scholarly journals Texturing of InP Surfaces for Device Applications

1992 ◽  
Vol 259 ◽  
Author(s):  
Sheila G. Bailey ◽  
Navid S. Fatemi ◽  
Geoffrey A. Landis
Keyword(s):  
Solar Cells ◽  
Optoelectronic Devices ◽  
Anisotropic Etching ◽  
Device Applications ◽  
Heavily Doped ◽  
Surface Reflectivity

ABSTRACTA unique process for texturing InP (100) wafers by anisotropic etching has been developed. The process produces irregular V-grooves on the surface, which reduce the surface reflectivity. The process does not require photolithography or masking. The etching characteristics depend on doping, with etching tending to proceed more rapidly on the more heavily doped samples. Reduced reflectivity surfaces formed using this process can be applied to solar cells, photodetectors, and other optoelectronic devices.

scholarly journals Photostable and Uniform CH3NH3PbI3 Perovskite Film Prepared via Stoichiometric Modification and Solvent Engineering

Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 405
Author(s):  
Daocheng Hong ◽  
Mingyi Xie ◽  
Yuxi Tian
Keyword(s):  
Solar Cells ◽  
Optoelectronic Devices ◽  
Solvent Engineering ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Coverage Ratio ◽  
Fabrication Procedure ◽  
Fabrication Condition ◽  
Halide Perovskites ◽  
Photoluminescence Efficiency

Solution-processed organometal halide perovskites (OMHPs) have been widely used in optoelectronic devices, and have exhibited brilliant performance. One of their generally recognized advantages is their easy fabrication procedure. However, such a procedure also brings uncertainty about the opto-electric properties of the final samples and devices, including morphology, stability, coverage ratio, and defect concentration. Normally, one needs to find a balanced condition, because there is a competitive relation between these parameters. In this work, we fabricated CH3NH3PbI3 films by carefully changing the ratio of the PbI2 to CH3NH3I, and found that the stoichiometric and solvent engineering not only determined the photoluminescence efficiency and defects in the materials, but also affected the photostability, morphology, and coverage ratio. Combining solvent engineering and the substitution of PbI2 by Pb(Ac)2, we obtained an optimized fabrication condition, providing uniform CH3NH3PbI3 films with both high photoluminescence efficiency and high photostability under either I-rich or Pb-rich conditions. These results provide an optimized fabrication procedure for CH3NH3PbI3 and other OMHP films, which is crucial for the performance of perovskite-based solar cells and light emitting devices.

scholarly journals MXenes for future nanophotonic device applications

Nanophotonics ◽  
2020 ◽  
Vol 9 (7) ◽  
pp. 1831-1853
Author(s):  
Jaeho Jeon ◽  
Yajie Yang ◽  
Haeju Choi ◽  
Jin-Hong Park ◽  
Byoung Hun Lee ◽  
...  
Keyword(s):  
Solar Cells ◽  
Transition Metal ◽  
Wide Spectrum ◽  
Building Blocks ◽  
Optoelectronic Device ◽  
High Yield ◽  
Saturable Absorption ◽  
Nanophotonic Device ◽  
Wide Range ◽  
Device Applications

AbstractTwo-dimensional (2D) layers of transition metal carbides, nitrides, or carbonitrides, collectively referred to as MXenes, are considered as the new family of 2D materials for the development of functional building blocks for optoelectronic and photonic device applications. Their advantages are based on their unique and tunable electronic and optical properties, which depend on the modulation of transition metal elements or surface functional groups. In this paper, we have presented a comprehensive review of MXenes to suggest an insightful perspective on future nanophotonic and optoelectronic device applications based on advanced synthesis processes and theoretically predicted or experimentally verified material properties. Recently developed optoelectronic and photonic devices, such as photodetectors, solar cells, fiber lasers, and light-emitting diodes are summarized in this review. Wide-spectrum photodetection with high photoresponsivity, high-yield solar cells, and effective saturable absorption were achieved by exploiting different MXenes. Further, the great potential of MXenes as an electrode material is predicted with a controllable work function in a wide range (1.6–8 eV) and high conductivity (~104 S/cm), and their potential as active channel material by generating a tunable energy bandgap is likewise shown. MXene can provide new functional building blocks for future generation nanophotonic device applications.

scholarly journals Recent Advances and Challenges in Halide Perovskite Crystals in Optoelectronic Devices from Solar Cells to Other Applications

Crystals ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 39
Author(s):  
Seunghyun Rhee ◽  
Kunsik An ◽  
Kyung-Tae Kang
Keyword(s):  
Solar Cells ◽  
Optoelectronic Devices ◽  
Charge Carrier Mobility ◽  
Light Emitting ◽  
Fundamental Properties ◽  
Perovskite Materials ◽  
Hybrid Perovskite ◽  
Band Position ◽  
Different Characteristics ◽  
High Charge Carrier Mobility

Organic-inorganic hybrid perovskite materials have attracted tremendous attention as a key material in various optoelectronic devices. Distinctive optoelectronic properties, such as a tunable energy band position, long carrier diffusion lengths, and high charge carrier mobility, have allowed rapid progress in various perovskite-based optoelectronic devices (solar cells, photodetectors, light emitting diodes (LEDs), and lasers). Interestingly, the developments of each field are based on different characteristics of perovskite materials which are suitable for their own applications. In this review, we provide the fundamental properties of perovskite materials and categorize the usages in various optoelectronic applications. In addition, the prerequisite factors for those applications are suggested to understand the recent progress of perovskite-based optoelectronic devices and the challenges that need to be solved for commercialization.

1.7 eV MgCdTe double-heterostructure solar cells for tandem device applications

2016 ◽  
Author(s):  
Calli M. Campbell ◽  
Yuan Zhao ◽  
Ernesto Suarez ◽  
Mathieu Boccard ◽  
Xin-Hao Zhao ◽  
...  
Keyword(s):  
Solar Cells ◽  
Double Heterostructure ◽  
Device Applications

Recent Progress in III-Nitride Tunnel Junction-Based Optoelectronics

2019 ◽  
Vol 28 (01n02) ◽  
pp. 1940012
Author(s):  
Zane Jamal-Eddine ◽  
Yuewei Zhang ◽  
Siddharth Rajan
Keyword(s):  
Tunnel Junction ◽  
Recent Progress ◽  
Tunnel Junctions ◽  
Optoelectronic Devices ◽  
Material System ◽  
Novel Device ◽  
Unique Material ◽  
Material Systems ◽  
Device Applications ◽  
Commercial Device

Tunnel junctions have garnered much interest from the III-Nitride optoelectronic research community within recent years. Tunnel junctions have seen applications in several material systems with relatively narrow bandgaps as compared to the III-Nitrides. Although they were initially dismissed as ineffective for commercial device applications due to high voltage penalty and on resistance owed to the wide bandgap nature of the III-Nitride material systems, recent development in the field has warranted further study of such tunnel junction enabled devices. They are of particular interest for applications in III-Nitride optoelectronic devices in which they can be used to enable novel device designs which could potentially address some of the most challenging physical obstacles presented with this unique material system. In this work we review the recent progress made on the study of III-Nitride tunnel junction-based optoelectronic devices and the challenges which are still faced in the field of study today.

scholarly journals Recent Progress in Carbon-Based Buffer Layers for Polymer Solar Cells

Polymers ◽  
2019 ◽  
Vol 11 (11) ◽  
pp. 1858 ◽  
Author(s):  
Nguyen ◽  
Nguyen ◽  
Nguyen ◽  
Le ◽  
Vo ◽  
...  
Keyword(s):  
Solar Cells ◽  
Electron Transport ◽  
Carbon Nitride ◽  
High Efficiency ◽  
Polymer Solar Cells ◽  
Optoelectronic Devices ◽  
Carbon Quantum Dots ◽  
Buffer Layers ◽  
Future Directions ◽  
Carbon Based

Carbon-based materials are promising candidates as charge transport layers in various optoelectronic devices and have been applied to enhance the performance and stability of such devices. In this paper, we provide an overview of the most contemporary strategies that use carbon-based materials including graphene, graphene oxide, carbon nanotubes, carbon quantum dots, and graphitic carbon nitride as buffer layers in polymer solar cells (PSCs). The crucial parameters that regulate the performance of carbon-based buffer layers are highlighted and discussed in detail. Furthermore, the performances of recently developed carbon-based materials as hole and electron transport layers in PSCs compared with those of commercially available hole/electron transport layers are evaluated. Finally, we elaborate on the remaining challenges and future directions for the development of carbon-based buffer layers to achieve high-efficiency and high-stability PSCs.

Anisotropic Etching of Heavily Doped Polysilicon by a Hot Cl2 Molecular Beam

1990 ◽  
Vol 201 ◽  
Author(s):  
T. Ono ◽  
S. Hiraoka ◽  
K. Suzuki
Keyword(s):  
Etch Rate ◽  
Molecular Beam ◽  
Anisotropic Etching ◽  
Free Jet ◽  
Etching Condition ◽  
Heavily Doped ◽  
Nitrogen Radical

AbstractAnisotropic etching of n+ poly-Si is achieved using a hot Cl2 molecular beam and a sidewall protection technique. A hot molecular beam is produced by a free jet expansion of a gas heated in a furnace. A nitrogen radical beam is used to prevent the sidewall etching. The etch rate of n+ poly-Si is 4.3 nm/min at the anisotropic etching condition.

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