Donor–acceptor pair luminescence of nitrogen doping p-type ZnO by plasma-assisted molecular beam epitaxy

2007 ◽  
Vol 122-123 ◽  
pp. 368-370 ◽  
Author(s):  
S.J. Jiao ◽  
Y.M. Lu ◽  
D.Z. Shen ◽  
Z.Z. Zhang ◽  
B.H. Li ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Nitrogen Doping ◽  
Molecular Beam ◽  
Acceptor Pair ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
P Type

Thermal Activation of Beryllium in GaN Grown by RF-Plasma Molecular Beam Epitaxy

2003 ◽  
Vol 798 ◽  
Author(s):  
B. L. VanMil ◽  
Kyoungnae Lee ◽  
Lijun Wang ◽  
N. C. Giles ◽  
T. H. Myers
Keyword(s):  
Molecular Beam Epitaxy ◽  
Thermal Activation ◽  
Molecular Beam ◽  
Rf Plasma ◽  
Acceptor Pair ◽  
Pure Nitrogen ◽  
Donor Acceptor ◽  
Hydrogen Mixtures ◽  
Donor Acceptor Pair ◽  
Polar Mechanism

ABSTRACTDifferences in the optical activity of Be in GaN epilayers grown on different surface polarities by rf-plasma molecular beam epitaxy are investigated. Nitrogen-polar GaN doped with Be exhibits a significantly higher intensity of donor-acceptor pair (DAP) photoluminescence (PL) than similarly doped Ga-polar GaN, indicating the Be is incorporating at microscopically different sites, or possibly is forming different compensating complexes. Highly Be-doped Ga-polar GaN apparently forms isolated polarity-inverted regions which then incorporate Be via the N-polar mechanism resulting in the DAP PL. High temperature annealing of the Ga-polar layers both under nitrogen/hydrogen mixtures and under pure nitrogen atmospheres activates the DAP PL.

Donor acceptor pair in molecular beam epitaxy grown GaN

1997 ◽  
Vol 43 (1-3) ◽  
pp. 242-245 ◽  
Author(s):  
G.B. Ren ◽  
D.J. Dewsnip ◽  
D.E. Lacklison ◽  
J.W. Orton ◽  
T.S. Cheng ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Acceptor Pair ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

scholarly journals Photoluminescence of GaN Grown by Molecular Beam Epitaxy on Freestanding GaN Template

2002 ◽  
Vol 722 ◽  
Author(s):  
M. A. Reshchikov ◽  
F. Yun ◽  
D. Huang ◽  
L. He ◽  
H. Morkoç ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Broad Band ◽  
Shallow Donor ◽  
Binding Energies ◽  
Main Peak ◽  
Acceptor Pair ◽  
Pl Spectra ◽  
Frequency Plasma ◽  
Donor Acceptor

AbstractWe studied photoluminescence (PL) of GaN layers grown by molecular beam epitaxy on freestanding high-quality GaN templates. The layers with thickness of ∼ 1 νm were grown under Ga-rich conditions using radio-frequency plasma as a nitrogen source. The PL spectra from both the epilayer and the substrate contain a plethora of very sharp peaks related to excitonic transitions. Through the analysis of the excitonic part of the spectra, we have identified two shallow donors with the binding energies of 28.8 and 32.6 meV, attributed to SiGa and ON, respectively. The PL spectra involved also emissions due to shallow donor-acceptor pair transitions with the main peak at 3.26 eV and a broad band peaking at ∼2.5 - 2.6 eV (green band). The green bands in the GaN substrate and GaN overgrown layer have different energy positions invoking the suggestion that they must have their genesis in different defect centers.

p-type conductivity and donor-acceptor pair emission in Cd1−xFexS dilute magnetic semiconductors

2006 ◽  
Vol 89 (26) ◽  
pp. 262118 ◽  
Author(s):  
X. J. Wu ◽  
D. Z. Shen ◽  
Z. Z. Zhang ◽  
J. Y. Zhang ◽  
K. W. Liu ◽  
...  
Keyword(s):  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors ◽  
Acceptor Pair ◽  
Type Conductivity ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
P Type

scholarly journals On the origin of the 2.8 eV blue emission in p-type GaN:Mg : A time-resolved photoluminescence investigation

2001 ◽  
Vol 6 ◽  
Author(s):  
F. Shahedipour ◽  
B.W. Wessels
Keyword(s):  
Luminescence Intensity ◽  
Random Distribution ◽  
Blue Emission ◽  
Acceptor Pair ◽  
Time Resolved ◽  
Donor Acceptor ◽  
Shallow Acceptors ◽  
Donor Acceptor Pair ◽  
P Type ◽  
Time Resolved Photoluminescence

The decay dynamics of the 2.8 eV emission band in p-type GaN was investigated using time-resolved photoluminescence spectroscopy. The luminescence intensity decays non-exponentially. The decay dynamics were consistent with donor-acceptor pair recombination for a random distribution of pair distances. Calculations using the Thomas-Hopfield model indicated that recombination involves deep donors and shallow acceptors.

scholarly journals Studies on Carbon as Alternative P-Type Dopant for Gallium Nitride

1999 ◽  
Vol 4 (S1) ◽  
pp. 526-531 ◽  
Author(s):  
U. Birkle ◽  
M. Fehrer ◽  
V. Kirchner ◽  
S. Einfeldt ◽  
D. Hommel ◽  
...  
Keyword(s):  
Thermal Activation ◽  
Atomic Layer ◽  
Typical Feature ◽  
Acceptor Pair ◽  
Carbon Doped ◽  
Order Of Magnitude ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
P Type ◽  
Carbon Concentrations

GaN layers were grown by molecular beam epitaxy and doped with carbon of nominal concentrations ranging from 1016 cm−3 to 1020 cm−3. The incorporation of carbon leads to a reduction of the background electron concentration by one order of magnitude but the material remains n-type. For high carbon concentrations a re-increase of the carrier concentration is observed which is related to selfcompensation. Investigations of the donor-acceptor-pair luminescence show that doping with carbon is accompanied by the generation of a new donor exhibiting a thermal activation energy of about 55 meV. Layers grown by atomic layer epitaxy are marked by an increased intensity of the donor-acceptor-pair band luminescence which is attributed to the enforced incorporation of carbon onto the nitrogen sublattice. The yellow luminescence is found to be a typical feature of all carbon doped layers in contrast to nominally undoped samples.

Studies on Carbon as Alternative P-Type Dopant for Gallium Nitride

1998 ◽  
Vol 537 ◽  
Author(s):  
U. Birkle ◽  
M. Fehrer ◽  
V. Kirchner ◽  
S. Einfeldt ◽  
D. Hommel ◽  
...  
Keyword(s):  
Thermal Activation ◽  
Atomic Layer ◽  
Typical Feature ◽  
Acceptor Pair ◽  
Carbon Doped ◽  
Order Of Magnitude ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
P Type ◽  
Carbon Concentrations

AbstractGaN layers were grown by molecular beam epitaxy and doped with carbon of nominal concentrations ranging from 1016 cm-1 to 10 20 cm-1. The incorporation of carbon leads to a reduction of the background electron concentration by one order of magnitude but the material remains n-type. For high carbon concentrations a re-increase of the carrier concentration is observed which is related to selfcompensation. Investigations of the donor-acceptor-pair luminescence show that doping with carbon is accompanied by the generation of a new donor exhibiting a thermal activation energy of about 55 meV. Layers grown by atomic layer epitaxy are marked by an increased intensity of the donor-acceptor-pair band luminescence which is attributed to the enforced incorporation of carbon onto the nitrogen sublattice. The yellow luminescence is found to be a typical feature of all carbon doped layers in contrast to nominally undoped samples.

High quantum efficiency of photoluminescence in GaN and ZnO

2005 ◽  
Vol 892 ◽  
Author(s):  
Michael A. Reshchikov ◽  
Xing Gu ◽  
Bill Nemeth ◽  
Jeff Nause ◽  
Hadis Morkoç
Keyword(s):  
Quantum Efficiency ◽  
Molecular Beam ◽  
Shallow Donor ◽  
Nonradiative Recombination ◽  
Acceptor Pair ◽  
High Quantum Efficiency ◽  
Donor Acceptor ◽  
Si Doped ◽  
Donor Acceptor Pair ◽  
Zno Crystal

AbstractThe quantum efficiency (QE) of photoluminescence (PL) has been estimated in GaN and ZnO samples. A Si-doped GaN layer grown by molecular beam epitaxy (MBE) exhibited the highest QE of about 90% at low temperatures. Recombination via the shallow donor-acceptor pair transitions dominated in this sample. In contrast, a bulk ZnO crystal with the QE of PL of about 85% contained almost no defect- or impurity-related PL signatures besides the emission attributed to free and bound excitons. The sources of radiative and nonradiative recombination in GaN and ZnO are discussed.

P-Type Conversion of Nitrogen Doped ZnSe Films Grown By Mocvd

1991 ◽  
Vol 222 ◽  
Author(s):  
Babar A. Khan ◽  
Nikhil Taskar ◽  
Donald Dorman ◽  
Khalid Shahzad
Keyword(s):  
Nitrogen Doping ◽  
Exciton Peak ◽  
Type Conversion ◽  
Acceptor Pair ◽  
Ammonia Gas ◽  
Nitrogen Doped ◽  
Capacitance Voltage ◽  
Low Pressure Mocvd ◽  
Donor Acceptor ◽  
P Type

ABSTRACTWe have obtained p-type zinc selenide films by nitrogen doping combined with a post growth anneal. These films were grown on <100> gallium arsenide substrates using a low-pressure MOCVD process. Ammonia gas was used as the source for nitrogen. The as-grown films were annealed and then studied by photoluminescence (PL) and capacitance-voltage (CV) techniques. The PL data is dominated by the acceptor-bound exciton peak and donor-acceptor pair spectrum associated with the nitrogen acceptor. The C-V data shows that the films are p-type, with the highest measured net acceptor concentration of 3×1016/cm3.

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