Preparation and Electrical Conductivity Measurement of LiSbO3Thin Films

1996 ◽  
Vol 453 ◽  
Author(s):  
K. Ozawa ◽  
Y. Sakka ◽  
M. Amano
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Conductivity ◽  
Sol Gel ◽  
Conductivity Measurement ◽  
Precursor Film ◽  
Electrical Conductivity Measurement ◽  
Air Atmosphere ◽  
Coating Method ◽  
Order Of Magnitude

AbstractLiSbO3thin films have been prepared by the sol-gel process with metal alkoxides using a spin-coating method. The (Oll)-oriented and randomly oriented LiSbO3thin films are obtained by the precursor film crystallizing under an atmosphere of a flowing mixture of water vapor and oxygen, and an air atmosphere, respectively. The two different atmospheres also affect the crystallization temperature of the films. The electrical conductivity of the (Oll)-oriented LiSbO3thin film is approximately one order of magnitude larger than that of the randomly oriented LiSbO3thin film in the temperature range of 380 to 600°C.

Influence of Annealing Temperature on the Properties of Sol-Gel Deposited Nb-Doped TiO2 Thin Films

2020 ◽  
Vol 845 ◽  
pp. 59-64
Author(s):  
Wen Cheng Tzou ◽  
Hon Kuan ◽  
You Cheng Chang
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Optical Transmittance ◽  
Crystalline Phases ◽  
Air Atmosphere ◽  
Coating Method ◽  
Nb Content ◽  
Xrd Patterns ◽  
Surface Morphologies

Nb-doped TiO2 (TNO) thin films were prepared by a sol-gel spin coating method with Nb content of 5 at.%, and then annealed in the temperature range of 500-900 °C. The surface morphologies and the crystalline phases of the TNO thin films were investigated by using SEM and XRD patterns. The grain sizes increased with rising annealing temperature, and the crystalline phases were completely transformed from anatase into rutile when the annealing temperature was above 900 °C in air atmosphere. In addition, the optical band gap decreased and the average optical transmittance was between 75 and 70 % in the range of visible light. Furthermore, the better electrical properties were obtained at the annealing temperature of 600 °C.

Effect of Bi dopant on morphological and optical properties of ZnO semiconductor films produced by the sol-gel spin coating process

2021 ◽  
Vol 63 (8) ◽  
pp. 778-782
Author(s):  
Tülay Yıldız ◽  
Nida Katı ◽  
Kadriye Yalçın
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Roughness ◽  
Optical Properties ◽  
Spin Coating ◽  
Sol Gel ◽  
Zno Thin Film ◽  
Spin Coating Method ◽  
Coating Method ◽  
Doped Zno

Abstract In this study, undoped semiconductor ZnO thin film and Bi-doped ZnO thin films were produced using the sol-gel spin coating method. By changing each parameter of the spin coating method, the best conditions for the formation of the film were determined via the trial and error method. When the appropriate parameter was found, the specified parameter was applied for each film. The structural, superficial, and optical properties of the films produced were characterized via atomic force microscope (AFM), UV-visible spectroscopy, and Fourier transform infrared (FTIR), and the effects of Bi dopant on these properties were investigated. When the morphological properties of the undoped and Bi-doped ZnO films were examined, it was observed that they had a structure in a micro-fiber shape consisting of nanoparticles. When the surface roughness was examined, it was observed that the surface roughness values became larger as the rate of Bi dopant increased. By examining the optical properties of the films, it was determined that they were direct band transition materials and Bi-doped thin films were involved in the semiconductor range. In addition, optical properties changed positively with Bi dopant. Since Bi-doped ZnO thin film has a wide bandgap and good optical properties, it is a material that can be used in optoelectronic applications.

Annealing Effect on Morphology Optical and Crystallographic Properties of Solution-Based Cu2ZnSnS4 Thin Films

2020 ◽  
Vol 12 (3) ◽  
pp. 388-391
Author(s):  
Raees A. Gani Shaikh ◽  
Sagar A. More ◽  
Gauri G. Bisen ◽  
Sanjay S. Ghosh
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Optical Properties ◽  
Sol Gel ◽  
Crystallographic Structure ◽  
Sem Images ◽  
Promising Alternative ◽  
Coating Method ◽  
Czts Thin Films

CZTS chalcopyrite semiconductor has received attention as a promising alternative as an absorber in thin-film solar cells because of the high absorption coefficient, direct bandgap (1.5 eV), nontoxic elements and sustained high electrical and optical properties. In the present work, CZTS thin film has been developed by the sol–gel spin coating method by thermal decomposition of metal ions and thiourea complexes under ambient environment. Annealing study of the above prepared CZTS thin films has been performed. The prepared CZTS samples were annealed at different temperatures 250 °C, 275 °C, 300 °C, and 325 °C respectively. Crystallographic structure, surface morphology, and optical properties were studied. XRD pattern shows the kesterite structure of the films with characteristics peaks for planes (112), (200), (220), and (312). Crystallite size, strain and dislocation densities were calculated. Sample annealed at 300 °C shows the most intense XRD peak and hence larger grain size. Grain size tends to increase as the annealing temperature increases up to 300 °C. At 325 °C SEM images show that cracks are formed in the film. At lower temperatures uniform, homogenous, smooth and densely packed films are formed. Raman spectroscopy is used to determine phase purity because many of binary and ternary chalcogenides show XRD peaks at similar positions to that of CZTS. A single peak at 336 cm–1 shows the pure kestrite phase of CZTS for all films.

Evaluation of the pozzolanicity of nanostructured sol-gel silica and silica fume by electrical conductivity measurement

2018 ◽  
Vol 160 ◽  
pp. 252-257 ◽  
Author(s):  
Laísa R.S. Carneiro ◽  
Dayana C.S. Garcia ◽  
Michelle C.F. Costa ◽  
Manuel Houmard ◽  
Roberto B. Figueiredo
Keyword(s):  
Electrical Conductivity ◽  
Silica Fume ◽  
Sol Gel ◽  
Conductivity Measurement ◽  
Electrical Conductivity Measurement

Electrical and Structural Properties of TiO2 Thin Film Prepared at Different Annealing Temperatures by Sol-Gel Spin-Coating Method

2013 ◽  
Vol 667 ◽  
pp. 371-374 ◽  
Author(s):  
M. Basri ◽  
Mohd Nor Asiah ◽  
Mohd Khairul bin Ahmad ◽  
Mohamad Hafiz Mamat ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Structural Properties ◽  
Spin Coating ◽  
Sol Gel ◽  
Annealing Treatment ◽  
Tio2 Thin Films ◽  
Glass Substrates ◽  
Annealing Temperatures ◽  
Coating Method

Titanium Dioxide (TiO2) thin films have been prepared on glass substrates by using sol-gel method and spin-coating technique. The samples have been annealed at temperatures of 350°C ~ 500oC. The electrical and structural properties of the thin films due to the changes of annealing treatment process were investigated by 2 point probes I-V measurement and X-ray Diffraction (XRD) respectively. The result show that resistivity of the thin film decreased with annealing temperatures. XRD characterization indicates crystalline structure of TiO2 thin films improved as annealed at higher temperatures.

scholarly journals Electrode Fabrication, Material Characterization and Capacitance Measurement Studies of Polyacrylonitrile/Polypyrrole(PAN/PPY) Composite

2020 ◽  
Vol 11 (1) ◽  
pp. 7614-7620
Keyword(s):  
Electrical Conductivity ◽  
Composite Material ◽  
Sol Gel ◽  
Conductivity Measurement ◽  
Capacitance Measurement ◽  
Electrical Conductivity Measurement ◽  
Dc Electrical Conductivity ◽  
The Stability ◽  
Conductivity Retention ◽  
Thermal Stability Of

For the fabrication of the electrode, the Polyvinyl alcohol/polyaniline composite was prepared by the sol-gel method. The electrical conductivity of the composite was determined on compressed pellets by using a 4-in-line-probe dc electrical conductivity-measuring instrument. The electrical conductivity measurement studies revealed that the composite possessed the electrical conductivity in the range of 10-4 to 10-2 S cm-1, i.e., in the semiconductor region and followed the Arrhenius equation. The thermal stability of the composite material (HCl treated) in terms of dc electrical conductivity retention was studied under isothermal conditions (at 50, 70, 90, 110, 130, and 150 °C) at 15 min intervals. The stability of the material (HCl treated) in terms of electrical conductivity retention was also monitored for five cycles at increasing temperatures with 1 h intervals. The composite material was found thermally and environmentally stable in terms of dc electrical conductivity retention.

Band Gap and Conductivity Measurement of TiO2 Thin Films Deposited by Sol-Gel Spin Coating Method

2012 ◽  
Vol 500 ◽  
pp. 273-277
Author(s):  
Davinder Rathee ◽  
Mukesh Kumar ◽  
Sandeep K. Arya ◽  
Mukesh Sharma
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Spin Coating ◽  
Sol Gel ◽  
Conductivity Measurement ◽  
Spin Coating Method ◽  
Coating Method

Synthesis of ZnO Thin Film on Porous Silicon by Spin Coating in Various Low Molarities Precursor

2013 ◽  
Vol 701 ◽  
pp. 167-171 ◽  
Author(s):  
Kevin Alvin Eswar ◽  
Azlinda Ab Azlinda ◽  
F.S. Husairi ◽  
M. Rusop ◽  
Saifollah Abdullah
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Roughness ◽  
Porous Silicon ◽  
Spin Coating ◽  
Substrate Surface ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Coating Method ◽  
P Type

Zinc acetate dehydrate as starting material along with diethanolamine as stabilizer, and isopropyl as a solvent were used to synthesis ZnO thin films in different low molarities. Sol-gel spin coating method was used in depositing ZnO on porous silicon substrate surface. In other to prepare substrate, p-type silicon wafer was etched by dilute hydrofluoric acid to modify the surface becomes porous. Field Emission Scanning Electron Microscopy (FESEM) was employed to study the surface morphology. It is found that ZnO thin films were successfully deposited on the substrates which are composed of ZnO nanoparticles with size ~16 nm to ~22nm. Atomic Force Microscopy (AFM) was used to investigate the surface roughness of thin film. The result shows that the surface roughness is increase as the increases of molarities. Photoluminescence (PL) spectra were done in range of 350 nm to 800 nm. The result shows peaks belonging to ZnO, ZnO defects, and porous silicon respectively are appeared.

Band Gap and Conductivity Measurement of TiO2 Thin Films Deposited by Sol-Gel Spin Coating Method

2012 ◽  
Vol 500 ◽  
pp. 273-277 ◽  
Author(s):  
Davinder Rathee ◽  
Mukesh Kumar ◽  
Sandeep K. Arya ◽  
Mukesh Sharma
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Spin Coating ◽  
Sol Gel ◽  
Conductivity Measurement ◽  
Thermo Gravimetric ◽  
Spin Coating Method ◽  
Thermo Gravimetric Analyzer ◽  
Current Voltage ◽  
Coating Method

Thin films of TiO2have been deposited on to cleaned glass substrate by sol gel spin coating method. The XRD analyses confirm different crystalline phases of TiO2thin films. The grain size calculated by the help of Scherer’s formula and found to be 23nm, 37nm and 54 nm respectively for TiO2(004), TiO2(200) and TiO2(211) orientations. The band gap was calculated 3.6 eV by UV-spectrophotometer. The refractive index of the TiO2film was measured by Ellipsometry and found to be 2.33. Conductivity was measured using Current voltage (I-V) characteristics. To determine composition and thermal stability, thermo gravimetric Analyzer (TGA) and Differential Scanning Calorimeter (DSC) analysis was made on samples.

scholarly journals SINTESIS LAPISAN TIPIS TiO2:(F+In) PADA SUBSTRAT KACA DENGAN METODE SPIN-COATING SEBAGAI BAHAN SEL SURYA

2021 ◽  
Vol 7 (1) ◽  
pp. 219
Author(s):  
Dedi Riyan Rizaldi ◽  
Aris Doyan ◽  
Susilawati Susilawati
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Thin Layer ◽  
Spin Coating ◽  
Sol Gel ◽  
Synthesis Process ◽  
Spin Coating Method ◽  
Coating Method ◽  
Layer Sample

ABSTRAKTelah dilakukan penelitian sintesis lapisan tipis TiO2 dengan doping campuran Fluorin dan Indium. Tujuan penelitian ini untuk menghasilkan lapisan tipis yang baik digunakan sebagai salah satu komponen pada sel surya yaitu lapisan absorben. Sintesis lapisan tipis menggunakan metode spin-coating dengan bantuan alat centrifuge yang dimodifikasi. Penelitian ini dilaksanakan di Laboratorium Kimia Dasar dan Kimia Organik, Fakultas Matematika dan Ilmu Pengetahuan Alam, Universitas Mataram. Jenis penelitian ini adalah penelitian eksperimen murni dengan data dianalisis secara deskriptif. Proses sintesis lapisan tipis terdiri dari beberapa tahapan yaitu 1). Persiapan substrat, 2). Pembuatan larutan sol-gel, 3). Deposisi lapisan tipis, dan 4). Pemanasan sampel lapisan tipis. Sampel lapisan tipis diberikan tiga perlakuan berbeda yang terdiri dari 1). Konsentrasi larutan, 2). Jumlah lapisan, dan 3). Variasi suhu pemanasan sampel. Berdasarkan penelitian yang sudah dilakukan didapatkan bahwa semakin besar konsentrasi doping yang digunakan maka semakin gelap permukaan sampel lapisan tipis yang dihasilkan. Kata kunci: sintesis lapisan tipis; TiO2:(F+In); metode spin-coating; sel surya. ABSTRACTResearch on the synthesis of TiO2 thin films with doping mixture of Fluorine and Indium has been carried out. The aim of this research is to produce a thin film which is suitable for use as a component of solar cells, namely the absorbent layer. Synthesis of thin films using the spin-coating method with the help of a modified centrifuge. This research was conducted at the Laboratory of Basic Chemistry and Organic Chemistry, Faculty of Mathematics and Natural Sciences, Mataram University. This type of research is pure experimental research with data analyzed descriptively. The thin layer synthesis process consists of several stages, namely 1). Substrate preparation, 2). Preparation of sol-gel solution, 3). Thin layer deposition, and 4). Heating the thin layer sample. The thin layer sample was given three different treatments consisting of 1). The concentration of the solution, 2). Number of layers, and 3). Variation in sample heating temperature. Based on the research that has been done, it was found that the greater the doping concentration used, the darker the surface of the resulting thin layer sample. Keywords: synthesis thin film, TiO2:(F+In), spin-coating method, solar cells

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