The LPCVD of Silicon Nitride Films from Alkylazidosilanes

1990 ◽  
Vol 204 ◽  
Author(s):  
David A. Roberts ◽  
Arthur K. Hochberg ◽  
David L. O'Meara ◽  
Felicia Rusnak ◽  
Herman Hockenhull
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Film Properties ◽  
Deposition Rates ◽  
Extreme Caution ◽  
Silicon Nitride Films ◽  
Sensitive Film

ABSTRACTThe series of azidosilanes, SiEtn(N3)4-n where n = 1,2,3 and Si(t-butyl)(N3)3 were evaluated for the LPCVD of silicon nitride thin films. Both SiEt(N3)3 and Si(t-butyl)(N3)3 gave deposition rates of approximately 100 Å/min at temperatures of 450–500°C but films appear to be porous and air sensitive. Film properties improved as deposition temperatures were increased to 600°C. The polyazides must be handled with extreme caution. An unexplained detonation of one sample of SiEt(N3)3 occurred during the course of this study.

Properties and Thermal Behaviour of Si3N4 Thin Films

1993 ◽  
Vol 327 ◽  
Author(s):  
O. Knotek ◽  
F. LÖffler ◽  
L. Wolkers
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Coating Process ◽  
Coating Materials ◽  
Target Orientation ◽  
Silicon Nitride Films ◽  
Wear And Corrosion ◽  
Thermal Stability Of ◽  
Thermal And Chemical Stability ◽  
Oriented Single Crystal

AbstractThe applications of thin film technologies are increasing. A variety of different ceramic and hard coating materials are deposited. Silicon nitride is one of the materials which seems to be quite interesting for the use as coating material. An use as a wear and corrosion protective coating seems to be conceivable. Silicon nitride is known to have a good thermalshock resistivity, thermal and chemical stability and good mechanical and wear resistant properties. If these properties are also given for deposited metastable PVD Si-N-coatings has to be evaluated yet.This paper describes the influence of different coating process parameters of the MSIP process like DC and RF mode, reactive and non reactive sputter processes and target orientation on the properties of silicon nitride films. It is shown, that coatings deposited with a 100 oriented single crystal target have the highest deposition rate and the best mechanical properties. The thermal stability of these thin films is insufficient although it can be improved by a carbon incorporation.

scholarly journals Material Structure and Mechanical Properties of Silicon Nitride and Silicon Oxynitride Thin Films Deposited by Plasma Enhanced Chemical Vapor Deposition

Surfaces ◽  
2018 ◽  
Vol 1 (1) ◽  
pp. 59-72 ◽  
Author(s):  
Zhenghao Gan ◽  
Changzheng Wang ◽  
Zhong Chen
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Fracture Toughness ◽  
Silicon Nitride ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Flow Rates ◽  
Silicon Nitride Films

Silicon nitride and silicon oxynitride thin films are widely used in microelectronic fabrication and microelectromechanical systems (MEMS). Their mechanical properties are important for MEMS structures; however, these properties are rarely reported, particularly the fracture toughness of these films. In this study, silicon nitride and silicon oxynitride thin films were deposited by plasma enhanced chemical vapor deposition (PECVD) under different silane flow rates. The silicon nitride films consisted of mixed amorphous and crystalline Si3N4 phases under the range of silane flow rates investigated in the current study, while the crystallinity increased with silane flow rate in the silicon oxynitride films. The Young’s modulus and hardness of silicon nitride films decreased with increasing silane flow rate. However, for silicon oxynitride films, Young’s modulus decreased slightly with increasing silane flow rate, and the hardness increased considerably due to the formation of a crystalline silicon nitride phase at the high flow rate. Overall, the hardness, Young modulus, and fracture toughness of the silicon nitride films were greater than the ones of silicon oxynitride films, and the main reason lies with the phase composition: the SiNx films were composed of a crystalline Si3N4 phase, while the SiOxNy films were dominated by amorphous Si–O phases. Based on the overall mechanical properties, PECVD silicon nitride films are preferred for structural applications in MEMS devices.

Prepared and Surface Analyzed of Nano-Silicon Nitride Thin Films

2011 ◽  
Vol 233-235 ◽  
pp. 2015-2018
Author(s):  
Gui Wen Yu ◽  
Jing Dong ◽  
Ye Tian ◽  
Wen Xin Li ◽  
Xue Gong
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Deposition Rate ◽  
Room Temperature ◽  
Atomic Ratio ◽  
Sputtering Deposition ◽  
Depth Profiles ◽  
Silicon Nitride Films ◽  
Nano Silicon ◽  
Temperature Depth

Thin silicon nitride films were prepared on PET by r.f. reactive sputtering. Deposition Rate, reactive mechanisms, the thickness attribution, chemical stoichiometry and impurity were studied by means of RBS, XPS, and ellipsometer. Results show that chemical stoichiometric films with N-to-Si atomic ratio of 4:3 were achieved even at room temperature. Depth profiles of XPS and SIMS reveal that oxide exists only at the interface between nitride and substrate and Ar atoms are buried in the films.

Catalytic Oxidation of Silicon Nitride thin films Using Potassium*

1988 ◽  
Vol 131 ◽  
Author(s):  
J. W. Rogers ◽  
D. S. Blair ◽  
C. H. F. Peden
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Thermal Oxidation ◽  
Catalytic Oxidation ◽  
Budget Process ◽  
Thermal Budget ◽  
Silicon Nitride Films ◽  
Time Requirements ◽  
Low Thermal Budget ◽  
Temperature Time

ABSTRACTThin silicon nitride films on a Si(100) substrate have been oxidized using potassium in a low thermal budget process. The presence of potassium on the SisN4 surface greatly lowers the temperature-time requirements for oxidation as compared with direct thermal oxidation.

Film Properties of Low-k Silicon Nitride Films Formed by Hexachlorodisilane and Ammonia

2000 ◽  
Vol 147 (6) ◽  
pp. 2284 ◽  
Author(s):  
Masayuki Tanaka ◽  
Shigehiko Saida ◽  
Yoshitaka Tsunashima
Keyword(s):  
Silicon Nitride ◽  
Film Properties ◽  
Silicon Nitride Films ◽  
Low K

Characterization of LPCVD of Silicon Nitride in a Rapid Thermal Processor

1989 ◽  
Vol 146 ◽  
Author(s):  
F. Scott Johnson ◽  
Roderick M. Miller ◽  
Mehmet C. Öztüirk ◽  
Jimmie J. Wortman
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Electrical Characteristics ◽  
Deposition Rates ◽  
Silicon Nitride Films ◽  
Tube Furnaces ◽  
Pressure Chemical

ABSTRACTLow pressure chemical vapor deposition of silicon nitride has been studied using a cold-walled, lamp heated, rapid thermal processor. Films were deposited at low presure using both silane and dichlorosilane, diluted in hydrogen and argon carrier gasses. The dichlorosilane and ammonia reaction was found to be unsuitable for use in the cold-walled system. Rapid thermal chemical vapor depositions using silane and ammonia did not result in “bullseye” non-uniformities reported for low presure depositions in conventional hot-walled tube furnaces. Ammonia to silane ratios of 120:1 were found to result in stoichiometric silicon nitride films. Deposition rates are well suited for dielectricapplications. Electrical characteristics are comparable to those of films deposited using APCVD and LPCVD methods.

Strong Visible Photoluminescence in Silicon Nitride thin Films Deposited at High Rates

1993 ◽  
Vol 325 ◽  
Author(s):  
Sadanand V. Deshpande ◽  
Erdogan Gulari ◽  
Steven W. Brown ◽  
S.C. Rand
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Amorphous Materials ◽  
Visible Region ◽  
Chemical Vapor ◽  
Peak Position ◽  
Deposition Rates ◽  
Nitrogen Alloy ◽  
Hot Filament

AbstractAmorphous silicon nitrogen alloy (a-Si:Nx) thin films have been deposited using a novel hot filament chemical vapor deposition (HFCVD) technique. In this method, a hot tungsten filament is used to decompose ammonia to obtain highly reactive nitrogen precursor species which further react with disilane to form silicon nitride thin films. This allows for very high deposition rates ranging from 600 Å/min to 2500 Å/min at low substrate temperatures. These films deposited at high rates show strong photoluminescence (PL) at room temperature in the visible region when excited with the 457 nm line of Ar+ ion laser. Intrinsic defects introduced into the amorphous silicon nitride matrix due to the rapid deposition rates seem to give rise to the visible PL. The PL intensity is at least 8-10 times stronger than silicon nitride films deposited by conventional plasma enhanced CVD. PL peak position of this broad luminescence was varied in the visible region by changing the film stoichiometry (Si/N ratio). The PL peak energy also scales predictably with the refractive index and optical band gap of the films. These samples showed reversible PL fatigue and also have band edge tail states characteristic of amorphous materials.

Transient Thermoreflectance Measurement of Thermal Conductivity of Nanoscale Silicon Nitride Thin Films

2007 ◽  
Author(s):  
SuYuan Bai ◽  
ZhenAn Tang ◽  
ZhengXing Huang ◽  
JiaQi Wang
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Silicon Nitride ◽  
Bulk Material ◽  
Chemical Vapor ◽  
Interfacial Thermal Resistance ◽  
Silicon Nitride Films ◽  
Pressure Chemical ◽  
Material Values ◽  
Thermal Conductivities

The present work measured the thermal conductivities of the silicon nitride films prepared by lower pressure chemical vapor deposition (LPCVD) with thicknesses ranging from 100 nm to 200 nm. The measurements were made at room temperature using the transient photothermal reflectance technique, which is a non-contacting and non-destructive optical approach. The data measured were fitted by genetic algorithm to get the thermal conductivity of thin films and interfacial thermal resistance simultaneously. The results show that thermal conductivities of these films are lower than corresponding bulk material values. The interfacial thermal resistances are in the order of 10−8 m2K/W. It cannot be neglected for the very thin films. Some comparison and analysis for the results were discussed.

BUCKLING MORPHOLOGIES AND INTERFACIAL PROPERTIES OF SILICON NITRIDE FILMS DEPOSITED ON FLOAT GLASS SUBSTRATES

2015 ◽  
Vol 22 (04) ◽  
pp. 1550046 ◽  
Author(s):  
YA-DONG SUN ◽  
QI-XIANG CHEN ◽  
YU-FEI FENG ◽  
JUN CHEN ◽  
SEN-JIANG YU
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Interfacial Adhesion ◽  
Interfacial Properties ◽  
Float Glass ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Silicon Nitride Films ◽  
Atomic Force ◽  
The Continuum

We report on the buckling morphologies and interfacial properties of silicon nitride films deposited on float glass substrates. The coexistence of straight-sided and telephone cord buckles can be observed in the silicon nitride films after annealing at a high temperature. The straight-sided structure is metastable and can spontaneously evolve into the telephone cord structure accompanied by the increase in the buckle width and height. The geometric parameters of various buckling structures (including the straight blister, telephone cord and their transition state) have been measured by optical microscopy and atomic force microscopy (AFM). The internal stress and interfacial adhesion of the films are evaluated and analyzed based on the continuum elastic theory. It is valid to measure the interfacial properties of thin films by simplifying the telephone cord buckle as a straight-sided structure. This measurement technique is suitable for all the film systems provided that the buckles can form in the film.

Effects of Substrate Temperature on the Properties of Silicon Nitride Films by PECVD

2013 ◽  
Vol 537 ◽  
pp. 12-15
Author(s):  
Chun Ya Li ◽  
Xi Feng Li ◽  
Long Long Chen ◽  
Ji Feng Shi ◽  
Jian Hua Zhang
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Visible Region ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Glass Substrates ◽  
Silicon Nitride Films ◽  
Atomic Force ◽  
Average Transmittance ◽  
Surface Morphologies

Under different growth conditions, silicon nitride (SiNx) thin films were deposited successfully on Si(100) substrates and glass substrates by plasma enhanced chemical vapor deposition (PECVD). The thickness, refractive index and growth rate of the thin films were tested by ellipsometer. The surface morphologies of the thin films were investigated using atomic force microscope (AFM). The average transmittance in the visible region was over 90%.

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