High Dose Implantation of Nickel into Silicon

1985 ◽  
Vol 54 ◽  
Author(s):  
G. J. Campisi ◽  
H. B. DIETRICH ◽  
M. Delfino ◽  
D. K. Sadana
Keyword(s):  
Electron Microscopy ◽  
Solid Phase ◽  
Ion Beam ◽  
Depth Profiling ◽  
Silicon Wafers ◽  
High Dose ◽  
Ion Beam Sputtering ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Beam Sputtering

ABSTRACTSeveral silicon wafers were implanted with 58Ni+ at an energy of 170 keV and a current density of 12 μA cm-2 to doses between 5 × 1015 and 1.8 × 1018 ions cm-2. The substrates were phosphorus doped n-type <100> Czochralski grown silicon wafers. The wafers were water cooled during implantation and the surface temperatures was monitored with an infrared pyrometer and controlled to < 70°C. Samples were subsequently furnace annealed at 900°C for 30 min in nitrogen. The as-implanted and annealed samples were analyzed using cross-sectional transmission electron microscopy (XTEM), Rutherford backscattering (RBS) spectroscopy, spreading resistance depth profiling (SRP), and scanning electron microscopy (SEM). Micro-crystallites of NiSi2 (2–5nm) buried within an amorphous matrix formed during the 1.5 × 1017 ions cm-2 dose implantation. For higher doses above 3 × 1017 Ni+ cm-2, ion beam sputtering occurred. After annealing, rapid diffusion of nickel and solid-phase recrystallization of the amorphous regions occurred.

TEM Study of Co/Pd and Co/Au Multilayers

1993 ◽  
Vol 51 ◽  
pp. 1036-1037
Author(s):  
A.E.M. De Veirman ◽  
F.J.G. Hakkens ◽  
W.M.J. Coene ◽  
F.J.A. den Broeder
Keyword(s):  
Magnetic Anisotropy ◽  
Ion Beam ◽  
Perpendicular Magnetic Anisotropy ◽  
Optical Recording ◽  
Magnetic Multilayer ◽  
Ion Beam Sputtering ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
Substrate Temperatures

There is currently great interest in magnetic multilayer (ML) thin films (see e.g.), because they display some interesting magnetic properties. Co/Pd and Co/Au ML systems exhibit perpendicular magnetic anisotropy below certain Co layer thicknesses, which makes them candidates for applications in the field of magneto-optical recording. It has been found that the magnetic anisotropy of a particular system strongly depends on the preparation method (vapour deposition, sputtering, ion beam sputtering) as well as on the substrate, underlayer and deposition temperature. In order to get a better understanding of the correlation between microstructure and properties a thorough cross-sectional transmission electron microscopy (XTEM) study of vapour deposited Co/Pd and Co/Au (111) MLs was undertaken (for more detailed results see ref.).The Co/Pd films (with fixed Pd thickness of 2.2 nm) were deposited on mica substrates at substrate temperatures Ts of 20°C and 200°C, after prior deposition of a 100 nm Pd underlayer at 450°C.

Effects of argon ion sputtering on zirconium and titanium

1992 ◽  
Vol 50 (1) ◽  
pp. 396-397
Author(s):  
G.J.C. Carpenter ◽  
J.A. Jackman ◽  
J. McCaffrey
Keyword(s):  
Electron Microscopy ◽  
Ion Beam ◽  
Thin Foil ◽  
Atomic Scale ◽  
Ion Sputtering ◽  
Ion Beam Sputtering ◽  
Thin Foils ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
Argon Ion

Argon ion sputtering is widely used in the final thinning stage for the preparation of thin foils for transmission electron microscopy. During a recent study of a titanium alloy, we observed that ion-beam thinning resulted in specimens that appeared in the electron microscope to have become severely damaged. Similar microstructures had been observed previously in zirconium, thinned in this manner. Because ion-beam sputtering takes place on the atomic scale, it seemed unlikely that gross distortion of a thin foil could have been caused directly by the sputtering process. A more detailed study has therefore been made of this phenomenon.

Microstructure of polycrystalline near epitaxial (100) and (111) pyrochlore on A (100) MgO Substrate

1990 ◽  
Vol 48 (4) ◽  
pp. 1062-1063
Author(s):  
Shang Hsien Rou
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
Physical Phenomena ◽  
Mgo Substrate

New and interesting physical phenomena are being observed via thin film depositions using a variety of processing techniques in different material systems. The present study describes Pb-Zr-Ti-O pyrochlore thin films which were deposited onto (100) MgO substrates using an ion beam sputtering technique. These films are of interest because of their unique microstructure which may provide valuable information in better understanding the epitaxial growth of thin films. Characterization were performed using conventional transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). Special TEM sample preparation procedures have been developed, which will be reported elsewhere.The as-deposited pyrochlore thin film is near epitaxial and is oriented with both (100) and (111) parallel to the (100) of the MgO substrate. Figure 1(a) shows the selected area diffraction pattern (SADP) of the pyrochlore thin film taken parallel to the [100] zone axis of the substrate.

Investigation of YSZ Thin Films on Silicon Wafer and NiO/YSZ Deposited by Ion Beam Sputtering Deposition (IBSD)

2007 ◽  
Vol 336-338 ◽  
pp. 1788-1790
Author(s):  
Yu Ju Chen ◽  
Wen Cheng J. Wei
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
Sputtering Deposition ◽  
X Ray ◽  
Crystal Growth Process ◽  
Transmission Electron ◽  
Beam Sputtering

Ion-beam sputtering deposition is a physical deposited method which uses accelerated ionbeam to sputter oxide or metal targets, and deposits atoms on substrate. Thin films of yttrium-stabilized zirconia (YSZ) were deposited on Si (100) wafer and NiO/YSZ plate. Scanning electron microscopy and transmission electron microscopy with EDS were employed to study the microstructural and chemically stoichiometric results of the films and the crystal growth process by various heat treatments. X-ray diffraction was also used to analysis crystalline phase of the YSZ films. The influence of different targets, substrates deposited efficiency and the properties of the film will be presented and discussed.

Structural Investigation of the Silver—Polyimide Interface by Cross—Sectional Ten and Ion—Beam Sputtering

1990 ◽  
Vol 203 ◽  
Author(s):  
A. Foitzik ◽  
F. Faupel
Keyword(s):  
Structural Investigation ◽  
Elevated Temperatures ◽  
Ion Beam ◽  
Depth Profiling ◽  
Ion Beam Sputtering ◽  
Radiotracer Technique ◽  
Cross Sectional ◽  
Ag Particles ◽  
Beam Sputtering ◽  
Ag Clusters

ABSTRACTWhen metals are deposited on polymers at low rates and elevated temperatures extended and non—uniform interfaces may form, the structural investigation of which requiresspecial techniques. In this paper the morphology of the silver—PMDA—ODA boundary formed during vapor deposition of the metal at 360 ºC has been investigated by means of cross—section TEM and a radiotracer technique in combination with ion—beam sputtering (IBS) for depth profiling. Ag was found to form clusters at the interface, but nearly spherical Ag particles up to diameters as large as 28 nm were also observed within the bulk of the polymer. The formation of Ag clusters is also reflected in the depth profiles, which, in addition, provide direct evidence for the diffusion o; singel Ag atoms deep into the polyimide. Diffusivities in the range of 10–21 – 10–18 m/s were determined for 300 ºC< T < 400 ºC. The Arrhenius plot is curved in accordance with a free—volume mechanism of diffusion. Cross—sectional TEM and low—energyIBS—depth profiling turned out to be an ideal combination for the investigation of extended metal—polymer interfaces.

scholarly journals Structural Transition in Cu/Fe Multilayered Thin Films

1996 ◽  
Vol 441 ◽  
Author(s):  
Tai D. Nguyen ◽  
Alison Chaiken ◽  
Troy W. Barbee
Keyword(s):  
Layer Thickness ◽  
Ion Beam ◽  
Microstructural Development ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
Bcc Structure

AbstractMicrostructural development of Fe and Cu in Cu/Fe multilayers of layer thickness 1.5–10 nm prepared on Si, Ge, and MgO substrates by ion beam sputtering has been studied using x-ray diffraction and cross-sectional transmission electron microscopy (TEM). High-angle x-ray results show an fcc Cu structure and a distorted bcc structure in the Fe layers at 5 nm-layer-thickness and smaller, and bcc Fe (110) and fcc Cu (111) peaks in the 10 nm-layer-thickness samples. Lowangle x-ray diffraction indicates that the layers in the samples grown on MgO substrates have a more uniform and smooth layered structure than the multilayers grown on Si and Ge substrates, which results from larger grains in the MgO substrate samples for the same layer thickness. Relationships among growth, microstructure, and interfaces with layer thickness are discussed.

The Effect of Xe Ion Beam Treatment on the Interaction Between Gold and GaAs

1992 ◽  
Vol 260 ◽  
Author(s):  
B. Pécz ◽  
G. Radnóczi ◽  
Zs. J. Horváth ◽  
P. B. Barna ◽  
Erika Jároli ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Ion Beam ◽  
High Resolution Electron Microscopy ◽  
Gaas Layer ◽  
High Dose ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Ion Beam Treatment ◽  
Defective Area

ABSTRACTThe effect of the defective nature of the substrate on the alloying behaviour of Xe implanted Au(55 ran)/n-GaAs system was studied using cross sectional transmission electron microscopy.Low dose Xe implantation (700 keV, 1*1014 ions/cm2) caused the formation of about SO nm thick polycrystalline region of GaAs beneath the gold layer. Annealing the implanted sample at 450°C gold diffused through the polycrystalline GaAs region and formed large pits of Au(Ga) solid solution in the defective area of GaAs having stacking faults and twins. The formation of a regrown GaAs covering layer was observed on the top of the reacted metallization simultaneously.High dose implantation of Xe++ ions resulted in the formation of amorphous GaAs layer with a thickness of about 750 nm. Twinned regions of GaAs were observed at the amorphous - crystalline GaAs interface by high resolution electron microscopy. Ion beam caused phase transition was observed in this sample. The amorphous GaAs region recrystallized to single crystalline GaAs due to annealing at 400°C.

Sign in / Sign up

Export Citation Format

Share Document