Catalytic Oxidation of Silicon Nitride thin films Using Potassium*

1988 ◽  
Vol 131 ◽  
Author(s):  
J. W. Rogers ◽  
D. S. Blair ◽  
C. H. F. Peden
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Thermal Oxidation ◽  
Catalytic Oxidation ◽  
Budget Process ◽  
Thermal Budget ◽  
Silicon Nitride Films ◽  
Time Requirements ◽  
Low Thermal Budget ◽  
Temperature Time

ABSTRACTThin silicon nitride films on a Si(100) substrate have been oxidized using potassium in a low thermal budget process. The presence of potassium on the SisN4 surface greatly lowers the temperature-time requirements for oxidation as compared with direct thermal oxidation.

Integration of NiSi SALICIDE for Deep Submicron CMOS Technologies

1998 ◽  
Vol 514 ◽  
Author(s):  
X. W. Lin ◽  
N. Ibrahim ◽  
L. Topete ◽  
D. Pramanik
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Cmos Technology ◽  
Deep Submicron ◽  
Thermal Budget ◽  
Si Substrates ◽  
Low Thermal Budget ◽  
Lower Resistivity

ABSTRACTA NiSi-based self-aligned silicidation (SALICIDE) process has been integrated into a 0.25 Ion CMOS technology. It involves rapid thermal annealing (RTA) of Ni thin films (300, Å thick) on Si substrates in the temperature range ≈400 - 700 °C. It was found that the NiSi sheet resistance (Rs) gradually decreases with decreasing linewidth. Parameters, such as RTA temperature, substrate dopant (As vs BF2) and structure (single crystal vs poly), were found to have little effects on Rs. NiSi forms a smoother interface with single crystalSi than with poly Si, and has a slightly lower resistivity. MOSFETs based on NiSi show comparable device characteristics to those obtained with Ti SALICIDE. Upon thermal annealing, NiSi remains stable at 450 °C for more than 39 hours. The same is true for 500 °C anneals up to 6 hours, except for NiSi narrow lines (<0.5 μm) on n+ poly Si substrates whose Rs is moderately increased after a 6 hr anneal. This work demonstrates that with an appropriate low-thermal budget backend process, NiSi SALICIDE can be a viable process for deep submicron ULSI technologies.

scholarly journals Operation of thin-film thermoelectric generator of Ge-rich poly-Ge1-x Sn x on SiO2 fabricated by a low thermal budget process

2019 ◽  
Vol 12 (5) ◽  
pp. 051016
Author(s):  
Kouta Takahashi ◽  
Hiroshi Ikenoue ◽  
Mitsuo Sakashita ◽  
Osamu Nakatsuka ◽  
Shigeaki Zaima ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermoelectric Generator ◽  
Budget Process ◽  
Thermal Budget ◽  
Low Thermal Budget

Low Temperature Remote Plasma Assisted Jet Vapor Deposition of Silicon Nitride

1997 ◽  
Vol 495 ◽  
Author(s):  
J. Veteran ◽  
C. Hobbs ◽  
R. Hegde ◽  
P. Tobin ◽  
V. Wang ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Substrate Surface ◽  
Microwave Cavity ◽  
Promising Technique ◽  
Thermal Budget ◽  
Silicon Nitride Films ◽  
Jet Vapor Deposition ◽  
Process Gases

ABSTRACTAs MOSFET dimensions are aggressively scaled, minimizing the thermal budget becomes critical for limiting the diffusion of channel profiles. Unfortunately, high quality dielectrics with low deposition temperatures have not been readily available. Typical room temperature dielectrics are porous and electrically leaky. A promising technique for low temperature dielectric deposition is Jet Vapor Deposition (JVD). [1] Two coaxial quartz nozzles spray the process gases to the substrate surface at super-sonic speeds while a microwave cavity generates a plasma in the nozzle. [2] We have successfully deposited silicon nitride films using SiH4/He and N2/He gas mixtures. These are the first reported JVD results on 200 mm wafers.

Low-Thermal-Budget Solution Processing of Thin Films of Zinc Ferrite and Other Complex Oxides

2012 ◽  
Vol 1400 ◽  
Author(s):  
Ranajit Sai ◽  
Suresh D. Kulkarni ◽  
K. J. Vinoy ◽  
Navakanta Bhat ◽  
S. A. Shivashankar
Keyword(s):  
Thin Films ◽  
Zinc Ferrite ◽  
Film Deposition ◽  
Vacuum System ◽  
Molar Ratio ◽  
Large Area ◽  
Thermal Budget ◽  
Control Film ◽  
Circuit Components ◽  
Low Thermal Budget

ABSTRACTFurther miniaturization of magnetic and electronic devices demands thin films of advanced nanomaterials with unique properties. Spinel ferrites have been studied extensively owing to their interesting magnetic and electrical properties coupled with stability against oxidation. Being an important ferrospinel, zinc ferrite has wide applications in the biological (MRI) and electronics (RF-CMOS) arenas. The performance of an oxide like ZnFe2O4depends on stoichiometry (defect structure), and technological applications require thin films of high density, low porosity and controlled microstructure, which depend on the preparation process. While there are many methods for the synthesis of polycrystalline ZnFe2O4powder, few methods exist for the deposition of its thin films, where prolonged processing at elevated temperature is not required. We report a novel, microwave-assisted, low temperature (<100°C) deposition process that is conducted in the liquid medium, developed for obtaining high quality, polycrystalline ZnFe2O4thin films on technologically important substrates like Si(100). An environment-friendly solvent (ethanol) and non-hazardous oxide precursors (β-diketonates of Zn and Fe in 1:2 molar ratio), forming a solution together, is subjected to irradiation in a domestic microwave oven (2.45 GHz) for a few minutes, leading to reactions which result in the deposition of ZnFe2O4films on Si (100) substrates suspended in the solution. Selected surfactants added to the reactant solution in optimum concentration can be used to control film microstructure. The nominal temperature of the irradiated solution, i.e., film deposition temperature, seldom exceeds 100°C, thus sharply lowering the thermal budget. Surface roughness and uniformity of large area depositions (50x50 mm2) are controlled by tweaking the concentration of the mother solution. Thickness of the films thus grown on Si (100) within 5 min of microwave irradiation can be as high as several microns. The present process, not requiring a vacuum system, carries a very low thermal budget and, together with a proper choice of solvents, is compatible with CMOS integration. This novel solution-based process for depositing highly resistive, adherent, smooth ferrimagnetic films on Si (100) is promising to RF engineers for the fabrication of passive circuit components. It is readily extended to a wide variety of functional oxide films.

Properties and Thermal Behaviour of Si3N4 Thin Films

1993 ◽  
Vol 327 ◽  
Author(s):  
O. Knotek ◽  
F. LÖffler ◽  
L. Wolkers
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Coating Process ◽  
Coating Materials ◽  
Target Orientation ◽  
Silicon Nitride Films ◽  
Wear And Corrosion ◽  
Thermal Stability Of ◽  
Thermal And Chemical Stability ◽  
Oriented Single Crystal

AbstractThe applications of thin film technologies are increasing. A variety of different ceramic and hard coating materials are deposited. Silicon nitride is one of the materials which seems to be quite interesting for the use as coating material. An use as a wear and corrosion protective coating seems to be conceivable. Silicon nitride is known to have a good thermalshock resistivity, thermal and chemical stability and good mechanical and wear resistant properties. If these properties are also given for deposited metastable PVD Si-N-coatings has to be evaluated yet.This paper describes the influence of different coating process parameters of the MSIP process like DC and RF mode, reactive and non reactive sputter processes and target orientation on the properties of silicon nitride films. It is shown, that coatings deposited with a 100 oriented single crystal target have the highest deposition rate and the best mechanical properties. The thermal stability of these thin films is insufficient although it can be improved by a carbon incorporation.

Thermal Oxidation in Wet Oxygen of Reactive Ion‐Beam Sputter‐Deposited Silicon Nitride Films

1991 ◽  
Vol 138 (4) ◽  
pp. 1084-1089 ◽  
Author(s):  
A. Fourrier ◽  
A. Bosseboeuf ◽  
D. Bouchier ◽  
G. Gautherin
Keyword(s):  
Silicon Nitride ◽  
Thermal Oxidation ◽  
Ion Beam ◽  
Silicon Nitride Films ◽  
Sputter Deposited

The LPCVD of Silicon Nitride Films from Alkylazidosilanes

1990 ◽  
Vol 204 ◽  
Author(s):  
David A. Roberts ◽  
Arthur K. Hochberg ◽  
David L. O'Meara ◽  
Felicia Rusnak ◽  
Herman Hockenhull
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Film Properties ◽  
Deposition Rates ◽  
Extreme Caution ◽  
Silicon Nitride Films ◽  
Sensitive Film

ABSTRACTThe series of azidosilanes, SiEtn(N3)4-n where n = 1,2,3 and Si(t-butyl)(N3)3 were evaluated for the LPCVD of silicon nitride thin films. Both SiEt(N3)3 and Si(t-butyl)(N3)3 gave deposition rates of approximately 100 Å/min at temperatures of 450–500°C but films appear to be porous and air sensitive. Film properties improved as deposition temperatures were increased to 600°C. The polyazides must be handled with extreme caution. An unexplained detonation of one sample of SiEt(N3)3 occurred during the course of this study.

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