A New Technique for Depth Profiling on a Nanometer Scale

1995 ◽  
Vol 405 ◽  
Author(s):  
H. Schwenke ◽  
J. Knoth ◽  
R. Günther ◽  
G. Wiener ◽  
R. Bormann
Keyword(s):  
Ion Beam ◽  
Depth Profiling ◽  
Depth Resolution ◽  
Ion Source ◽  
New Technique ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering ◽  
A New Technique

AbstractA new technique is presented for the determination of concentration depth profiles. Surface atoms are sputtered by an ion beam and deposited on a clean silicon wafer. The wafer is rotated behind a slit in step with the sputtering progress. In this way the depth profile of the sample is transferred into a lateral distribution of the sputtered atoms on the target wafer. Subsequently the wafer is scanned by Total Reflection X-ray Fluorescence Spectrometry (TXRF) which is capable of detecting traces of metallic impurities on wafers down to 10-4 of an atomic monolayer. The sequence of ion-beam sputtering, deposition of the sputtered atoms and TXRF analysis results in an excellent depth resolution in the case of areal structures. Using an ion source of the Kaufmann type, an extrapolated perpendicular resolution better than 0.1 nm was obtained for a 1500 mm2 surface. For a surface area of 3 mm2 a depth resolution of 1 nm is expected. 1.4 nm was actually measured to be the width of a coherent Ti/Al-interface within a layered structure.

Influence of N2 Proportion on Mechanical Properties of SiCN Thin Films Prepared by DIBSD

2010 ◽  
Vol 97-101 ◽  
pp. 1243-1247 ◽  
Author(s):  
Bo Hong ◽  
Xue Mei Wu ◽  
Lan Jian Zhuge ◽  
Zhao Feng Wu ◽  
Fei Zhou
Keyword(s):  
Mechanical Properties ◽  
Ion Beam ◽  
Ion Source ◽  
Laser Raman Spectroscopy ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Laser Raman ◽  
Beam Sputtering ◽  
Sicn Thin Films ◽  
Dual Ion Beam Sputtering

Amorphous silicon carbide nitride (SiCN) films have been deposited in a dual ion beam sputtering deposition (DIBSD) using a SiC target. Films with various compositions were obtained by changing the nitrogen and argon gas ratio in the assisted ion source. Mechanical properties of the SiCN films were evaluated by Nano-indentation in N2 ambient. Surface morphology of the films was characterized by an Atomic Force Microscope (AFM). The microstructure and chemical bonding correlating with behavior of the films were studied by a Fourier transform infrared spectroscopy (FTIR) and a laser Raman spectroscopy. The results show that N2 proportion in the assisted ion source has a great effect on the structure and properties of the films and the mechanism was discussed in brief.

Study on the Surface Quality of Al2O3 Nano-Films by Ion Beam Sputtering Deposition

2011 ◽  
Vol 148-149 ◽  
pp. 54-57
Author(s):  
Xiao Ping Lin ◽  
Yun Dong ◽  
Lian Wei Yang
Keyword(s):  
Surface Quality ◽  
Ion Beam ◽  
Three Dimensional ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Atomic Force ◽  
Beam Sputtering ◽  
Dimensional Growth ◽  
Different Thickness

The Al2O3 nano-films of different thicknesses (1~100nm) were successfully deposited on the monocrystalline Si surface by using ion beam sputtering deposition. The surface topography and the component of nano-films with different thickness were analyzed. The quality of the surface of nano-films was systematically studied. When the films’ thickness increase, the studies by atomic force microscope (AFM), X-ray photoelectron spectrum（XPS） show that the gathering grain continually grows up and transits from acerose cellula by two-dimensional growth to globularity by three-dimensional growth. The elements O, Al and Si were found on the surface of Al2O3 nano-films. With the thickness of the films increasing, the content of Al gradually increases and the intensity peak of Si wears off, the surface quality of the deposited films is ceaselessly improved

Formation of the crystalline β-C3N4 phase by dual ion beam sputtering deposition

2007 ◽  
Vol 61 (14-15) ◽  
pp. 2855-2858 ◽  
Author(s):  
J.P. Rivière ◽  
D. Texier ◽  
J. Delafond ◽  
M. Jaouen ◽  
E.L. Mathé ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering

Microstructure and Properties of TiAlN/AlN Composite Film Deposited on Cam’s Profile by Ion Beam Sputtering Technique

2010 ◽  
Vol 443 ◽  
pp. 465-468
Author(s):  
Pei Quan Guo ◽  
Shou Ren Wang ◽  
Huan Yong Cui
Keyword(s):  
Composite Film ◽  
Ion Beam ◽  
Temperature Phase ◽  
Ion Beam Sputtering ◽  
Shape Accuracy ◽  
Tem Analysis ◽  
Sputtering Deposition ◽  
Microstructure And Properties ◽  
Operation Temperature ◽  
Beam Sputtering

The study reports a new surface formation technology during manufacturing process of parallel indexing cam mechanism, ion beam sputtering deposition, in which the operation temperature can be controlled below the limitation of phases exchanging or at room temperature. Phase exchanging deformation can be avoided and the shape accuracy and dimension accuracy can be improved compared with surface quenching process. The microstructure and properties of TiAlN/AlN composite film deposited on the profile surface of cam (made of 45 steel) by ion beam sputtering deposition were discussed. X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscope (TEM) analysis has been used to characterize film’s microstructure and properties. The micro-hardness and adherence grade were tested.

Ultra-low stress high reflective film by dual-ion-beam sputtering deposition

2021 ◽  
Vol 61 (03) ◽  
Author(s):  
Jinlin Bai ◽  
Huasong Liu ◽  
Yugang Jiang ◽  
Lishuan Wang ◽  
Xiao Yang ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering

High Resolution FIB as a General Materials Science Tool

1998 ◽  
Vol 4 (S2) ◽  
pp. 492-493 ◽  
Author(s):  
M.W. Phaneuf ◽  
J. Li ◽  
T. Malis
Keyword(s):  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Materials Science ◽  
Ion Beam ◽  
General Purpose ◽  
Ion Source ◽  
Specimen Preparation ◽  
Ion Beam Sputtering ◽  
Imaging Characteristics ◽  
Beam Sputtering

Focused Ion Beam or FIB systems have been used in integrated circuit production for some time. The ability to combine rapid, precision focused ion beam sputtering or gas-assisted ion etching with focused ion beam deposition allows for rapid-prototyping of circuit modifications and failure analysis of defects even if they are buried deep within the chip's architecture. Inevitably, creative TEM researchers reasoned that a FIB could be used to produce site specific parallel-sided, electron transparent regions, thus bringing about the rather unique situation wherein the specimen preparation device often was worth as much as the TEM itself.More recently, FIB manufacturers have concentrated on improving the resolution and imaging characteristics of these instruments, resulting in a more general-purpose characterization tool. The Micrion 2500 FIB system used in this study is capable of 4 nm imaging resolution using either secondary electron or secondary ions, both generated by a 50 kV liquid metal gallium ion source.

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