High Rate Deposition of Hydrogenated Amorphous Silicon Films by ECR Plasma CVD

1989 ◽  
Vol 165 ◽  
Author(s):  
S. Ozaki ◽  
T. Akahori ◽  
T. Tani ◽  
S. Nakayama
Keyword(s):  
Amorphous Silicon ◽  
Gas Flow ◽  
Electron Cyclotron Resonance ◽  
Hydrogenated Amorphous Silicon ◽  
Dark Conductivity ◽  
Utilization Efficiency ◽  
High Rate ◽  
Plasma Cvd ◽  
Ecr Plasma ◽  
Hydrogenated Amorphous

AbstractA new electron cyclotron resonance (ECR) plasma CVD system has been developed in order to obtain high deposition rates. By using this system, hydrogenated amorphous silicon (a-Si:H) films have been prepared at a deposition rate of 1.0. μ m/min. The utilization efficiency of SiH4 gas is 16% under such conditions. Films prepared at 1.0 μ m/min have high photoconductivity (σ ph) of 10-6 S/cm and low dark conductivity (σ d) of 10-12 S/cm, leading to a high photosensitivity of σ ph/σ d=106. Both high microwave power and high SiH4 gas flow rates are essential to the high rate deposition of sufficiently photosensitive a-Si:H films. Annealing at 300° C improves the photosensitivity up to σ ph/σ d=107.

Amorphous Silicon-Carbon Alloys and Amorphous Carbon from Direct Methane and Ethylene Activation by ECR

1997 ◽  
Vol 467 ◽  
Author(s):  
J. P. Conde ◽  
V. Chu ◽  
F. Giorgis ◽  
C. F. Pirrt ◽  
S. Arekat
Keyword(s):  
Carbon Source ◽  
Amorphous Silicon ◽  
Gas Flow ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Plasma Stream ◽  
Ecr Plasma ◽  
Silicon Carbon ◽  
Gas Flow Ratio ◽  
Hydrogenated Amorphous

ABSTRACTHydrogenated amorphous silicon-carbon alloys are prepared using electron-cyclotron resonance (ECR) plasma-enhanced chemical vapor deposition. Hydrogen is introduced into the source resonance cavity as an excitation gas. Silane is introduced in the main chamber in the vicinity of the plasma stream, whereas the carbon source gases, methane or ethylene, are introduced either with the silane or with the hydrogen as excitation gases. The effect of the type of carbon-source gas, excitation gas mixture and silane-to-carbon source gas flow ratio on the deposition rate, bandgap, subgap density of states, spin density and hydrogen evolution are studied.

Properties of Doped a-Si:H Films Deposited by Ecr Plasma CVD

1990 ◽  
Vol 204 ◽  
Author(s):  
H. Murai ◽  
M. Hayama ◽  
K. Kobayashi ◽  
T. Yamazaki
Keyword(s):  
Electron Cyclotron Resonance ◽  
Optical Emission ◽  
Dark Conductivity ◽  
Deposition Condition ◽  
Plasma Cvd ◽  
Film Properties ◽  
Plasma Properties ◽  
Hydrogen Incorporation ◽  
Ecr Plasma ◽  
Hydrogenated Amorphous

ABSTRACTPhosphorous doped hydrogenated amorphous silicon films were deposited by microwave electron cyclotron resonance (ECR) plasma CVD at a substrate temperature of 100°C. Electrical, optical and hydrogen-incorporation properties of the films have been investigated. By optimizing the deposition condition, the dark conductivity of 3×10−4S/cm is realized without subsequent annealing. Relations between the film properties and ECR plasma properties have been studied by means of optical emission spectroscopy (OES) and quadrupole mass spectroscopy (QMS).

Properties of Hydrogenated Amorphous Silicon Prepared by ECR Plasma CVD Method

1988 ◽  
Vol 27 (Part 1, No. 11) ◽  
pp. 2026-2031 ◽  
Author(s):  
Masatoshi Kitagawa ◽  
Kentaro Setsune ◽  
Yoshio Manabe ◽  
Takashi Hirao
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Plasma Cvd ◽  
Ecr Plasma ◽  
Cvd Method ◽  
Hydrogenated Amorphous

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
Guofu Hou ◽  
Xinhua Geng ◽  
Xiaodan Zhang ◽  
Ying Zhao ◽  
Junming Xue ◽  
...  
Keyword(s):  
Phase Transition ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
High Rate ◽  
Very High Frequency ◽  
High Quality ◽  
Working Pressure ◽  
Hydrogen Dilution ◽  
Hydrogenated Amorphous

AbstractHigh rate deposition of high quality and stable hydrogenated amorphous silicon (a-Si:H) films were performed near the threshold of amorphous to microcrystalline phase transition using a very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The effect of hydrogen dilution on optic-electronic and structural properties of these films was investigated by Fourier-transform infrared (FTIR) spectroscopy, Raman scattering and constant photocurrent method (CPM). Experiment showed that although the phase transition was much influenced by hydrogen dilution, it also strongly depended on substrate temperature, working pressure and plasma power. With optimized condition high quality and high stable a-Si:H films, which exhibit σph/σd of 4.4×106 and deposition rate of 28.8Å/s, have been obtained.

Effect of Nitrogen Doping on the Structure and Optical Properties of N-Type Hydrogenated Amorphous Silicon Thin Films

2011 ◽  
Vol 383-390 ◽  
pp. 6980-6985
Author(s):  
Mao Yang Wu ◽  
Wei Li ◽  
Jun Wei Fu ◽  
Yi Jiao Qiu ◽  
Ya Dong Jiang
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Amorphous Silicon ◽  
Photoelectron Spectroscopy ◽  
Gas Flow ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Silicon Thin Films ◽  
Frequency Plasma ◽  
Hydrogenated Amorphous

Hydrogenated amorphous silicon (a-Si:H) thin films doped with both Phosphor and Nitrogen are deposited by ratio frequency plasma enhanced chemical vapor deposition (PECVD). The effect of gas flow rate of ammonia (FrNH3) on the composition, microstructure and optical properties of the films has been investigated by X-ray photoelectron spectroscopy, Raman spectroscopy and ellipsometric spectra, respectively. The results show that with the increase of FrNH3, Si-N bonds appear while the short-range order deteriorate in the films. Besides, the optical properties of N-doped n-type a-Si:H thin films can be easily controlled in a PECVD system.

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