Characterization of traps in InAlN by optically and thermally stimulated deep level defect spectroscopies

2018 ◽  
Vol 124 (14) ◽  
pp. 145703 ◽  
Author(s):  
Esmat Farzana ◽  
Humberto M. Foronda ◽  
Christine M. Jackson ◽  
Towhidur Razzak ◽  
Zeng Zhang ◽  
...  
Keyword(s):  
Deep Level ◽  
Deep Level Defect

Deep Level Defect Characterization of MBE Grown Ingaas/Gaas Heterostructures.

1990 ◽  
Vol 209 ◽  
Author(s):  
W.R. Buchwald ◽  
J.H. Zhao ◽  
F.C. Rong
Keyword(s):  
Conduction Band ◽  
Cross Sections ◽  
Deep Level ◽  
Schottky Diodes ◽  
Energy Levels ◽  
Depth Profiling ◽  
Defect Characterization ◽  
Deep Level Defect ◽  
Transient Spectroscopy

ABSTRACTDeep level transient spectroscopy (DLTS) measurements have been performed on Schottky diodes fabricated on MBE grown InGaAs/GaAs heterostructures. The dominant electron trap in this material is found at a depth of 0.30eV below the GaAs conduction band and is believed to be the previously observed M3 defect. Two other defects, at depths of 0.50eV and 0.58eV below the GaAs conduction band, were also observed. Defect depth profiling shows the 0.50eV defect to be spatially locatednear the heterointerface. The 0.58eV defect is not observed near the heterointerface but is observed in large concentrations deep in the GaAs epilayer. Optical DLTS measurements reveal deep defects at 0.54eV and 0.31eV above the InGaAs valence band as well as a large, broad peak, most likely consisting of several energy levels with varying capture cross sections,located at the heterointerface. Two carrier accumulation peaks were also seen in the CV carrier profiling measurements and are suggested to be due to two heterointerface defects located at 0.68eV and 0.87eV below the GaAs conduction band.Thermally stimulated capacitance measurements also indicate minority hole emission in this n-InGaAs/N-GaAs heterostructure.

Growth of GaN without Yellow Luminescence

1995 ◽  
Vol 395 ◽  
Author(s):  
X. Zhang ◽  
P. Kung ◽  
D. Walker ◽  
A. Saxler ◽  
M. Razeghi
Keyword(s):  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Deep Level ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Native Defect ◽  
Yellow Luminescence ◽  
Gallium Vacancy ◽  
Rich Condition

ABSTRACTWe report the growth and photoluminescence characterization of GaN grown on different substrates and under different growth conditions using metalorganic chemical vapor deposition. The deep-level yellow luminescence centered at around 2.2eV is attributed to native defect, most possibly the gallium vacancy. The yellow luminescence can be substantially reduced By growing GaN under Ga-rich condition or doping GaN with Ge or Mg.

The Peculiarities of Deep Level Defect Passivation in SI by Atomic Hydrogen

1989 ◽  
Vol 6-7 ◽  
pp. 341-342
Author(s):  
Sergei V. Koveshnikov ◽  
S.V. Nosenko ◽  
Eugene B. Yakimov
Keyword(s):  
Atomic Hydrogen ◽  
Deep Level ◽  
Deep Level Defect ◽  
Defect Passivation

Deep level transient spectroscopy characterization of InAs self-assembled quantum dots

2001 ◽  
Vol 89 (2) ◽  
pp. 1172-1174 ◽  
Author(s):  
V. V. Ilchenko ◽  
S. D. Lin ◽  
C. P. Lee ◽  
O. V. Tretyak
Keyword(s):  
Quantum Dots ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Self Assembled ◽  
Transient Spectroscopy

Study of Deep Level Defect in Polycrystalline Cadmium Sulfide Films

1998 ◽  
pp. 255-261
Author(s):  
U. Pal ◽  
R. Silva González ◽  
F. Donado ◽  
M. L. Hernández ◽  
J. M. Gracia-Jiménez
Keyword(s):  
Cadmium Sulfide ◽  
Deep Level ◽  
Deep Level Defect

Characterization of electrically active deep level defects in 4H and 6H SiC

1997 ◽  
Vol 6 (10) ◽  
pp. 1388-1391 ◽  
Author(s):  
J.P. Doyle ◽  
M.O. Aboelfotoh ◽  
B.G. Svensson ◽  
A. Schöner ◽  
N. Nordell
Keyword(s):  
Deep Level
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