Low - Temperature Defect - Induced Aging of GaAs Grown by Molecular Beam Epitaxy

1990 ◽  
Vol 184 ◽  
Author(s):  
I. Szafranek ◽  
S. A. Stockman ◽  
M. Szafranek ◽  
M. J. McCollum ◽  
M. A. Plano ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Variable Temperature ◽  
High Mobility ◽  
Hole Mobility ◽  
Acceptor Pair ◽  
Hall Effect Measurements ◽  
One Year ◽  
P Type

ABSTRACTDegradation in optical and electrical properties has been observed for high-purity and high-mobility p-type GaAs layers which contain significant concentrations of an unidentified shallow acceptor-like defect, labeled “A”, that is frequently incorporated in crystals grown by molecular beam epitaxy. Low-temperature photoluminescence and variable temperature Hall-effect measurements were employed to monitor the aging process in samples stored for about one year at room temperature. Profound changes in the exciton recombination spectra, indicative of increasing concentration of the “A” defect, have been accompanied by a decrease in hole mobility and an increase in carrier concentration. These results are discussed in the context of the acceptor-pair defect model, originally proposed by Eaves and Halliday [J. Phys. C: Solid State Phys. 17, L705 (1984)].

P-Type Doping with Arsenic in MBE-HgCdTe Using Planar Doping Approach

1996 ◽  
Vol 450 ◽  
Author(s):  
F. Aqariden ◽  
P. S. Wijew Arnasuriya ◽  
S. Rujirawat ◽  
S. Sivananthan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Optoelectronic Devices ◽  
Mbe Growth ◽  
In Situ Fabrication ◽  
P Type ◽  
Arsenic Incorporation ◽  
Planar Doping

ABSTRACTThe results of arsenic incorporation in HgCdTe (MCT) layers grown by molecular beam epitaxy (MBE) are reported. The incorporation into MBE-MCT was carried out by a technique called planar doping. Arsenic was successfully incorporated during the MBE growth or after a low temperature anneal as acceptors. These results are very promising for in-situ fabrication of advanced optoelectronic devices using HgCdTe material.

High-mobility Sb-doped p-type ZnO by molecular-beam epitaxy

2005 ◽  
Vol 87 (15) ◽  
pp. 152101 ◽  
Author(s):  
F. X. Xiu ◽  
Z. Yang ◽  
L. J. Mandalapu ◽  
D. T. Zhao ◽  
J. L. Liu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Mobility ◽  
P Type

Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

2014 ◽  
Vol 105 (24) ◽  
pp. 241103 ◽  
Author(s):  
M. Malinverni ◽  
J.-M. Lamy ◽  
D. Martin ◽  
E. Feltin ◽  
J. Dorsaz ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Laser Diodes ◽  
P Type

The effect of low-temperature annealing on the electrical properties of the p-type cadmium–mercury–tellurium heterostructures grown by molecular beam epitaxy

2013 ◽  
Vol 56 (3) ◽  
pp. 313-318
Author(s):  
D. Yu. Protasov ◽  
А. R. Novoselov ◽  
D. V. Kombarov ◽  
V. Ya. Kostyuchenko ◽  
А. Е. Dolbak ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Low Temperature Annealing ◽  
P Type

Donor–acceptor pair luminescence of nitrogen doping p-type ZnO by plasma-assisted molecular beam epitaxy

2007 ◽  
Vol 122-123 ◽  
pp. 368-370 ◽  
Author(s):  
S.J. Jiao ◽  
Y.M. Lu ◽  
D.Z. Shen ◽  
Z.Z. Zhang ◽  
B.H. Li ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Nitrogen Doping ◽  
Molecular Beam ◽  
Acceptor Pair ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
P Type

Low Temperature Photoluminescence Study of Doped CdTe and CdMnte Films Grown by Photoassisted Molecular Beam Epitaxy

1986 ◽  
Vol 90 ◽  
Author(s):  
N. C. Giles ◽  
R. N. Bicknell ◽  
J. F. Schetzina
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Growth Technique ◽  
Free Carriers ◽  
Band Filling ◽  
Dopant Atoms ◽  
Photoluminescence Studies ◽  
P Type

ABSTRACTN-type and p-type (100) CdTe films have been grown on (100) CdTe substrates by photoassisted molecular beam epitaxy, using indium and antimony as n-type and p-type dopants, respectively. The application of this growth technique to substitutionally dope another II-VI material is demonstrated by the successful n-type doping of (100) CdMnTe films with indium. Modulationdoped superlattices consisting of barrier layers of CdMnTe:In alternating with CdTe have also been grown. The point defect nature of these in situ doped films and multilayers is studied with low temperature (1.6–5 K) photoluminescence and excitation photoluminescence measurements. The introduction of the dopant atoms using this new growth technique produces immediate changes in the photoluminescence spectra of the epilayers. Photoluminescence studies of the superlattices show the effects of quantum well confinement and band filling due to free carriers.

p-Type Conductivity Control in ZnO Films Grown by Molecular-Beam Epitaxy

2016 ◽  
Vol 857 ◽  
pp. 131-135
Author(s):  
Seung Hwan Park ◽  
Dong Cheol Oh ◽  
Chul Gyu Jhun ◽  
Seung Oh Han ◽  
Takafumi Yao
Keyword(s):  
Molecular Beam Epitaxy ◽  
Thermal Annealing ◽  
Electron Concentration ◽  
Molecular Beam ◽  
Hole Concentration ◽  
Hole Mobility ◽  
Zno Films ◽  
Type Conductivity ◽  
Donor Type ◽  
P Type

We report on the p-type conductivity control using N and Te codoping and thermal annealing in the ZnO films, heteroepitaxially grown on Al2O3 substrates and homoepitaxially grown on ZnO substrates by molecular-beam epitaxy, respectively. The N and Te codoping and the homoepitaxy effectively reduce the background electron concentration in ZnO films due to the suppression of various defect generation, and the thermal annealing causes the conductivity conversion from n-type to p-type due to the activation of N-related defects and the annihilation of donor-type defects. The p-type conductivity with a hole concentration of 1.61016 cm-3 and a hole mobility of 16 cm2/Vsec is obtained in the ZnO:N+T film grown on the Al2O3 substrate and the p-type conductivity with a hole concentration of 4.01016 cm-3 and a hole mobility of 11 cm2/Vsec is obtained in the ZnO:N+Te film grown on the ZnO substrate.

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