Laplace-transform deep-level spectroscopy: The technique and its applications to the study of point defects in semiconductors

2004 ◽  
Vol 96 (9) ◽  
pp. 4689-4728 ◽  
Author(s):  
L. Dobaczewski ◽  
A. R. Peaker ◽  
K. Bonde Nielsen
Keyword(s):  
Laplace Transform ◽  
Point Defects ◽  
Deep Level ◽  
Defects In Semiconductors

Laplace transform deep‐level transient spectroscopic studies of defects in semiconductors

1994 ◽  
Vol 76 (1) ◽  
pp. 194-198 ◽  
Author(s):  
L. Dobaczewski ◽  
P. Kaczor ◽  
I. D. Hawkins ◽  
A. R. Peaker
Keyword(s):  
Laplace Transform ◽  
Deep Level ◽  
Spectroscopic Studies ◽  
Defects In Semiconductors

scholarly journals Convergence of supercell calculations for point defects in semiconductors: Vacancy in silicon

1998 ◽  
Vol 58 (3) ◽  
pp. 1318-1325 ◽  
Author(s):  
M. J. Puska ◽  
S. Pöykkö ◽  
M. Pesola ◽  
R. M. Nieminen
Keyword(s):  
Point Defects ◽  
Defects In Semiconductors

Hyperfine and Superhyperfine Tensors as Probes of the Local Environment of Deep-Level Defect Centers

1990 ◽  
Vol 209 ◽  
Author(s):  
Michael Cook ◽  
C.T. White
Keyword(s):  
Point Defects ◽  
Deep Level ◽  
Local Environment ◽  
Solid Material ◽  
Crystalline Lattice ◽  
Deep Level Defect ◽  
Defect Centers ◽  
Amorphous Network

Point defects occur in every solid material. No crystalline lattice is perfect, and no amorphous network has only unbroken sequences of bonds. Every material contains a greater or smaller number of vacancies, interstitials, substitutional atoms, and broken bonds. Many of these have only minor effects on the behavior of the material, but in a surprisingly large number of cases, point defects can have significant and even decisive effects on material performance. This can be true even when the defects are present in very small concentrations.

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