Influence of Current Injection into a-Sin:H Films on Charge Trapping Defects

1990 ◽  
Vol 209 ◽  
Author(s):  
Tomoki Oku ◽  
Kiyoshi Kawabata ◽  
Yukio Higaki ◽  
Teruhito Matsui ◽  
Hirozo Takano ◽  
...  
Keyword(s):  
Valence Band ◽  
Cross Section ◽  
Degradation Mechanism ◽  
Charge Trapping ◽  
Current Injection ◽  
Band Tail ◽  
Hole Trapping ◽  
Trapping Centers

ABSTRACTThe degradation mechanism of a-SiN:H films under current injection is investigated. It is shown that the degradation of a-SiN:H films is closely related to the hole trapping into Si-Si, Si-H, and Si0 defects. It is presumably concluded that the hole trapping centers are the Si-Si defects in the valence band tail. We estimate that the hole trapping cross-section is nearly equal to 10−20cm2.

Implantation Induced Charge Trapping and Interface States Generation in Si-SiO2 System

1985 ◽  
Vol 54 ◽  
Author(s):  
H. Wong ◽  
N. W. Cheung
Keyword(s):  
Cross Section ◽  
Charge Trapping ◽  
Interface States ◽  
Electron Trapping ◽  
Constant Voltage ◽  
Hole Trapping ◽  
A Value ◽  
Trapping Centers ◽  
Induced Charge ◽  
Silicon Implantation

ABSTRACTConstant-voltage stressing has been used to investigate the damage of SiO2 and the Si/SiO2 interface induced by silicon implantation through polysilicon/SiO2/P-Si structures annealed at 950°C. The implant doses used were from 5×1011cm-2 to 1014cm-2. Although no detectable interface states density was observed after the annealing for implant doses less than 2×1013cm-2, interface states generation, hole trapping, and electron trapping were found to be greatly enhanced by the Si implantation. The interface states density generation rate was found to increase with higher implant doses. The density of hole trapping centers saturated at a value of 3×1012cm-2 for implant doses higher than 2×1012cm∼-2. The density of electron trapping centers was found to increase with implant dose, while the associated trapping cross section was much smaller than that of the unimplant oxide.

Sensitization of the Holes Lifetime by the Addition of Dangling Bonds in a-Si:H

2001 ◽  
Vol 664 ◽  
Author(s):  
L.F. Fonseca ◽  
S. Z. Weisz ◽  
I. Balberg
Keyword(s):  
Valence Band ◽  
Important Implication ◽  
Dangling Bond ◽  
Dangling Bonds ◽  
Defect States ◽  
Band Tail ◽  
Present Understanding

ABSTRACTThis paper is concerned with the phenomenon of the increase of the holes lifetime with the increase of the dangling bond concentration in a-Si:H. This rather surprising phenomenon that was observed, but not discussed, previously is shown to be a non-trivial effect which is based on the charged nature of the dangling bonds and a special scenario of the concentrations of the various defect states in the material. The most important implication of our study is that the charged dangling bonds can sensitize the valence band tail states, in contrast with the accepted roles of these types of states. The present understanding suggests that many new interesting phototransport phenomena can be found in a-Si:H.

scholarly journals Copper-nanoparticle-dispersed amorphous BaTiO3 thin films as hole-trapping centers: enhanced photocatalytic activity and stability

RSC Advances ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 5045-5052 ◽  
Author(s):  
Su-Wei Zhang ◽  
Shun Li ◽  
Bo-Ping Zhang ◽  
Dongfang Yu ◽  
Zuotai Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Photocatalytic Activity ◽  
Photocatalytic Degradation ◽  
Copper Nanoparticle ◽  
Photoelectrochemical Performance ◽  
Hole Trapping ◽  
Degradation Activity ◽  
Trapping Centers

The photocatalytic degradation activity and photoelectrochemical performance of amorphous BaTiO3 films can be improved after introducing Cu NPs, and the oxidation of Cu is strongly hindered when dispersing in the amorphous BaTiO3 films that serve as h+-trapping centers.

States in the Gap of Improved a-Ge:H Studied by Photomodulation Spectroscopy

1991 ◽  
Vol 219 ◽  
Author(s):  
L. Chen ◽  
J. Tauc ◽  
D. Pang ◽  
W. A. Turner ◽  
W. Paul
Keyword(s):  
Glow Discharge ◽  
Valence Band ◽  
Density Of States ◽  
Pump Beam ◽  
Defect Density ◽  
Dangling Bond ◽  
Band Tail ◽  
Valence Bands

ABSTRACTThe photomodulation spectra of a-Ge:H of average photoelectronic quality(ημπ = 1 × 10-10cm2/V) and of improved quality (ημπ = 3 × 10-7cm2/V), produced under different plasma conditions in an r.f. diode reactor by glow discharge, were measured at 80K and are analyzed in analogy with earlier studies of a-Si:H. The spectra of the poorer material are dominated by transitions between dangling bond states and the conduction and valence bands. By contrast, the spectra of the better material require contributions of transitions from the band tail states, indicating that the reduced defect density has resulted in pump-beam induced quasi-Fermi levels reaching near the conduction and valence band edges. A very acceptable fit between plausible density-of-states distributions and the experimental spectra has been found.

An Alternative Model for the Kinetics of Light-Induced Defects in A-Si:H

1991 ◽  
Vol 219 ◽  
Author(s):  
Paulo V. Santos ◽  
W. B. Jackson ◽  
R. A. Street
Keyword(s):  
Time Dependence ◽  
Valence Band ◽  
Defect Formation ◽  
Defect Density ◽  
Generation Rate ◽  
Band Tail ◽  
Defect Generation ◽  
Wide Range ◽  
Induced Defects ◽  
Kinetics Of

ABSTRACTThe kinetics of light-induced defect generation in a-Si:H was investigated over a wide range of illumination intensities and temperatures. The defect density around 1016cm-3 exhibits a power-law time dependence Ns ∼ G2εfε with ε = 0.2 to 0.3, where G is the photo-carrier generation rate. A model for the kinetics of defect generation is proposed based on the existence of an exponential distribution of defect formation energies in the amorphous network, associated with the valence band tail states. The model reproduces the observed time dependence of the defect density with an exponent e determined by the exponential width of the valence band tail. The temperature dependence of the defect generation rate is well-reproduced by the model, which provides a connection between the Stabler-Wronski effect and the weak-bond model.

Charge trapping studies in SiO2using high current injection from Si‐rich SiO2films

1980 ◽  
Vol 51 (9) ◽  
pp. 4830-4841 ◽  
Author(s):  
D. J. DiMaria ◽  
R. Ghez ◽  
D. W. Dong
Keyword(s):  
Charge Trapping ◽  
Current Injection ◽  
High Current

Study of charge trapping as a degradation mechanism in electrically alterable read‐only memories

1982 ◽  
Vol 53 (1) ◽  
pp. 43-47 ◽  
Author(s):  
C. Falcony ◽  
D. J. DiMaria ◽  
D. W. Dong ◽  
K. M. DeMeyer
Keyword(s):  
Degradation Mechanism ◽  
Charge Trapping
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