate diode’s ON-state resistance already at fluences higher than 1x1015 cm‑2.

scholarly journals Perspectives on deterministic control of quantum point defects by scanned probes

Nanophotonics ◽  
2019 ◽  
Vol 8 (11) ◽  
pp. 2033-2040 ◽  
Author(s):  
Donghun Lee ◽  
Jay A. Gupta
Keyword(s):  
Point Defects ◽  
High Performance ◽  
Information Science ◽  
Hexagonal Boron Nitride ◽  
Local Environment ◽  
Individual Point ◽  
Scanned Probe Microscopy ◽  
Deterministic Control ◽  
Quantum Point ◽  
Scanned Probes

AbstractControl over individual point defects in solid-state systems is becoming increasingly important, not only for current semiconductor industries but also for next generation quantum information science and technologies. To realize the potential of these defects for scalable and high-performance quantum applications, precise placement of defects and defect clusters at the nanoscale is required, along with improved control over the nanoscale local environment to minimize decoherence. These requirements are met using scanned probe microscopy in silicon and III-V semiconductors, which suggests the extension to hosts for quantum point defects such as diamond, silicon carbide, and hexagonal boron nitride is feasible. Here we provide a perspective on the principal challenges toward this end, and new opportunities afforded by the integration of scanned probes with optical and magnetic resonance techniques.

Deep level defect luminescence in cadmium selenide nano-crystals films

2005 ◽  
Vol 280 (3-4) ◽  
pp. 502-508 ◽  
Author(s):  
V. Babentsov ◽  
J. Riegler ◽  
J. Schneider ◽  
O. Ehlert ◽  
T. Nann ◽  
...  
Keyword(s):  
Cadmium Selenide ◽  
Deep Level ◽  
Deep Level Defect ◽  
Defect Luminescence

The Peculiarities of Deep Level Defect Passivation in Si by Atomic Hydrogen

1990 ◽  
Vol 120 (2) ◽  
pp. 391-395 ◽  
Author(s):  
S. V. Koveshnikov ◽  
S. V. Nosenko ◽  
E. B. Yakimov
Keyword(s):  
Atomic Hydrogen ◽  
Deep Level ◽  
Deep Level Defect ◽  
Defect Passivation
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