Structural Investigation of the Silver—Polyimide Interface by Cross—Sectional Ten and Ion—Beam Sputtering

1990 ◽  
Vol 203 ◽  
Author(s):  
A. Foitzik ◽  
F. Faupel
Keyword(s):  
Structural Investigation ◽  
Elevated Temperatures ◽  
Ion Beam ◽  
Depth Profiling ◽  
Ion Beam Sputtering ◽  
Radiotracer Technique ◽  
Cross Sectional ◽  
Ag Particles ◽  
Beam Sputtering ◽  
Ag Clusters

ABSTRACTWhen metals are deposited on polymers at low rates and elevated temperatures extended and non—uniform interfaces may form, the structural investigation of which requiresspecial techniques. In this paper the morphology of the silver—PMDA—ODA boundary formed during vapor deposition of the metal at 360 ºC has been investigated by means of cross—section TEM and a radiotracer technique in combination with ion—beam sputtering (IBS) for depth profiling. Ag was found to form clusters at the interface, but nearly spherical Ag particles up to diameters as large as 28 nm were also observed within the bulk of the polymer. The formation of Ag clusters is also reflected in the depth profiles, which, in addition, provide direct evidence for the diffusion o; singel Ag atoms deep into the polyimide. Diffusivities in the range of 10–21 – 10–18 m/s were determined for 300 ºC< T < 400 ºC. The Arrhenius plot is curved in accordance with a free—volume mechanism of diffusion. Cross—sectional TEM and low—energyIBS—depth profiling turned out to be an ideal combination for the investigation of extended metal—polymer interfaces.

High Dose Implantation of Nickel into Silicon

1985 ◽  
Vol 54 ◽  
Author(s):  
G. J. Campisi ◽  
H. B. DIETRICH ◽  
M. Delfino ◽  
D. K. Sadana
Keyword(s):  
Electron Microscopy ◽  
Solid Phase ◽  
Ion Beam ◽  
Depth Profiling ◽  
Silicon Wafers ◽  
High Dose ◽  
Ion Beam Sputtering ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Beam Sputtering

ABSTRACTSeveral silicon wafers were implanted with 58Ni+ at an energy of 170 keV and a current density of 12 μA cm-2 to doses between 5 × 1015 and 1.8 × 1018 ions cm-2. The substrates were phosphorus doped n-type <100> Czochralski grown silicon wafers. The wafers were water cooled during implantation and the surface temperatures was monitored with an infrared pyrometer and controlled to < 70°C. Samples were subsequently furnace annealed at 900°C for 30 min in nitrogen. The as-implanted and annealed samples were analyzed using cross-sectional transmission electron microscopy (XTEM), Rutherford backscattering (RBS) spectroscopy, spreading resistance depth profiling (SRP), and scanning electron microscopy (SEM). Micro-crystallites of NiSi2 (2–5nm) buried within an amorphous matrix formed during the 1.5 × 1017 ions cm-2 dose implantation. For higher doses above 3 × 1017 Ni+ cm-2, ion beam sputtering occurred. After annealing, rapid diffusion of nickel and solid-phase recrystallization of the amorphous regions occurred.

TEM Study of Co/Pd and Co/Au Multilayers

1993 ◽  
Vol 51 ◽  
pp. 1036-1037
Author(s):  
A.E.M. De Veirman ◽  
F.J.G. Hakkens ◽  
W.M.J. Coene ◽  
F.J.A. den Broeder
Keyword(s):  
Magnetic Anisotropy ◽  
Ion Beam ◽  
Perpendicular Magnetic Anisotropy ◽  
Optical Recording ◽  
Magnetic Multilayer ◽  
Ion Beam Sputtering ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
Substrate Temperatures

There is currently great interest in magnetic multilayer (ML) thin films (see e.g.), because they display some interesting magnetic properties. Co/Pd and Co/Au ML systems exhibit perpendicular magnetic anisotropy below certain Co layer thicknesses, which makes them candidates for applications in the field of magneto-optical recording. It has been found that the magnetic anisotropy of a particular system strongly depends on the preparation method (vapour deposition, sputtering, ion beam sputtering) as well as on the substrate, underlayer and deposition temperature. In order to get a better understanding of the correlation between microstructure and properties a thorough cross-sectional transmission electron microscopy (XTEM) study of vapour deposited Co/Pd and Co/Au (111) MLs was undertaken (for more detailed results see ref.).The Co/Pd films (with fixed Pd thickness of 2.2 nm) were deposited on mica substrates at substrate temperatures Ts of 20°C and 200°C, after prior deposition of a 100 nm Pd underlayer at 450°C.

Ion Beam Sputtering for High Resolution Depth Profiling

2009 ◽  
Vol 15 (3) ◽  
pp. 216-219 ◽  
Author(s):  
Hee Jae Kang ◽  
Dae Won Moon ◽  
Hyung-Ik Lee
Keyword(s):  
High Resolution ◽  
Ion Beam ◽  
Depth Profiling ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

A New Technique for Depth Profiling on a Nanometer Scale

1995 ◽  
Vol 405 ◽  
Author(s):  
H. Schwenke ◽  
J. Knoth ◽  
R. Günther ◽  
G. Wiener ◽  
R. Bormann
Keyword(s):  
Ion Beam ◽  
Depth Profiling ◽  
Depth Resolution ◽  
Ion Source ◽  
New Technique ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering ◽  
A New Technique

AbstractA new technique is presented for the determination of concentration depth profiles. Surface atoms are sputtered by an ion beam and deposited on a clean silicon wafer. The wafer is rotated behind a slit in step with the sputtering progress. In this way the depth profile of the sample is transferred into a lateral distribution of the sputtered atoms on the target wafer. Subsequently the wafer is scanned by Total Reflection X-ray Fluorescence Spectrometry (TXRF) which is capable of detecting traces of metallic impurities on wafers down to 10-4 of an atomic monolayer. The sequence of ion-beam sputtering, deposition of the sputtered atoms and TXRF analysis results in an excellent depth resolution in the case of areal structures. Using an ion source of the Kaufmann type, an extrapolated perpendicular resolution better than 0.1 nm was obtained for a 1500 mm2 surface. For a surface area of 3 mm2 a depth resolution of 1 nm is expected. 1.4 nm was actually measured to be the width of a coherent Ti/Al-interface within a layered structure.

Novel Multiferroic Lead-Free BaTiO3/FeBSi Composite Films

2010 ◽  
Vol 123-125 ◽  
pp. 157-160
Author(s):  
Zhen Zhen Zhou ◽  
Deng Lu Hou ◽  
Li Ma ◽  
Cong Mian Zhen
Keyword(s):  
Intermediate Phase ◽  
Ion Beam ◽  
Composite Films ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Si Substrates ◽  
Microscopy Image ◽  
Beam Sputtering

“Green” multiferroic BaTiO3/FeBSi composite films were grown by pulsed laser deposition and ion beam sputtering on general Pt/Ti/SiO2/Si substrates. Room temperature X-ray diffraction and Raman scattering show that the crystal structures of BaTiO3 and FeBSi are tetragonal and amorphous, respectively, and no additional or intermediate phase peaks appears in the composite films. A cross-sectional scanning electron microscopy image clearly demonstrates a 2-2 type structure with sharp interface between the top FeBSi layer and bottom BaTiO3 layer. The magnetic properties of the top FeBSi are obviously modified by the bottom BaTiO3. The composite films show obvious ferroelectric feature.

Structural investigation of high-transmittance aluminum oxynitride films deposited by ion beam sputtering

2010 ◽  
Vol 43 (7) ◽  
pp. 1089-1094 ◽  
Author(s):  
Paul W. Wang ◽  
Jin-Cherng Hsu ◽  
Yung-Hsin Lin ◽  
Huang-Lu Chen
Keyword(s):  
Structural Investigation ◽  
Ion Beam ◽  
Aluminum Oxynitride ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

Solid State Interfacial Reactions Between Tic Thin Films and Ti3AI Substrates

1995 ◽  
Vol 398 ◽  
Author(s):  
Weimin Si ◽  
Michael Dudley ◽  
Pengxing Li ◽  
Renjie Wu
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Ion Beam ◽  
Depth Profiling ◽  
Solid State Reactions ◽  
Reaction Products ◽  
Ion Beam Sputtering ◽  
Thermodynamical Equilibrium ◽  
Beam Sputtering ◽  
Kinetics Of

ABSTRACTThe products and kinetics of solid state reactions between TiC and Ti3Al have been investigated using X-ray diffractometry (XRD) and Auger electron spectroscopy (AES) with Ar ion beam sputtering. Diffusion couples were prepared by sputtering TiC thin films onto polished Ti3AI substrates, and then isothermally annealed in vacuum in the temperature range of 800 to 1000°C for 0.25 to 2.25 hours. The thickness of the interfacial reaction layer was obtained from AES elemental concentration depth profiling, while the reaction products were identified from XRD spectra. In the TiC/Ti3Al system, the reaction product was primarily P(Ti3AlC) phase. The growth-rate of the reaction product was fitted to a parabolic growth law (dZ/dt = k1/Z) and the activation energy of the rate constant was about 36.16 kcal/mole. The reaction mechanism will be discussed on the basis of thermodynamical equilibrium in Ti-Al-C ternary system.

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