An apparatus for ion‐beam sputtering and its application to high‐resolution radiotracer depth profiling of diffusion samples

1992 ◽  
Vol 10 (1) ◽  
pp. 92-97 ◽  
Author(s):  
F. Faupel ◽  
P. W. Hüppe ◽  
K. Rätzke ◽  
R. Willecke ◽  
Th. Hehenkamp
Keyword(s):  
High Resolution ◽  
Ion Beam ◽  
Depth Profiling ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

Ion Beam Sputtering for High Resolution Depth Profiling

2009 ◽  
Vol 15 (3) ◽  
pp. 216-219 ◽  
Author(s):  
Hee Jae Kang ◽  
Dae Won Moon ◽  
Hyung-Ik Lee
Keyword(s):  
High Resolution ◽  
Ion Beam ◽  
Depth Profiling ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

High Resolution Backscatter Electron (BSE) Imaging using the Autrata Modified YAG BSE Detector: Comparison of an In-lens Hitachi S-900 FESEM with the Below-the-Lens Hitachi S-4700 FESEM

2001 ◽  
Vol 7 (S2) ◽  
pp. 1046-1047
Author(s):  
Stanley L. Erlandsen ◽  
Ya Chen ◽  
Chris Frethem
Keyword(s):  
High Resolution ◽  
Colloidal Gold ◽  
Ion Beam ◽  
Beam Current ◽  
Backscatter Electron ◽  
Ion Beam Sputtering ◽  
Gold Particles ◽  
Lens Position ◽  
Beam Sputtering ◽  
Working Distance

To obtain high resolution backscatter electron (BSE) images in field emission SEM (FESEM), one must consider selection of accelerating voltage, beam current, working distance between the specimen and the backscatter detector (in-lens or below-the-lens position for the specimen), the type of BSE detector, and the type of metal used to coat the specimen to improve conductivity and signal collection [1]. A new generation of below-the-lens FESEM have been tested for BSE imaging on biological samples, but no information exists on whether or not high resolution imaging is possible. Here we report the comparison of detection of a colloidal gold standard (6, 12, 18 nm) by high resolution BSE imaging using Autrata-modified YAG detectors in an in-lens FESEM and in a below-the-lens FESEM.Standards were prepared by mixing colloidal gold particles of 6 nm, 12 nm, and 18 nm. The gold particles were attached via poly-l-lysine to glass chips and coated with <1 nm Pt by ion beam sputtering.

High-resolution field emission SEM of bulk biological samples: Relationship between different metal coatings, their thicknesses, and quality of backscatter electron versus secondary-electron imaging

1993 ◽  
Vol 51 ◽  
pp. 460-461
Author(s):  
Chris Frethem ◽  
Carol Wells ◽  
Vince Carlino ◽  
Stanley L. Erlandsen
Keyword(s):  
High Resolution ◽  
Biological Samples ◽  
Low Voltage ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Metal Coatings ◽  
Direct Exposure ◽  
Beam Sputtering ◽  
Electron Imaging

High resolution visualization of cell surfaces in bulk biological samples can be obtained by low voltage FESEM using either SE or BSE imaging methods and the preferred selection of low accelerating voltages (1-4 keV) has been based on theoretical considerations related to interaction volumes, electron charge, and potential radiation damage to the surface produced by direct exposure to the electron beam. Fine metal coatings (≤1 nm) produced by ion sputtering for high resolution FESEM imaging are used to minimize charging and to increase SE contrast as well as BSE topographical contrast.The purpose of this work was to investigate the relationship between the thickness of metal coatings produced by ion beam sputtering and the quality of imaging obtained by SE and BSE of biological samples. Cells of Proteus mirabilus were immunocytochemically labeled with 12 nm colloidal gold as previously described, fixed in glutaraldehyde followed by post-fixation in osmium, and critical point dried in CO2.

High Dose Implantation of Nickel into Silicon

1985 ◽  
Vol 54 ◽  
Author(s):  
G. J. Campisi ◽  
H. B. DIETRICH ◽  
M. Delfino ◽  
D. K. Sadana
Keyword(s):  
Electron Microscopy ◽  
Solid Phase ◽  
Ion Beam ◽  
Depth Profiling ◽  
Silicon Wafers ◽  
High Dose ◽  
Ion Beam Sputtering ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Beam Sputtering

ABSTRACTSeveral silicon wafers were implanted with 58Ni+ at an energy of 170 keV and a current density of 12 μA cm-2 to doses between 5 × 1015 and 1.8 × 1018 ions cm-2. The substrates were phosphorus doped n-type <100> Czochralski grown silicon wafers. The wafers were water cooled during implantation and the surface temperatures was monitored with an infrared pyrometer and controlled to < 70°C. Samples were subsequently furnace annealed at 900°C for 30 min in nitrogen. The as-implanted and annealed samples were analyzed using cross-sectional transmission electron microscopy (XTEM), Rutherford backscattering (RBS) spectroscopy, spreading resistance depth profiling (SRP), and scanning electron microscopy (SEM). Micro-crystallites of NiSi2 (2–5nm) buried within an amorphous matrix formed during the 1.5 × 1017 ions cm-2 dose implantation. For higher doses above 3 × 1017 Ni+ cm-2, ion beam sputtering occurred. After annealing, rapid diffusion of nickel and solid-phase recrystallization of the amorphous regions occurred.

Some applications of ion beam sputtering to high resolution electron microscopy

Micron (1969) ◽  
1977 ◽  
Vol 8 (3) ◽  
pp. 151-170 ◽  
Author(s):  
K. Hojou ◽  
T. Oikawa ◽  
K. Kanaya ◽  
T. Kimura ◽  
K. Adachi
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Ion Beam ◽  
High Resolution Electron Microscopy ◽  
Ion Beam Sputtering ◽  
Resolution Electron ◽  
Beam Sputtering
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