A Phase Diagram Approach for Predicting Reactions in Al/TiW(-Nitride) Thin-Film Systems

1990 ◽  
Vol 187 ◽  
Author(s):  
A.S. Bhansali ◽  
I.J.M.M. Raaijmakers ◽  
R. Sinclair ◽  
A.E. Morgan ◽  
B.J. Burrow ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Stability ◽  
Phase Diagram ◽  
Reaction Products ◽  
Good Thermal Stability ◽  
Quaternary Phase ◽  
Order Of Magnitude ◽  
Diagram Approach ◽  
Xrd And Tem

AbstractA quaternary phase diagram for Ti–W–N–Al has been calculated from existing thermodynamic data, and is used to predict the Al/TiW-nitride reaction. The predicted reaction products-TiAl3, WAl5, WAl12, and AlN—were observed by XRD and TEM in annealed Al/TiW(-nitride) thin films. The sheet resistance of Al/TiW films increased by an order of magnitude at 550°C, whereas the increase in the case of the Al/TiW-nitride films was not even two-fold. The formation of an interfacial AlN layer was observed in the Al/TiW-nitride metallization. This AlN layer limits the interaction between Al and TiW-nitride, thus providing good thermal stability.

Quaternary Phase Equilibria in the Ti-Si-N-O System: Stability of Metallization Layers and Prediction of Thin Film Reactions

1989 ◽  
Vol 148 ◽  
Author(s):  
A.S. Bhansali ◽  
R. Sinclair
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Diagram ◽  
Phase Equilibria ◽  
System Stability ◽  
Multicomponent Systems ◽  
Phase Rule ◽  
Quaternary Phase ◽  
Circuit Fabrication ◽  
Quaternary Phase Equilibria

ABSTRACTDuring high temperature circuit fabrication, metallization layers can come in contact with both solids and gases. Their stability can be addressed with the aid of phase equilibria. Using the Gibbs phase rule as a basis, a method for generating phase diagrams for multicomponent systems can be established. This procedure is described and illustrated by reference to the quaternary phase diagram of Ti-Si-N-O. This phase diagram can then be used to predict stability and/or reactions in metallization layers and thin films.

Thermal Stability and Electrical Properties of Ag(Al) Metallization

2004 ◽  
Vol 812 ◽  
Author(s):  
Hyunchul C. Kim ◽  
N. David Theodore ◽  
James W. Mayer ◽  
Terry L. Alford
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Stability ◽  
Electrical Resistivity ◽  
High Speed ◽  
Rutherford Backscattering Spectrometry ◽  
Al Alloy ◽  
Good Thermal Stability ◽  
Al Thin Film ◽  
Cu Thin Film

AbstractThe thermal stability and electrical resistivity of Ag(Al) alloy thin films on SiO2 are investigated and compared to pure Ag thin films by performing various analyses: Rutherford backscattering spectrometry (RBS), X-ray diffractometry (XRD), transmission electron microscopy (TEM), and four-point probe. The susceptibility to agglomeration of Ag on SiO2 layer is a drawback of Ag metallization. Ag(Al) thin films show good thermal stability on SiO2 layer without any diffusion barrier. The films are stable up to 600 °C for 1 hour in vacuum. Electrical resistivity of as-deposited Ag (5 at % Al) thin film is slightly higher than that of pure Ag thin film. However, the resistivity of Ag(Al) samples annealed at high temperatures (up to 600 °C for 1 hour in vacuum) remains constant due to the improvement of thermal stability (large reduction of agglomeration). This finding can impact metallization for thin film transistors (TFT) for displays, including flexible displays, and high-speed electronics due to lower resistivity value compared to Cu thin film.

Preparation and Electrical Conductivity Measurement of LiSbO3Thin Films

1996 ◽  
Vol 453 ◽  
Author(s):  
K. Ozawa ◽  
Y. Sakka ◽  
M. Amano
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Conductivity ◽  
Sol Gel ◽  
Conductivity Measurement ◽  
Precursor Film ◽  
Electrical Conductivity Measurement ◽  
Air Atmosphere ◽  
Coating Method ◽  
Order Of Magnitude

AbstractLiSbO3thin films have been prepared by the sol-gel process with metal alkoxides using a spin-coating method. The (Oll)-oriented and randomly oriented LiSbO3thin films are obtained by the precursor film crystallizing under an atmosphere of a flowing mixture of water vapor and oxygen, and an air atmosphere, respectively. The two different atmospheres also affect the crystallization temperature of the films. The electrical conductivity of the (Oll)-oriented LiSbO3thin film is approximately one order of magnitude larger than that of the randomly oriented LiSbO3thin film in the temperature range of 380 to 600°C.

Effect of Microstructure on Phase Formation in Reaction of The Nb/Al Multilayer Thin Films

1991 ◽  
Vol 230 ◽  
Author(s):  
Katayun Barmak ◽  
Kevin R. Coffey ◽  
David A. Rudman ◽  
Simon Foner
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Diagram ◽  
Grain Boundary ◽  
Phase Formation ◽  
Boundary Diffusion ◽  
Equilibrium Phase ◽  
Equilibrium Phase Diagram ◽  
Thin Layers ◽  
Multilayer Thin Films

AbstractWe investigated the phase formation sequence in the reaction of multilayer thin films of Nb/Al with overall compositions of 25 and 33 at.% AI. We report novel phenomena which distinguish thin-film reactions unequivocally from those in bulk systems. For sufficiently thin layers composition and stability of product phases are found to deviate significantly from that predicted from the equilibrium phase diagram. We demonstrate that in the Nb/Al system the length scales below which such deviations occur is about 150 nm. We believe that these phenomena occur due to the importance of grain boundary diffusion and hence microstructure in these thin films.

On the Mechanical Reliability of Photo-BCB-Based Thin Film Dielectric Polymer for Electronic Packaging Applications

1999 ◽  
Vol 122 (1) ◽  
pp. 28-33 ◽  
Author(s):  
Jang-hi Im ◽  
Edward O. Shaffer ◽  
Theodore Stokich, ◽  
Andrew Strandjord ◽  
Jack Hetzner ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Photoelectron Spectroscopy ◽  
Moisture Absorption ◽  
Mechanical Performance ◽  
Adhesion Promoter ◽  
Helium Atmosphere ◽  
Thermally Induced ◽  
Good Thermal Stability ◽  
Substrate Surfaces

This work examines the mechanical performance of thin film coatings from Photosensitive-benzocyclobutene (Photo-BCB) formulations (Cyclotene2 4024, 4026 and 7200), on various substrate surfaces such as Al, Cu, Si, and SiN. The adhesion promoter used was designated AP-3000 and was based on vinyltriacetoxysilane (VTAS), which had been properly hydrolyzed and advanced. Measurement of the interfacial adhesion was performed primarily using the modified Edge Liftoff Test m-ELT. It was found that, by applying the newly developed adhesion promoter, AP-3000, the interfacial energy of Photo-BCB to Al, Cu, Si, and SiN was significantly improved, often approaching the toughness of Photo-BCB, ca. 45 J/m2. The x-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) analyses of the delaminated surfaces of the Photo-BCB/Al structure revealed distinct differences in surface roughness and the chemical composition depending on whether or not adhesion promoter was used. Other parameters important for long term stability (e.g., moisture uptake and thermal stability) of Photo-BCB were also measured. The equilibrium moisture content at 84 percent RH in ambient temperature was low, 0.14 wt percent and the thermally induced weight loss at 330°C in helium atmosphere was less than 1 percent/h. The low moisture absorption and good thermal stability, together with the given mechanical toughness and adhesion, allow the Photo-BCB to be widely usable for various microelectronic packaging applications, for up to 40 μm thick build in the case of silicon substrate. [S1043-7398(00)00701-5]

STABILIZATION AGAINST RESISTANCE DEGRADATION OF SrTiO3 THIN FILMS BY Er DOPING

1999 ◽  
Vol 13 (27) ◽  
pp. 983-989 ◽  
Author(s):  
R. KITA ◽  
Y. MATSU ◽  
Y. MASUDA ◽  
S. YANO
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Heat Treatment ◽  
Current Density ◽  
High Stability ◽  
Er Doping ◽  
Pt Electrodes ◽  
Resistance Degradation ◽  
Order Of Magnitude ◽  
Er Doped

Doping effect of Er on the resistance degradation of SrTiO 3 thin films was investigated. The rate of the resistance degradation was decreased with the increase of the Er content in the films. The increase in the leakage current density at 100°C for the Er-0.186-mol%-doped SrTiO 3 thin film was less than one order of magnitude even after 1000 h, while that for undoped SrTiO 3 thin films, it was by about one order of magnitude after 10 h. The Er-doped STO thin film also showed high stability of the interface between the films and the Pt electrodes against heat treatment in N 2.

Thin Film Infrared Laser Pyrolysis Studies of Thermal Decomposition Mechanisms in Nitramine Propellants

1992 ◽  
Vol 296 ◽  
Author(s):  
Tod R. Botcher ◽  
Charles A. Wight
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Decomposition ◽  
Heat Conduction ◽  
Reaction Mechanism ◽  
Laser Pulse ◽  
Vapor Deposition ◽  
Pyrolysis Product ◽  
Initial Reaction ◽  
Reaction Products

AbstractThin films of RDX (1,3,5-trinitro-1,3,5-triazine) have been prepared by vapor deposition onto a 77 K substrate window and pyrolyzed with a pulsed CO2 laser. Each sample is rapidly quenched after the laser pulse by heat conduction into the cold substrate, and the initial reaction products are trapped on the window for examination by transmission FTIR spectroscopy. We have detected N2O4, the dimer of nitrogen dioxide, as an initial condensed phase pyrolysis product, confirming that scission of one of the N-N bonds is the first step in the reaction mechanism. No evidence was found for formation of methylene nitramine via a proposed concerted depolymerization pathway.

Thermal Stability of Aluminum Doped Zinc Oxide Thin Films

2011 ◽  
Vol 685 ◽  
pp. 147-151 ◽  
Author(s):  
Jin Hua Huang ◽  
Rui Qin Tan ◽  
Jia Li ◽  
Yu Long Zhang ◽  
Ye Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Stability ◽  
Zinc Oxide ◽  
Solar Cells ◽  
Electrode Materials ◽  
Thin Film Solar Cells ◽  
Oxide Thin Films ◽  
Aluminum Doped Zinc Oxide ◽  
Thermal Stability Of

Transparent conductive oxides are key electrode materials for thin film solar cells. Aluminum doped zinc oxide has become one of the most promising transparent conductive oxide (TCO) materials because of its excellent optical and electrical properties. In this work, aluminum doped zinc oxide thin films were prepared using RF magnetron sputtering of a 4 at% ceramic target. The thermal stability of aluminum doped zinc oxide thin films was studied using various physical and structural characterization methods. It was observed that the electrical conductivity of aluminum doped zinc oxide thin films deteriorated rapidly and unevenly when it was heated up to 350 °C. When the aluminum doped zinc oxide thin films were exposed to UV ozone for a short time before heating up, its thermal stability and large area homogeneity were significantly improved. The present work provided a novel method for improving the durability of aluminum doped zinc oxides as transparent conductive electrodes in thin film solar cells.

Investigation on Strain Films in the Thin Film Resistance Strain Gauge

2008 ◽  
Vol 375-376 ◽  
pp. 690-694 ◽  
Author(s):  
Rong Fa Chen ◽  
Dun Wen Zuo ◽  
Yu Li Sun ◽  
Duo Sheng Li ◽  
Wen Zhuang Lu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Strain Gauge ◽  
Alloy Film ◽  
Resistance Strain ◽  
Gauge Factor ◽  
Film Resistance ◽  
Resistance Strain Gauge ◽  
Order Of Magnitude ◽  
Post Deposition

Strain films in the thin film resistance strain gauge are prepared by magnetron sputtering method. Some results concerning the electromechanical and structural properties of nichrome (Ni80Cr20 wt.%) thin films are presented. As compared to the well-known Ni-Cu (constantan) alloy film, which are widely used for manufacturing pressure and force sensors, nichrome (Ni80Cr20 wt.%) thin films exhibit gauge factor values of the same order of magnitude, but they are much more corrosion resistant and adherent to the substrate. The influences of composition and post-deposition annealing on the electrical resistance, temperature coefficient of resistance (TCR) and gauge factor of nichrome (Ni80Cr20 wt.%) thin films are discussed.

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