Film Properties of Low-k Silicon Nitride Films Formed by Hexachlorodisilane and Ammonia

2000 ◽  
Vol 147 (6) ◽  
pp. 2284 ◽  
Author(s):  
Masayuki Tanaka ◽  
Shigehiko Saida ◽  
Yoshitaka Tsunashima
Keyword(s):  
Silicon Nitride ◽  
Film Properties ◽  
Silicon Nitride Films ◽  
Low K

The LPCVD of Silicon Nitride Films from Alkylazidosilanes

1990 ◽  
Vol 204 ◽  
Author(s):  
David A. Roberts ◽  
Arthur K. Hochberg ◽  
David L. O'Meara ◽  
Felicia Rusnak ◽  
Herman Hockenhull
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Film Properties ◽  
Deposition Rates ◽  
Extreme Caution ◽  
Silicon Nitride Films ◽  
Sensitive Film

ABSTRACTThe series of azidosilanes, SiEtn(N3)4-n where n = 1,2,3 and Si(t-butyl)(N3)3 were evaluated for the LPCVD of silicon nitride thin films. Both SiEt(N3)3 and Si(t-butyl)(N3)3 gave deposition rates of approximately 100 Å/min at temperatures of 450–500°C but films appear to be porous and air sensitive. Film properties improved as deposition temperatures were increased to 600°C. The polyazides must be handled with extreme caution. An unexplained detonation of one sample of SiEt(N3)3 occurred during the course of this study.

High Hydrogen Content Silicon Nitride For Photovoltaic Applications Deposited By Hot-Wire Chemical Vapor Deposition

2002 ◽  
Vol 715 ◽  
Author(s):  
Jason K. Holt ◽  
Maribeth Swiatek ◽  
David G. Goodwin ◽  
Harry A. Atwater ◽  
Thomas J. Watson
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Flow Ratio ◽  
Hot Wire ◽  
Film Properties ◽  
High Hydrogen ◽  
Silicon Nitride Films ◽  
Photovoltaic Applications

AbstractSilicon nitride films have been grown by hot-wire chemical vapor deposition and film properties have been characterized as a function of SiH4/NH3 flow ratio. Quadrupole mass spectrometry measurements revealed that NH3 should be present in large excess relative to SiH4 (<10), due to its lower decomposition probability on the wire. Silicon nitride films were produced with refractive indices ranging from 1.8-2.5 and H-content from 9-18 atomic % as the flow ratio increased from 1% to 8%. Fourier Transform Infrared Spectroscopy revealed a change from predominantly N-H to Si-H bonding as the flow ratio increases beyond 6%. Subsequent annealing studies showed different kinetics for H release from Si versus N. Films grown with a low SiH4/NH3 ratio were found to oxidize readily (23 atomic %), while larger ratios yielded no oxygen incorporation.

scholarly journals Low-Temperature Deposition of Silicon Nitride Films by a Cat-CVD Technique-Gas-Phase Diagnoses and Evaluation of Film Properties-

2006 ◽  
Vol 55 (2) ◽  
pp. 142-147
Author(s):  
Hironobu UMEMOTO ◽  
Atsushi MASUDA ◽  
Hideki MATSUMURA ◽  
Toshiharu MINAMIKAWA ◽  
Akira HEYA ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Low Temperature ◽  
Gas Phase ◽  
Film Properties ◽  
Silicon Nitride Films ◽  
Low Temperature Deposition ◽  
Temperature Deposition

Low-Temperature Formation of SiNx Gate Insulator for Thin-Film Transistor Using CAT-CVD Method

1998 ◽  
Vol 508 ◽  
Author(s):  
A. Izumi ◽  
T. Ichise ◽  
H. Matsumura
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
State Density ◽  
Gate Insulator ◽  
Catalytic Chemical Vapor Deposition ◽  
Silicon Nitride Films

AbstractSilicon nitride films prepared by low temperatures are widely applicable as gate insulator films of thin film transistors of liquid crystal displays. In this work, silicon nitride films are formed around 300 °C by deposition and direct nitridation methods in a catalytic chemical vapor deposition system. The properties of the silicon nitride films are investigated. It is found that, 1) the breakdown electric field is over 9MV/cm, 2) the surface state density is about 1011cm−2eV−1 are observed in the deposition films. These result shows the usefulness of the catalytic chemical vapor deposition silicon nitride films as gate insulator material for thin film transistors.

ChemInform Abstract: VERY THIN SILICON NITRIDE FILMS GROWN BY DIRECT THERMAL REACTION WITH NITROGEN

1978 ◽  
Vol 9 (28) ◽  
Author(s):  
T. ITO ◽  
S. HIJIYA ◽  
T. NOZAKI ◽  
H. ARAKAWA ◽  
M. SHINODA ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Thermal Reaction ◽  
Silicon Nitride Films ◽  
Thin Silicon

scholarly journals Effect of Thermal Annealing on the Photoluminescence of Dense Si Nanodots Embedded in Amorphous Silicon Nitride Films

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 354
Author(s):  
Qianqian Liu ◽  
Xiaoxuan Chen ◽  
Hongliang Li ◽  
Yanqing Guo ◽  
Jie Song ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Chemical Vapor ◽  
Peak Position ◽  
Excitation Wavelength ◽  
Very High Frequency ◽  
Amorphous Silicon Nitride ◽  
Silicon Nitride Films ◽  
High Frequency Plasma

Luminescent amorphous silicon nitride-containing dense Si nanodots were prepared by using very-high-frequency plasma-enhanced chemical vapor deposition at 250 °C. The influence of thermal annealing on photoluminescence (PL) was studied. Compared with the pristine film, thermal annealing at 1000 °C gave rise to a significant enhancement by more than twofold in terms of PL intensity. The PL featured a nanosecond recombination dynamic. The PL peak position was independent of the excitation wavelength and measured temperatures. By combining the Raman spectra and infrared absorption spectra analyses, the enhanced PL was suggested to be from the increased density of radiative centers related to the Si dangling bonds (K0) and N4+ or N20 as a result of bonding configuration reconstruction.

Bulk passivation of multicrystalline silicon solar cells induced by high-rate-deposited (> 1 nm/s) silicon nitride films

2003 ◽  
Vol 11 (2) ◽  
pp. 125-130 ◽  
Author(s):  
J. Hong ◽  
W. M. M. Kessels ◽  
F. J. H. van Assche ◽  
H. C. Rieffe ◽  
W. J. Soppe ◽  
...  
Keyword(s):  
Solar Cells ◽  
Silicon Nitride ◽  
High Rate ◽  
Multicrystalline Silicon ◽  
Silicon Solar Cells ◽  
Silicon Nitride Films ◽  
Bulk Passivation
Sign in / Sign up

Export Citation Format

Share Document