planar doping
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Structural, electronic, and magnetic properties of non-planar doping of BeO in graphene: a DFT study

2017 ◽  
Vol 41 (19) ◽  
pp. 10780-10789 ◽  
Author(s):  
Akhtar Hussain ◽  
Saif Ullah ◽  
M. Arshad Farhan ◽  
Muhammad Adnan Saqlain ◽  
Fernando Sato
Keyword(s):  
Magnetic Properties ◽  
Band Gap ◽  
Magnetic Effect ◽  
Dft Study ◽  
Electronic And Magnetic Properties ◽  
Molecular Doping ◽  
Planar Doping

The non-planar molecular doping of BeO is more efficient in inducing a band gap relative to its planar doping with no magnetic effect realization.

Planar doping of crystalline fullerene with cobalt

2006 ◽  
Vol 423 (4-6) ◽  
pp. 366-370 ◽  
Author(s):  
Vasily Lavrentiev ◽  
Hiroshi Naramoto ◽  
Kazumasa Narumi ◽  
Seiji Sakai ◽  
Pavel Avramov
Keyword(s):  
Planar Doping

Effect of planar doping in Co/SiO2–Ni/Cu/Co structures

2001 ◽  
Vol 226-230 ◽  
pp. 683-684 ◽  
Author(s):  
H Wang ◽  
Y.X Xia ◽  
Q.Y Jin ◽  
F.M Li
Keyword(s):  
Planar Doping

Deep-level planar doping of titanium in GaAs

1996 ◽  
Vol 194 (1) ◽  
pp. 145-158 ◽  
Author(s):  
P. Krispin ◽  
H. Kostial
Keyword(s):  
Deep Level ◽  
Planar Doping

P-Type Doping with Arsenic in MBE-HgCdTe Using Planar Doping Approach

1996 ◽  
Vol 450 ◽  
Author(s):  
F. Aqariden ◽  
P. S. Wijew Arnasuriya ◽  
S. Rujirawat ◽  
S. Sivananthan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Optoelectronic Devices ◽  
Mbe Growth ◽  
In Situ Fabrication ◽  
P Type ◽  
Arsenic Incorporation ◽  
Planar Doping

ABSTRACTThe results of arsenic incorporation in HgCdTe (MCT) layers grown by molecular beam epitaxy (MBE) are reported. The incorporation into MBE-MCT was carried out by a technique called planar doping. Arsenic was successfully incorporated during the MBE growth or after a low temperature anneal as acceptors. These results are very promising for in-situ fabrication of advanced optoelectronic devices using HgCdTe material.

Low temperature growth and planar doping of ZnSe in a plasma-stimulated LP-MOVPE system

1995 ◽  
Vol 24 (11) ◽  
pp. 1671-1675 ◽  
Author(s):  
W. Taudt ◽  
B. Wachtendorf ◽  
F. Sauerländer ◽  
H. Hamadeh ◽  
S. Lampe ◽  
...  
Keyword(s):  
Low Temperature ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Planar Doping

Li Planar Doping of ZnSe by Molecular Beam Epitaxy

1995 ◽  
Vol 34 (Part 1, No. 8A) ◽  
pp. 4118-4119
Author(s):  
Nobuo Matsumura ◽  
Kenro Yamawaki ◽  
Susumu Ichikawa ◽  
Junji Saraie
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Planar Doping
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