Emission spectroscopy as a noninvasive probe for process control during radio frequency sputter deposition of PbTe

1989 ◽  
Vol 67 (4) ◽  
pp. 287-293 ◽  
Author(s):  
J. G. Cook ◽  
M. S. Aouadi ◽  
S. R. Das
Keyword(s):  
Electron Temperature ◽  
Emission Spectroscopy ◽  
Emission Spectra ◽  
Sputter Deposition ◽  
Emission Lines ◽  
Substrate Bias ◽  
Rf Power ◽  
Magnetron Discharge ◽  
Substrate Bias Voltage ◽  
Pressure Changes

An rf magnetron discharge used to sputter PbTe in Ar is analyzed using emission spectroscopy. The intensity (I) of the strong Pb, Te, and Ar emission lines is determined near the target and near the substrate as the rf power or gas pressure is varied. It is shown that as the rf power is varied at pressures below 0.5 Pa, the electron temperature is not affected, so that the sputtered atom density NPb is proportional to IPb/IAr. The electron temperature is, however, sensitive to pressure changes. Application of a substrate bias voltage has a large effect on the emission spectra which are not understood.

Measurements of ion energy and flux during ion-assisted deposition of CdTe epilayers by rf magnetron-sputtering

1991 ◽  
Vol 69 (3-4) ◽  
pp. 236-240 ◽  
Author(s):  
J. G. Cook ◽  
S. R. Das
Keyword(s):  
Voltage Drop ◽  
Rf Magnetron Sputtering ◽  
Plasma Potential ◽  
Crystallographic Structure ◽  
Substrate Bias ◽  
Rf Power ◽  
Substrate Bias Voltage ◽  
Ion Energy ◽  
Discharge Parameters ◽  
Rf Sputter Deposition

Previously we found that the crystallographic structure of CdTe films deposited by means of ion-assisted magnetron rf sputter deposition was very sensitive to the substrate bias voltage and temperature (S. R. Das et al. Can. J. Phys. 65, 864 (1987)). In this work, the ion energy and flux incident on the growing film were determined by means of rf-compensated Langmuir diagnostics. It was found that control of the film phase in the previous work was achieved largely by adjustments of ion energy and substrate temperature; the ion flux changed relatively little. The work is extended to a study of the discharge parameters as a function of rf power, using a CdTe target. The ion and electron densities are found to be sensitive to rf power, whereas the plasma potential Vp and the electron temperature are not. A well-known equation for Vp in terms of the positive excursions of the target voltage gives a poor estimate for Vp because of the voltage drop across the rf impedance of the target disc.

Hydrogenated Silicon Films Prepared by Remote Plasma CVD

1990 ◽  
Vol 192 ◽  
Author(s):  
Sung Chul Kim ◽  
Seung Kyu Lee ◽  
Sung Mo Soe ◽  
Sung Ok Koh ◽  
Sung Shil Ihm ◽  
...  
Keyword(s):  
Chemical Vapour ◽  
Substrate Bias ◽  
Rf Power ◽  
Remote Plasma ◽  
Substrate Bias Voltage ◽  
Hydrogenated Silicon ◽  
Gas Concentration ◽  
Hydrogen Dilution ◽  
Plasma Chemical Vapour Deposition

ABSTRACTWe have studied the improvement of the quality of undoped a-Si:H deposited by remote-plasma chemical vapour deposition. The effects of reactant gas concentration, rf power, substrate bias voltage on the electrical and optical properties have been investigated. Some hydrogen dilution of si lane improves the photoeletric property and a high rf power gives rise to the defect creation due to the ion bombardment on the growing surface. The positive substrate bias improves the quality of undoped a-Si:H.

scholarly journals Measurement of the electron temperature in dielectric barrier discharge by line-ratio method of optical emission spectroscopy

2015 ◽  
Vol 3 ◽  
pp. 1-6 ◽  
Author(s):  
R.B. Tyata ◽  
D.P. Subedi ◽  
C.S. Wong
Keyword(s):  
Electron Temperature ◽  
Dielectric Barrier Discharge ◽  
Atmospheric Pressure ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Barrier Discharge ◽  
Emission Spectra ◽  
Optical Emission ◽  
Ratio Method ◽  
Dielectric Barrier

In this paper, experimental results of atmospheric pressure dielectric barrier discharge (DBD) produced in air and nitrogen gas have been presented. The discharge was generated using a high voltage (0-20 kV) power supply operating at 10-30 kHz in hemispherical electrodes system with dielectric barrier of glass between the electrodes. Optical emission spectroscopy was used for the characterization of the discharge produced at atmospheric pressure. The emission spectra in the range of 200 nm to 450 nm have been analyzed to estimate the electron temperature by line intensity ratio method. The results show that the electron temperature is about 0.70 eV in air and 0.71 in nitrogen.

scholarly journals Spectroscopic diagnostic complex based on the magnetron sputtering device with a digital method of the data mining

2020 ◽  
Vol 2 (2) ◽  
pp. 1-8
Author(s):  
Afanasіeva I.A. ◽  
Afanasiev S.N. ◽  
Azarenkov N.A. ◽  
Bobkov V.V. ◽  
Gritsyna V.V. ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Plasma Parameter ◽  
Discharge Plasma ◽  
Emission Spectra ◽  
Optical Emission ◽  
Digital Processing ◽  
Magnetron Discharge ◽  
Diagnostic Complex

A diagnostic complex based on a magnetron sputtering device is proposed for studying a magnetron discharge plasma parameter by optical emission spectroscopy, using two spectroscopic systems: photographic and photoelectric. Software for digital processing of the obtained emission spectra is developed. The results obtained by the two spectroscopic systems are compared.

scholarly journals Effect of Argon and oxygen pressure on Zn magnetron plasma produced by RF power supply

2019 ◽  
Vol 15 (34) ◽  
pp. 65-71
Author(s):  
Kadhim A. Aadim
Keyword(s):  
Electron Temperature ◽  
Oxygen Pressure ◽  
Power Supply ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
Ccd Camera ◽  
Rf Power ◽  
Plasma Parameters ◽  
Working Pressure

In this work, the plasma parameters (electron temperature andelectron density) were determined by optical emission spectroscopy(OES) produced by the RF magnetron Zn plasma produced byoxygen and argon at different working pressure. The spectrum wasrecorded by spectrometer supplied with CCD camera, computer andNIST standard of neutral and ionic lines of Zn, argon and oxygen.The effects of pressure on plasma parameters were studied and acomparison between the two gasses was made.

Comparative characterization of high-density plasma reactors using emission spectroscopy from VUV to NIR

2002 ◽  
Vol 74 (3) ◽  
pp. 459-464 ◽  
Author(s):  
Yi-Kang Pu ◽  
Zhi-Gang Guo ◽  
Zheng-De Kang ◽  
Jie Ma ◽  
Zhi-Cheng Guan ◽  
...  
Keyword(s):  
Electron Temperature ◽  
Inductively Coupled Plasma ◽  
Emission Spectroscopy ◽  
Vacuum Ultraviolet ◽  
Electron Cyclotron Resonance ◽  
Emission Spectra ◽  
Optical Emission ◽  
Electron Collisions ◽  
Inductively Coupled ◽  
Ecr Plasma

Emission spectroscopy is used to investigate the effect of inert gas mixing in nitrogen plasmas generated in inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) plasma sources. Vacuum ultraviolet (VUV) emission of resonance lines is used to determine concentration of atomic nitrogen while electron temperature is obtained from optical emission spectra. It is found that electron temperature can be either raised or reduced effectively by mixing helium or argon in a nitrogen discharge. Electron-electron collisions and superelastic collisions involving metastable species are key factors in electron temperature tuning.

scholarly journals Spectroscopic Investigation of Laser-Induced Graphene Plasma

2021 ◽  
Vol 22 (1) ◽  
Author(s):  
Madyan Khalaf
Keyword(s):  
Electron Temperature ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
Plasma Electron ◽  
Emission Lines ◽  
Spectroscopy Technique ◽  
Fundamental Wavelength ◽  
Upper Limit ◽  
Fundamental Radiation

In this paper, graphene plasma was obtained through the interaction of the fundamental radiation from a pulsed Nd:YAG laser at the fundamental wavelength of 1064 nm focused onto a solid plane of graphene material. This reaction was carried out under conditions of an atmospheric status. The resulting plasma was tested using an optical emission spectroscopy technique. The temperature of the electrons is calculated by the tow line ratio of C I and C II emission lines singly ionised, and the density of the plasma electron is calculated with Saha-Boltzmann equation. The upper limit of the electron temperature was approximately 1.544 eV. The corresponding electron density was 11.5×1015 cm-3. Then the electron temperature decreased when the energy was 300 mJ and it was near 1.462 eV, corresponding to the density of those electrons 8.7×1015 cm-3.

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