In-Situ Doped Polycrystalline Silicon Deposited by Rapid Thermal Chemical Vapor Deposition Using Tertiarybutylphosphine

1990 ◽  
Vol 182 ◽  
Author(s):  
Jimmy C. Liao ◽  
Ki-Bum Kim ◽  
Philippe Maillot
Keyword(s):  
Vapor Deposition ◽  
Deposition Temperature ◽  
Polycrystalline Silicon ◽  
Deposition Time ◽  
Surface Adsorption ◽  
Chemical Vapor ◽  
Thermal Chemical Vapor Deposition ◽  
Silicon Crystals ◽  
Polysilicon Layer

AbstractThe effects of using tertiarybutylphosphine (TBP) as a source of phosphorus dopants during polycrystalline silicon (polysilicon) deposition in a rapid thermal processor (RTP) was investigated using TEM, SIMS, spectrophotometry, and 4-point probe analysis. It was found that the introduction ot TBP significantly inhibited the deposition of polysilicon on silicon dioxide, but only slightly reduced the growth rate of polysilicon on polysilicon. The introduction of TBP during the last 20% of the deposition time formed a thin phosphorus-rich layer on the top surface. Adsorption of the phosphorus was found to be gas-transport-limited. Incorporation of the dopant into the rest of the polysilicon layer was accomplished with an in-situ anneal (RTA) in nitrogen, resulting in a resistivity as low as 720 μΩ-cm.The grain size of the polysilicon was found to increase with deposition temperature, however was not affected by the introduction of the dopant, or any subsequent anneal. It ispostulated that unincorporated phosphorus, and oxygen and carbon in the grain boundariesprevent the combination and growth of silicon crystals.

Rapid Thermal Chemical Vapor Deposition of Polycrystalline Silicon-Germanium Films on SiO2 and Their Properties

1995 ◽  
Vol 403 ◽  
Author(s):  
V. Z-Q Li ◽  
M. R. Mirabedini ◽  
R. T. Kuehn ◽  
D. Gladden ◽  
D. Batchelor ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Germanium ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Grain Structure ◽  
Germanium Content ◽  
Thermal Chemical Vapor Deposition ◽  
Nucleation Sites

AbstractIn this work, polycrystalline SiGe has been viewed as an alternative gate material to polysilicon in single wafer processing for the deep submicrometer VLSI applications. We studied deposition of the silicon-germanium (SiGe) films with different germanium concentrations (up to 85%) on SiO2 in a rapid thermal chemical vapor deposition reactor using GeH4 and SiH4/H2 gas mixture with the temperature ranging from 550°C to 625°C. Since the SiGe RTCVD process is selective toward oxide and does not form nucleation sites on the oxide easily, an in-situ polysilicon flash technique is used to provide the necessary nucleation sites for the deposition of SiGe films with high germanium content. It was observed that with the in-situ polysilicon flash as a pre-nucleation seed, the SiGe deposited on SiO2 forms a continuous polycrystalline layer. Polycrystalline SiGe films of about 2000Å in thickness have a columnar grain structure with a grain size of approximately 1000Å. Compositional analyses from Auger Electron Spectroscopy (AES) and Rutherford backscattering (RBS) show that the high germanium incorporation in the SiGe films has a weak dependence on the deposition temperature. It is also noted that the germanium content across the film thickness is fairly constant which is a critical factor for the application of SiGe films as the gate material. Lastly, we found that the surface morphology of SiGe films become smoother at lower deposition temperature.

Rapid Thermal Chemical Vapor Deposition of Titanium Nitride for Barrier Application

1994 ◽  
Vol 342 ◽  
Author(s):  
B. Fröschle ◽  
R. Leutenecker ◽  
U. Cao-Minh ◽  
P. Ramm
Keyword(s):  
Chemical Vapor Deposition ◽  
Titanium Nitride ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Specific Resistivity ◽  
Thermal Chemical Vapor Deposition ◽  
Anneal Temperature

ABSTRACTToday there are many investigations of titanium nitride (TiN) deposition as diffusion barriers in microelectronics, especially with Chemical Vapor Deposition (CVD) techniques. In our newly developed Rapid Thermal CVD (RTCVD) process, we combine the conventional LPCVD process of TiN using titanium (IV) chloride and ammonia with the advantages of a RTCVD reactor. With regard to the ability of fast temperature change especially to reach the anneal temperature and to cool down to room temperature in the annealing ambient, it is possible to perform the entire processing sequence within one single processing chamber. The influences of deposition temperature, as well as the effects of the temperature during a subsequent in situ anneal step on the properties of the layers is analyzed. TiN layers with a specific resistivity as low as 250 μΩ-cm even at deposition temperatures of 450 °C are obtained. The resistivity of the layers and the chlorine content is nearly half of the films without an anneal step. The capability of these layers for ULSI application is shown by depositing TiN in submicron contact holes with a step coverage of nearly 100 %.

Rapid thermal chemical vapor deposition of in-situ boron doped polycrystalline SIxGe1-x

1992 ◽  
Vol 21 (1) ◽  
pp. 61-64 ◽  
Author(s):  
M. Sanganeria ◽  
D. T. Grider ◽  
M. C. öztürk ◽  
J. J. Wortman
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thermal Chemical Vapor Deposition ◽  
Boron Doped

Material Reliability of Low-Temperature Boron Deposition for PureB Silicon Photodiode Fabrication

MRS Advances ◽  
2018 ◽  
Vol 3 (57-58) ◽  
pp. 3397-3402 ◽  
Author(s):  
L.K. Nanver ◽  
K. Lyon ◽  
X. Liu ◽  
J. Italiano ◽  
J. Huffman
Keyword(s):  
High Temperature ◽  
Layer Thickness ◽  
Vapor Deposition ◽  
Dark Current ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Silicon Photodiode ◽  
In Situ Methods ◽  
Deposition Conditions

ABSTRACTThe chemical-vapor deposition conditions for the growth of pure boron (PureB) layers on silicon at temperatures as low as 400°C were investigated with the purpose of optimizing photodiodes fabricated with PureB anodes for minimal B-layer thickness, low dark current and chemical robustness. The B-deposition is performed in a commercially-available Si epitaxial reactor from a diborane precursor. In-situ methods commonly used to improve the cleanliness of the Si surface before deposition are tested for a deposition temperature of 450°C and PureB layer thickness of 3 nm. Specifically, high-temperature baking in hydrogen, and exposure to HCl are tested. Both material analysis and electrical diode characterization indicate that these extra cleaning steps degrade the properties of the PureB layer and the fabricated diodes.

DIRECTED GROWTH OF SINGLE-WALLED CARBON NANOTUBES

2002 ◽  
Vol 01 (03n04) ◽  
pp. 197-204 ◽  
Author(s):  
LANCE DELZEIT ◽  
RAMSEY STEVENS ◽  
CATTIEN NGUYEN ◽  
M. MEYYAPPAN
Keyword(s):  
Carbon Nanotubes ◽  
Vapor Deposition ◽  
Horizontal Plane ◽  
Chemical Vapor ◽  
Single Walled Carbon Nanotubes ◽  
Thermal Chemical Vapor Deposition ◽  
Single Walled Carbon ◽  
Directed Growth ◽  
Walled Carbon Nanotubes

Single-walled carbon nanotubes (SWNTs) are grown by thermal chemical vapor deposition at 900°C using methane. Application of an electric field (0.4 V/μm) in situ during the growth process results in directed growth of SWNTs on a horizontal plane bridging a distance as long as 25 μm. This approach is useful in the fabrication of nanotube based transistors.

Improvement of crystallinity of epitaxial Si1−xGex films with SiH4 treatment in in-situ rapid thermal chemical vapor deposition

1992 ◽  
Vol 60-61 ◽  
pp. 597-601
Author(s):  
Kinya Ashikaga ◽  
Morifumi Ohno ◽  
Toshiyuki Nakamura ◽  
Hisashi Fukuda ◽  
Seigo Ohno
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thermal Chemical Vapor Deposition

A Novel Implantation Free Raised Source/Drain Mosfet Process Using Selective Rapid Thermal Chemical Vapor Deposition Of In-Situ Boron Doped SixGe1-x

1993 ◽  
Vol 303 ◽  
Author(s):  
Xiaowei Ren ◽  
Mehmet C. Öztürk ◽  
Douglas T. Grider ◽  
Mahesh Sanganeria ◽  
Stanton Ashburn
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Sacrificial Layer ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
Doping Profile ◽  
Mos Transistors ◽  
Thermal Chemical Vapor Deposition ◽  
Boron Doped

ABSTRACTIn this paper, we report electrical characterization of raised source/drain MOS transistors fabricated using selectively deposited, in-situ boron doped SixGe1-x as a solid diffusion source to form the source/drain junctions. The alloy can be deposited with an enhanced selectivity at temperatures as low as 600°C resulting in an abrupt doping profile at the SixGe1-x/Si interface. After deposition, junctions are formed by diffusion of boron from the deposited layer into the silicon substrate. The selectively deposited alloy can serve as a sacrificial layer for self-aligned silicide formation elimintaing the problem of silicon consumption in the substrate. In this work, selective depositions were performed in a typical cold-walled, lamp heated rapid thermal chemical vapor deposition (RTCVD) system at ∼ 610 °C using SiH2C12, GeH4 and B2H6 as the reactive gases. Using this process, MOS transistors with effective channel lengths down to 0.45 gtm were successfully fabricated.

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