Hydrogenated Silicon Films Prepared by Remote Plasma CVD

1990 ◽  
Vol 192 ◽  
Author(s):  
Sung Chul Kim ◽  
Seung Kyu Lee ◽  
Sung Mo Soe ◽  
Sung Ok Koh ◽  
Sung Shil Ihm ◽  
...  
Keyword(s):  
Chemical Vapour ◽  
Substrate Bias ◽  
Rf Power ◽  
Remote Plasma ◽  
Substrate Bias Voltage ◽  
Hydrogenated Silicon ◽  
Gas Concentration ◽  
Hydrogen Dilution ◽  
Plasma Chemical Vapour Deposition

ABSTRACTWe have studied the improvement of the quality of undoped a-Si:H deposited by remote-plasma chemical vapour deposition. The effects of reactant gas concentration, rf power, substrate bias voltage on the electrical and optical properties have been investigated. Some hydrogen dilution of si lane improves the photoeletric property and a high rf power gives rise to the defect creation due to the ion bombardment on the growing surface. The positive substrate bias improves the quality of undoped a-Si:H.

Emission spectroscopy as a noninvasive probe for process control during radio frequency sputter deposition of PbTe

1989 ◽  
Vol 67 (4) ◽  
pp. 287-293 ◽  
Author(s):  
J. G. Cook ◽  
M. S. Aouadi ◽  
S. R. Das
Keyword(s):  
Electron Temperature ◽  
Emission Spectroscopy ◽  
Emission Spectra ◽  
Sputter Deposition ◽  
Emission Lines ◽  
Substrate Bias ◽  
Rf Power ◽  
Magnetron Discharge ◽  
Substrate Bias Voltage ◽  
Pressure Changes

An rf magnetron discharge used to sputter PbTe in Ar is analyzed using emission spectroscopy. The intensity (I) of the strong Pb, Te, and Ar emission lines is determined near the target and near the substrate as the rf power or gas pressure is varied. It is shown that as the rf power is varied at pressures below 0.5 Pa, the electron temperature is not affected, so that the sputtered atom density NPb is proportional to IPb/IAr. The electron temperature is, however, sensitive to pressure changes. Application of a substrate bias voltage has a large effect on the emission spectra which are not understood.

Growth of Polycrystalline Silicon films at low Temperature by Remote Plasma CVD

1992 ◽  
Vol 283 ◽  
Author(s):  
Sung Chul Kim ◽  
Kyu Chang Park ◽  
Sung Ki Kim ◽  
Jung Mok Jun ◽  
Jin Jang
Keyword(s):  
Substrate Temperature ◽  
Polycrystalline Silicon ◽  
Volume Fraction ◽  
Power Level ◽  
Chemical Vapour ◽  
Rf Power ◽  
Crystalline Volume Fraction ◽  
Remote Plasma ◽  
Chemical Vapour Deposition Technique ◽  
Polycrystalline Silicon Films

ABSTRACTWe studied the growth of polycrystalline silicon by using remote plasma chemical vapour deposition technique. The effects of RF power and the substrate temperature on the structural properties have been investigated. With increasing the RF power, the crystalline volume fraction and the grain size increase up to 100W, but decrease for the further increase in power level. We obtained the poly-Si with the crystalline volume fraction of about 74 at.% at the substrate temperature of 330°C.

Optical absorption in PECVD deposited thin hydrogenated silicon in light of ordering effects

Open Physics ◽  
2009 ◽  
Vol 7 (2) ◽  
Author(s):  
Jarmila Müllerová ◽  
Veronika Vavruňková ◽  
Pavel Å utta
Keyword(s):  
Chemical Vapour ◽  
Optical Transmittance ◽  
Band Gap Energy ◽  
Absorption Coefficients ◽  
Hydrogenated Silicon ◽  
Transmittance Spectra ◽  
Silicon Thin Films ◽  
Hydrogen Dilution ◽  
Ordering Effects ◽  
Amorphous Hydrogenated Silicon

AbstractWe report results obtained from measurements of optical transmittance spectra carried out on a series of silicon thin films deposited by plasma-enhanced chemical vapour deposition (PECVD) from silane diluted with hydrogen. Hydrogen dilution of silane results in an inhomogeneous growth during which the material evolves from amorphous hydrogenated silicon (a-Si:H) to microcrystalline hydrogenated silicon (µc-Si:H). Spectral refractive indices and absorption coefficients were determined from transmittance spectra. The spectral absorption coefficients were used to determine the Tauc optical band gap energy, the B factor of the Tauc plots, E 04 (energy at which the absorption coefficient is equal to 104 cm−1), and the Urbach energy as a function of the hydrogen dilution. The results were correlated with microstructure, namely volume fractions of the amorphous and crystalline phase with voids, and with the grain size.

Measurements of ion energy and flux during ion-assisted deposition of CdTe epilayers by rf magnetron-sputtering

1991 ◽  
Vol 69 (3-4) ◽  
pp. 236-240 ◽  
Author(s):  
J. G. Cook ◽  
S. R. Das
Keyword(s):  
Voltage Drop ◽  
Rf Magnetron Sputtering ◽  
Plasma Potential ◽  
Crystallographic Structure ◽  
Substrate Bias ◽  
Rf Power ◽  
Substrate Bias Voltage ◽  
Ion Energy ◽  
Discharge Parameters ◽  
Rf Sputter Deposition

Previously we found that the crystallographic structure of CdTe films deposited by means of ion-assisted magnetron rf sputter deposition was very sensitive to the substrate bias voltage and temperature (S. R. Das et al. Can. J. Phys. 65, 864 (1987)). In this work, the ion energy and flux incident on the growing film were determined by means of rf-compensated Langmuir diagnostics. It was found that control of the film phase in the previous work was achieved largely by adjustments of ion energy and substrate temperature; the ion flux changed relatively little. The work is extended to a study of the discharge parameters as a function of rf power, using a CdTe target. The ion and electron densities are found to be sensitive to rf power, whereas the plasma potential Vp and the electron temperature are not. A well-known equation for Vp in terms of the positive excursions of the target voltage gives a poor estimate for Vp because of the voltage drop across the rf impedance of the target disc.

Microcrystal Si Films Prepared by Remote Plasma CVD

1989 ◽  
Vol 164 ◽  
Author(s):  
Sung Chul Kim ◽  
Jung Tae Hwang ◽  
Seung Kyu Lee ◽  
Chang Young Jung ◽  
Sung Moo Soe ◽  
...  
Keyword(s):  
Rf Power ◽  
Plasma Cvd ◽  
Remote Plasma ◽  
Temperature Conductivity ◽  
Room Temperature Conductivity ◽  
Hydrogen Dilution ◽  
Power Yield ◽  
Si Films ◽  
Hydrogen Radicals ◽  
P Type

AbstractThe effects of deposition temperature, rf power and hydrogen dilution ratio on the growth, structure and transport of p-type microcrystal(μc-) Si films deposited by remote plasma CVD have been investigated. While low substrate temperature and low rf power yield small grain sizes, high temperature and high rf power tend to supress the growth of grains. The etching of Si by hydrogen radicals plays an important role to grow μc-Si, but excess etching supresses the growth of crystallites. We obtained 400 A of grain size and 3.5 S/cm of room temperature conductivity for p-type μ-Si.

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