Measurements of ion energy and flux during ion-assisted deposition of CdTe epilayers by rf magnetron-sputtering

1991 ◽  
Vol 69 (3-4) ◽  
pp. 236-240 ◽  
Author(s):  
J. G. Cook ◽  
S. R. Das
Keyword(s):  
Voltage Drop ◽  
Rf Magnetron Sputtering ◽  
Plasma Potential ◽  
Crystallographic Structure ◽  
Substrate Bias ◽  
Rf Power ◽  
Substrate Bias Voltage ◽  
Ion Energy ◽  
Discharge Parameters ◽  
Rf Sputter Deposition

Previously we found that the crystallographic structure of CdTe films deposited by means of ion-assisted magnetron rf sputter deposition was very sensitive to the substrate bias voltage and temperature (S. R. Das et al. Can. J. Phys. 65, 864 (1987)). In this work, the ion energy and flux incident on the growing film were determined by means of rf-compensated Langmuir diagnostics. It was found that control of the film phase in the previous work was achieved largely by adjustments of ion energy and substrate temperature; the ion flux changed relatively little. The work is extended to a study of the discharge parameters as a function of rf power, using a CdTe target. The ion and electron densities are found to be sensitive to rf power, whereas the plasma potential Vp and the electron temperature are not. A well-known equation for Vp in terms of the positive excursions of the target voltage gives a poor estimate for Vp because of the voltage drop across the rf impedance of the target disc.

Emission spectroscopy as a noninvasive probe for process control during radio frequency sputter deposition of PbTe

1989 ◽  
Vol 67 (4) ◽  
pp. 287-293 ◽  
Author(s):  
J. G. Cook ◽  
M. S. Aouadi ◽  
S. R. Das
Keyword(s):  
Electron Temperature ◽  
Emission Spectroscopy ◽  
Emission Spectra ◽  
Sputter Deposition ◽  
Emission Lines ◽  
Substrate Bias ◽  
Rf Power ◽  
Magnetron Discharge ◽  
Substrate Bias Voltage ◽  
Pressure Changes

An rf magnetron discharge used to sputter PbTe in Ar is analyzed using emission spectroscopy. The intensity (I) of the strong Pb, Te, and Ar emission lines is determined near the target and near the substrate as the rf power or gas pressure is varied. It is shown that as the rf power is varied at pressures below 0.5 Pa, the electron temperature is not affected, so that the sputtered atom density NPb is proportional to IPb/IAr. The electron temperature is, however, sensitive to pressure changes. Application of a substrate bias voltage has a large effect on the emission spectra which are not understood.

scholarly journals Tribological properties of boron carbonitride coatings sliding against different wood (acerbic, beech, and lauan) balls

2019 ◽  
Vol 28 ◽  
pp. 096369351987573 ◽  
Author(s):  
Zhiwei Wu ◽  
Sihao Li ◽  
Zhaojun Xu ◽  
Qianzhi Wang ◽  
Fei Zhou
Keyword(s):  
Bias Voltage ◽  
Tribological Properties ◽  
Photoelectron Spectroscopy ◽  
Rf Magnetron Sputtering ◽  
Substrate Bias ◽  
Boron Carbonitride ◽  
Friction Behavior ◽  
Substrate Bias Voltage ◽  
Mechanical And Tribological Properties ◽  
C And N

Boron carbonitride (BCN) coatings were prepared using radio frequency (RF) magnetron sputtering via adjusting substrate bias voltage from −50 V to −200 V. The mechanical and tribological properties of the coatings were investigated. The coexistence of B–N, B–C, and N–C bonds was detected in coatings according to X-ray photoelectron spectroscopy analysis, indicating the formation of ternary BCN hybridization. The hardness of BCN coatings increased from 14.4 GPa to 24.3 GPa with an increase of substrate bias voltage, while their adhesion strength on substrate decreased. The friction behavior of BCN coatings sliding against different wood (acerbic, beech, and lauan) balls was examined using a ball-on-disk tribometer. The average friction coefficient fluctuated in a range of 0.74–1.02. The wear track of BCN coating sliding against hardwood (acerbic) presented obvious scratches, which were not noted as sliding against other softwood balls in comparison.

Hydrogenated Silicon Films Prepared by Remote Plasma CVD

1990 ◽  
Vol 192 ◽  
Author(s):  
Sung Chul Kim ◽  
Seung Kyu Lee ◽  
Sung Mo Soe ◽  
Sung Ok Koh ◽  
Sung Shil Ihm ◽  
...  
Keyword(s):  
Chemical Vapour ◽  
Substrate Bias ◽  
Rf Power ◽  
Remote Plasma ◽  
Substrate Bias Voltage ◽  
Hydrogenated Silicon ◽  
Gas Concentration ◽  
Hydrogen Dilution ◽  
Plasma Chemical Vapour Deposition

ABSTRACTWe have studied the improvement of the quality of undoped a-Si:H deposited by remote-plasma chemical vapour deposition. The effects of reactant gas concentration, rf power, substrate bias voltage on the electrical and optical properties have been investigated. Some hydrogen dilution of si lane improves the photoeletric property and a high rf power gives rise to the defect creation due to the ion bombardment on the growing surface. The positive substrate bias improves the quality of undoped a-Si:H.

Studies of Ion-Assisted Growth and Properties of PbTe Epilayers Deposited by Rf Magnetron Sputtering

1989 ◽  
Vol 157 ◽  
Author(s):  
J.G. Cook ◽  
G. Mukherjee ◽  
S.R. Das
Keyword(s):  
Magnetron Sputtering ◽  
Langmuir Probe ◽  
Growth Habit ◽  
Rf Magnetron Sputtering ◽  
Substrate Bias ◽  
Deposition Rates ◽  
Substrate Bias Voltage ◽  
Hall Effect Measurements ◽  
Substrate Temperatures ◽  
Negative Substrate Bias

ABSTRACT(111) PbTe // (111) BaF2 epilayers have been prepared by rf magnetron sputtering. A small negative substrate bias voltage (-10 V) enhances the (111) growth habit at reduced substrate temperatures (180 °C) and increased deposition rates (2.5 μ/h–1). Langmuir probe diagnostics is used to determine the energy and flux density of Ar ions incident on the growing film. Hall effect measurements are made to determine the carrier type and mobility as a function of the growth temperature.

OXYGEN PARTIAL PRESSURE AND SUBSTRATE BIAS VOLTAGE INFLUENCED STRUCTURAL, ELECTRICAL AND OPTICAL PROPERTIES OF RF MAGNETRON SPUTTERED Ag2Cu2O3 FILMS

2011 ◽  
Vol 10 (04n05) ◽  
pp. 653-657 ◽  
Author(s):  
S. UTHANNA ◽  
M. HARI PRASAD REDDY ◽  
J. F. PIERSON
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Bias Voltage ◽  
Single Phase ◽  
Rf Magnetron Sputtering ◽  
Substrate Bias ◽  
Substrate Bias Voltage ◽  
Glass Substrates ◽  
Partial Pressures ◽  
20 Nm

Ag2Cu2O3 films were deposited on glass substrates held at 303 K by RF magnetron sputtering of Ag70 Cu30 target at different oxygen partial pressures and substrate bias voltages. Single phase Ag2Cu2O3 films were formed at an oxygen partial pressure of 2 × 10-2 Pa . The films deposited at oxygen partial pressure 2 × 10-2 Pa and substrate bias voltage of -60 V were nanocrystalline with crystallite size of 20 nm, low electrical resistivity of 3.9 Ωcm and optical band gap of 2.02 eV.

Large Area Surface Treatment by Ion Beam Technology

1996 ◽  
Vol 438 ◽  
Author(s):  
R. L. C. Wu ◽  
W. Lanter
Keyword(s):  
Ion Beam ◽  
High Vacuum ◽  
Polycrystalline Diamond ◽  
Carbon Films ◽  
Ultra High Vacuum ◽  
Diamond Like Carbon ◽  
Chemical Compositions ◽  
Rf Power ◽  
Large Area ◽  
Ion Energy

AbstractAn ultra high vacuum ion beam system, consisting of a 20 cm diameter Rf excilted (13.56 MHz) ion gun and a four-axis substrate scanner, has been used to modify large surfaces (up to 1000 cm2) of various materials, including; infrared windows, silicon nitride, polycrystalline diamond, 304 and 316 stainless steels, 440C and M50 steels, aluminum alloys, and polycarbonates; by depositing different chemical compositions of diamond-like carbon films. The influences of ion energy, Rf power, gas composition (H2/CH4 , Ar/CH4 and O2/CH4/H2), on the diamond-like carbon characteristics has been studied. Particular attention was focused on adhesion, environmental effects, IR(3–12 μm) transmission, coefficient of friction, and wear factors under spacelike environments of diamond-like carbon films on various substrates. A quadrupole mass spectrometer was utilized to monitor the ion beam composition for quality control and process optimization.

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