Low Temperature Photoluminescence Study of Doped CdTe and CdMnte Films Grown by Photoassisted Molecular Beam Epitaxy

1986 ◽  
Vol 90 ◽  
Author(s):  
N. C. Giles ◽  
R. N. Bicknell ◽  
J. F. Schetzina
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Growth Technique ◽  
Free Carriers ◽  
Band Filling ◽  
Dopant Atoms ◽  
Photoluminescence Studies ◽  
P Type

ABSTRACTN-type and p-type (100) CdTe films have been grown on (100) CdTe substrates by photoassisted molecular beam epitaxy, using indium and antimony as n-type and p-type dopants, respectively. The application of this growth technique to substitutionally dope another II-VI material is demonstrated by the successful n-type doping of (100) CdMnTe films with indium. Modulationdoped superlattices consisting of barrier layers of CdMnTe:In alternating with CdTe have also been grown. The point defect nature of these in situ doped films and multilayers is studied with low temperature (1.6–5 K) photoluminescence and excitation photoluminescence measurements. The introduction of the dopant atoms using this new growth technique produces immediate changes in the photoluminescence spectra of the epilayers. Photoluminescence studies of the superlattices show the effects of quantum well confinement and band filling due to free carriers.

P-Type Doping with Arsenic in MBE-HgCdTe Using Planar Doping Approach

1996 ◽  
Vol 450 ◽  
Author(s):  
F. Aqariden ◽  
P. S. Wijew Arnasuriya ◽  
S. Rujirawat ◽  
S. Sivananthan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Optoelectronic Devices ◽  
Mbe Growth ◽  
In Situ Fabrication ◽  
P Type ◽  
Arsenic Incorporation ◽  
Planar Doping

ABSTRACTThe results of arsenic incorporation in HgCdTe (MCT) layers grown by molecular beam epitaxy (MBE) are reported. The incorporation into MBE-MCT was carried out by a technique called planar doping. Arsenic was successfully incorporated during the MBE growth or after a low temperature anneal as acceptors. These results are very promising for in-situ fabrication of advanced optoelectronic devices using HgCdTe material.

In situ Mg surface treatment of p-type GaN grown by ammonia-molecular-beam epitaxy for efficient Ohmic contact formation

2003 ◽  
Vol 82 (5) ◽  
pp. 736-738 ◽  
Author(s):  
H. Tang ◽  
J. A. Bardwell ◽  
J. B. Webb ◽  
S. Rolfe ◽  
Y. Liu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Treatment ◽  
Ohmic Contact ◽  
Molecular Beam ◽  
Contact Formation ◽  
P Type ◽  
Ohmic Contact Formation

Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

2014 ◽  
Vol 105 (24) ◽  
pp. 241103 ◽  
Author(s):  
M. Malinverni ◽  
J.-M. Lamy ◽  
D. Martin ◽  
E. Feltin ◽  
J. Dorsaz ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Laser Diodes ◽  
P Type

Strain relaxation of the In0.53Ga0.47As epi-layer grown on a Si substrate using molecular beam epitaxy

CrystEngComm ◽  
2014 ◽  
Vol 16 (46) ◽  
pp. 10721-10727 ◽  
Author(s):  
Fangliang Gao ◽  
Lei Wen ◽  
Yunfang Guan ◽  
Jingling Li ◽  
Xiaona Zhang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Si Substrate ◽  
Structural Perfection ◽  
High Degree

The as-grown In0.53Ga0.47As epi-layer grown on Si substrate by using low-temperature In0.4Ga0.6As buffer layer with in-situ annealing is of a high degree of structural perfection.

4H-SiC PiN Diodes Fabricated Using Low-Temperature Halo-Carbon Epitaxial Growth Method

2010 ◽  
Vol 645-648 ◽  
pp. 925-928 ◽  
Author(s):  
Bharat Krishnan ◽  
Joseph Neil Merrett ◽  
Galyna Melnychuk ◽  
Yaroslav Koshka
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Surface Passivation ◽  
Drift Region ◽  
Pin Diodes ◽  
Growth Technique ◽  
Growth Method ◽  
Heavily Doped ◽  
P Type

In this work, the benefits of the low-temperature halo-carbon epitaxial growth at 1300oC to form anodes of 4H-SiC PiN diodes were investigated. Regular-temperature epitaxial growth was used to form an 8.6 μm-thick n-type drift region with net donor concentration of 6.45x1015 cm-3. Trimethylaluminum doping, in situ during blanket low-temperature halo-carbon epitaxial growth, was used to form heavily doped p-type layers. Forward I-V characteristics measured from diodes having different anode areas indicated that the new epitaxial growth technique provides anodes with low values of the series resistance, even without contact annealing. At room temperature, a 100 μm-diameter diode had a forward voltage of 3.75 V at 1000A/cm² before annealing and 3.23 V after annealing for 2 min at 750°C. The reverse breakdown voltage was more than 680 V (on average) in the devices without edge termination or surface passivation.

The effect of low-temperature annealing on the electrical properties of the p-type cadmium–mercury–tellurium heterostructures grown by molecular beam epitaxy

2013 ◽  
Vol 56 (3) ◽  
pp. 313-318
Author(s):  
D. Yu. Protasov ◽  
А. R. Novoselov ◽  
D. V. Kombarov ◽  
V. Ya. Kostyuchenko ◽  
А. Е. Dolbak ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Low Temperature Annealing ◽  
P Type
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