Anisotropic Etching of Heavily Doped Polysilicon by a Hot Cl2 Molecular Beam

1990 ◽  
Vol 201 ◽  
Author(s):  
T. Ono ◽  
S. Hiraoka ◽  
K. Suzuki
Keyword(s):  
Etch Rate ◽  
Molecular Beam ◽  
Anisotropic Etching ◽  
Free Jet ◽  
Etching Condition ◽  
Heavily Doped ◽  
Nitrogen Radical

AbstractAnisotropic etching of n+ poly-Si is achieved using a hot Cl2 molecular beam and a sidewall protection technique. A hot molecular beam is produced by a free jet expansion of a gas heated in a furnace. A nitrogen radical beam is used to prevent the sidewall etching. The etch rate of n+ poly-Si is 4.3 nm/min at the anisotropic etching condition.

Defects in Heavily-Doped MBE GaAs

1982 ◽  
Vol 40 ◽  
pp. 442-445
Author(s):  
C.B. Carter ◽  
D.M. DeSimone ◽  
T. Griem ◽  
C.E.C. Wood
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heavily Doped

Molecular-beam epitaxy (MBE) is potentially an extremely valuable tool for growing III-V compounds. The value of the technique results partly from the ease with which controlled layers of precisely determined composition can be grown, and partly from the ability that it provides for growing accurately doped layers.

Analysis of Defects in Heavily-Doped MBE-GaAs

1982 ◽  
Vol 14 ◽  
Author(s):  
C.B. Carter ◽  
D.M. Desimone ◽  
H.T. Griem ◽  
C.E.C. Wood
Keyword(s):  
Liquid Phase ◽  
Molecular Beam ◽  
Type Material ◽  
Grown Layer ◽  
Defect Clusters ◽  
Complex Defect ◽  
Heavily Doped ◽  
Rich Material ◽  
P Type ◽  
Very High

ABSTRACTGaAs Has Been Grown By Molecular-Beam Epitaxy (MBE) With Large Concentrations (∼1018CM−2) Of Sn, Si, Ge, And Mn As Dopants. The Heavily-Doped N-Type Material Has Been Found To Contain Regions Of A Very High Dislocation Density. An Analysis Of The Less Complex Defect Areas Shows That The Dislocations Originate In The MBE-Grown Layer. These Observations And Others On More Complex Defect Clusters Are Compared With Recent Studies Of Defects In Material Grown By Liquid Phase Epitaxy (LPE). The More Heavily Doped P-Type Material Contains Discs Of Mn-Rich Material At The Surface Of The MBEgrown Epilayer. Both The Structure And Composition Of These Regions Have Been Examined.

Translational freezing in free jet expansions, with special reference to molecular beam formation

1969 ◽  
Vol 47 (12) ◽  
pp. 2161-2165 ◽  
Author(s):  
Rodney L. LeRoy ◽  
Jacques M. Deckers
Keyword(s):  
Distribution Function ◽  
Transition Region ◽  
Molecular Beam ◽  
Collision Frequency ◽  
Collision Cross Section ◽  
Experimental Studies ◽  
Velocity Distribution Function ◽  
Free Jet ◽  
Beam Formation ◽  
Good Agreement

A theoretical model is described which can be used to calculate the velocity distribution function in the transition region of a free jet expansion. It makes use of a simple mechanism to account for the way in which collisions "perturb" the distribution function which would apply in the absence of collisions. The results are compared with experimental studies of argon beams isolated from free jet sources. If the collision frequency is calculated using a hard sphere collision cross section of (25 ± 5) Å2, good agreement with experimental beam intensity profiles is obtained. In the transition region computed values of the bulk mass velocity, and of the parallel and perpendicular temperatures, are intermediate between the values which would be found if the flow were collision-dominated or free molecular. In particular the perpendicular temperature varies slowly from a dependence on the −4/3 power of the distance from the source, approaching monotonically a −2 power dependence at large distances.

Effects of Additive Gas on SiO2 Etching

1992 ◽  
Vol 279 ◽  
Author(s):  
Yasuhiro Miyakawa ◽  
Jun Hashimoto ◽  
Naokatsu Ikegami ◽  
Jun Kanamori
Keyword(s):  
Integrated Circuit ◽  
Vertical Profile ◽  
Etch Rate ◽  
Critical Dimension ◽  
Key Technology ◽  
Precise Control ◽  
Heavily Doped ◽  
Etched Surface ◽  
Sio2 Etching

ABSTRACTPrecise control of critical dimension(CD) loss (defined as the length of the top of contact hole minus the bottom of resist in this paper) and etched profile of contact holes is a key technology in the fabrication of Ultra Large Scaled Integrated Circuit(ULSI). In case of fine contact hole etching, small CD loss and vertical profile is essential. We have found out that N2 addition to Ar/CHF3/CF4 sharpens etched profile with CD loss kept small. And N2 addition also increases etch rate without a heavy deterioration of selectivity of SiO2 versus heavily doped n-type poly cry stall ine Si(n+ poly Si). Mechanisms of changes in etching characteristics have been investigated and discussed with the emphasis on adlayer formed on etched surface.

Experimental and Numerical Study of Pentacene Molecular Beam Seeded in the Free Jet of Helium

2011 ◽  
Author(s):  
A. K. Rebrov ◽  
P. A. Skovorodko ◽  
T. Toccoli ◽  
M. Tonezzer ◽  
N. Coppedè ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Numerical Study ◽  
Free Jet

Characterization ofp‐type GaAs heavily doped with carbon grown by metalorganic molecular‐beam epitaxy

1988 ◽  
Vol 64 (8) ◽  
pp. 3975-3979 ◽  
Author(s):  
Koki Saito ◽  
Eisuke Tokumitsu ◽  
Takeshi Akatsuka ◽  
Motoya Miyauchi ◽  
Takumi Yamada ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Heavily Doped

scholarly journals Texturing of InP Surfaces for Device Applications

1992 ◽  
Vol 259 ◽  
Author(s):  
Sheila G. Bailey ◽  
Navid S. Fatemi ◽  
Geoffrey A. Landis
Keyword(s):  
Solar Cells ◽  
Optoelectronic Devices ◽  
Anisotropic Etching ◽  
Device Applications ◽  
Heavily Doped ◽  
Surface Reflectivity

ABSTRACTA unique process for texturing InP (100) wafers by anisotropic etching has been developed. The process produces irregular V-grooves on the surface, which reduce the surface reflectivity. The process does not require photolithography or masking. The etching characteristics depend on doping, with etching tending to proceed more rapidly on the more heavily doped samples. Reduced reflectivity surfaces formed using this process can be applied to solar cells, photodetectors, and other optoelectronic devices.

Photodiode properties of molecular beam epitaxial InSb on a heavily doped substrate

2014 ◽  
Vol 62 ◽  
pp. 143-146 ◽  
Author(s):  
Weiguo Sun ◽  
Huitao Fan ◽  
Zhenyu Peng ◽  
Liang Zhang ◽  
Xiaolei Zhang ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Heavily Doped
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