Investigation of charge trapping centers in silicon nitride films with a laser‐microwave photoconductive method

1993 ◽  
Vol 62 (6) ◽  
pp. 615-617 ◽  
Author(s):  
Lei Zhong ◽  
Fumio Shimura
Keyword(s):  
Silicon Nitride ◽  
Charge Trapping ◽  
Silicon Nitride Films ◽  
Trapping Centers

Charge-trapping defects in Cat-CVD silicon nitride films

2001 ◽  
Vol 395 (1-2) ◽  
pp. 266-269 ◽  
Author(s):  
T Umeda ◽  
Y Mochizuki ◽  
Y Miyoshi ◽  
Y Nashimoto
Keyword(s):  
Silicon Nitride ◽  
Charge Trapping ◽  
Silicon Nitride Films

Composition and Properties of PECVD Silicon Nitride Films Deposited from SiH4, N2, He Gases

1991 ◽  
Vol 219 ◽  
Author(s):  
J. H. Souk ◽  
G. N. Parsons ◽  
J. Batey
Keyword(s):  
Silicon Nitride ◽  
Electrical Properties ◽  
Etch Rate ◽  
Charge Trapping ◽  
Film Stress ◽  
Bond Density ◽  
Silicon Nitride Films ◽  
Current Voltage ◽  
Optical And Mechanical Properties ◽  
Wet Etch

ABSTRACTAmorphous silicon nitride films deposited from a gas mixture of SiH4 and N2 with a large flow of He have shown many interesting characteristics. The films show a wide variety of electrical, optical, and mechanical properties with varying amounts of SiH4 and N2. The effect of N2 flow rate on film composition in N2-SiH4 processes is quite different from that of NH3 flow in NH3-SiH4 processes. The films were characterized by measurements of (1) Si-H and N-H bond density and bonded hydrogen content, both from infrared absorption, (2) Si/N ratio, (3) refractive index, (4) film stress, and (5) wet chemical etch rate and (6) electrical properties including current-voltage (I-V) and capacitance-voltage (C-V). We find that adding helium to the PECVD process enhances the incorporation of nitrogen in the film and an optimized flow of SiH4 improves the electrical properties. Films with optimum electrical properties with minimum charge trapping are obtained with N/Si ratio close to 1.33. These films have a small amount of Si-H and N-H bonds, and a low etch rate (> 100 A/min) in aqueous HF solution. The properties of these low temperature (250°C) PECVD nitrides have many similarities with LPCVD nitrides. Compared with films deposited from SiH4, NH3 mixture, these films exhibit very low wet etch rates and much lower H contents, but greater hysteresis in C-V characteristics.

Charge trapping centers in N‐rich silicon nitride thin films

1992 ◽  
Vol 61 (2) ◽  
pp. 216-218 ◽  
Author(s):  
W. L. Warren ◽  
J. Kanicki ◽  
F. C. Rong ◽  
E. H. Poindexter ◽  
P. J. McWhorter
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Charge Trapping ◽  
Trapping Centers

Influences of Processing Chemistry of Silicon Nitride Films on the Charge Trapping Behavior of Oxide/CVD‐Nitride/Oxide Capacitors

1988 ◽  
Vol 135 (3) ◽  
pp. 776-777 ◽  
Author(s):  
B. Y. Nguyen ◽  
P. J. Tobin ◽  
K. W. Teng ◽  
H. G. Tompkins ◽  
K. M. Chang
Keyword(s):  
Silicon Nitride ◽  
Charge Trapping ◽  
Silicon Nitride Films ◽  
Nitride Oxide

Low-Temperature Formation of SiNx Gate Insulator for Thin-Film Transistor Using CAT-CVD Method

1998 ◽  
Vol 508 ◽  
Author(s):  
A. Izumi ◽  
T. Ichise ◽  
H. Matsumura
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
State Density ◽  
Gate Insulator ◽  
Catalytic Chemical Vapor Deposition ◽  
Silicon Nitride Films

AbstractSilicon nitride films prepared by low temperatures are widely applicable as gate insulator films of thin film transistors of liquid crystal displays. In this work, silicon nitride films are formed around 300 °C by deposition and direct nitridation methods in a catalytic chemical vapor deposition system. The properties of the silicon nitride films are investigated. It is found that, 1) the breakdown electric field is over 9MV/cm, 2) the surface state density is about 1011cm−2eV−1 are observed in the deposition films. These result shows the usefulness of the catalytic chemical vapor deposition silicon nitride films as gate insulator material for thin film transistors.

ChemInform Abstract: VERY THIN SILICON NITRIDE FILMS GROWN BY DIRECT THERMAL REACTION WITH NITROGEN

1978 ◽  
Vol 9 (28) ◽  
Author(s):  
T. ITO ◽  
S. HIJIYA ◽  
T. NOZAKI ◽  
H. ARAKAWA ◽  
M. SHINODA ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Thermal Reaction ◽  
Silicon Nitride Films ◽  
Thin Silicon
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