Material Reliability of Low-Temperature Boron Deposition for PureB Silicon Photodiode Fabrication

MRS Advances ◽  
2018 ◽  
Vol 3 (57-58) ◽  
pp. 3397-3402 ◽  
Author(s):  
L.K. Nanver ◽  
K. Lyon ◽  
X. Liu ◽  
J. Italiano ◽  
J. Huffman
Keyword(s):  
High Temperature ◽  
Layer Thickness ◽  
Vapor Deposition ◽  
Dark Current ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Silicon Photodiode ◽  
In Situ Methods ◽  
Deposition Conditions

ABSTRACTThe chemical-vapor deposition conditions for the growth of pure boron (PureB) layers on silicon at temperatures as low as 400°C were investigated with the purpose of optimizing photodiodes fabricated with PureB anodes for minimal B-layer thickness, low dark current and chemical robustness. The B-deposition is performed in a commercially-available Si epitaxial reactor from a diborane precursor. In-situ methods commonly used to improve the cleanliness of the Si surface before deposition are tested for a deposition temperature of 450°C and PureB layer thickness of 3 nm. Specifically, high-temperature baking in hydrogen, and exposure to HCl are tested. Both material analysis and electrical diode characterization indicate that these extra cleaning steps degrade the properties of the PureB layer and the fabricated diodes.

Rapid Thermal Chemical Vapor Deposition of Polycrystalline Silicon-Germanium Films on SiO2 and Their Properties

1995 ◽  
Vol 403 ◽  
Author(s):  
V. Z-Q Li ◽  
M. R. Mirabedini ◽  
R. T. Kuehn ◽  
D. Gladden ◽  
D. Batchelor ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Germanium ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Grain Structure ◽  
Germanium Content ◽  
Thermal Chemical Vapor Deposition ◽  
Nucleation Sites

AbstractIn this work, polycrystalline SiGe has been viewed as an alternative gate material to polysilicon in single wafer processing for the deep submicrometer VLSI applications. We studied deposition of the silicon-germanium (SiGe) films with different germanium concentrations (up to 85%) on SiO2 in a rapid thermal chemical vapor deposition reactor using GeH4 and SiH4/H2 gas mixture with the temperature ranging from 550°C to 625°C. Since the SiGe RTCVD process is selective toward oxide and does not form nucleation sites on the oxide easily, an in-situ polysilicon flash technique is used to provide the necessary nucleation sites for the deposition of SiGe films with high germanium content. It was observed that with the in-situ polysilicon flash as a pre-nucleation seed, the SiGe deposited on SiO2 forms a continuous polycrystalline layer. Polycrystalline SiGe films of about 2000Å in thickness have a columnar grain structure with a grain size of approximately 1000Å. Compositional analyses from Auger Electron Spectroscopy (AES) and Rutherford backscattering (RBS) show that the high germanium incorporation in the SiGe films has a weak dependence on the deposition temperature. It is also noted that the germanium content across the film thickness is fairly constant which is a critical factor for the application of SiGe films as the gate material. Lastly, we found that the surface morphology of SiGe films become smoother at lower deposition temperature.

Microstructure and deposition kinetics of Nb prepared by chemical vapor deposition

2018 ◽  
Vol 32 (22) ◽  
pp. 1850257 ◽  
Author(s):  
Yan Wei ◽  
Da Wei Zhang ◽  
Jun Wang ◽  
Hong Zhong Cai ◽  
Xu Xiang Zhang ◽  
...  
Keyword(s):  
Grain Size ◽  
Chemical Vapor Deposition ◽  
High Temperature ◽  
Low Temperature ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Deposition Kinetics ◽  
Hydrogen Flow

The deposition kinetics and microstructure of chemical vapor deposition (CVD) of Nb on the Mo substrate at different deposition variables is investigated. The morphology of CVD Nb is columnar, it exhibits a strong preferred orientation and its growth direction is perpendicular to the substrate surface, the deposition rate and grain size increased with the increase of deposition temperature. The deposition rate conforms to the Arrhenius formula, the activation energy [Formula: see text] at high temperature and low temperature is 0.85 kJ/mol and 7.2 kJ/mol, respectively. The rate-limiting step for CVD Nb at high temperature is chemical reaction step, whereas that is the mass transport step at low temperature. Chlorination temperature has a weak influence on deposition rate and grain structure, the deposition rate and grain size of CVD Nb increased with the increase of the chlorine flow and hydrogen flow, the maximum deposition rate is [Formula: see text], thus, the optimum deposition temperature is 1200[Formula: see text]C, chlorination temperature is 350[Formula: see text]C, hydrogen flow is 400 ml, chlorine flow is 200 ml.

In-Situ Doped Polycrystalline Silicon Deposited by Rapid Thermal Chemical Vapor Deposition Using Tertiarybutylphosphine

1990 ◽  
Vol 182 ◽  
Author(s):  
Jimmy C. Liao ◽  
Ki-Bum Kim ◽  
Philippe Maillot
Keyword(s):  
Vapor Deposition ◽  
Deposition Temperature ◽  
Polycrystalline Silicon ◽  
Deposition Time ◽  
Surface Adsorption ◽  
Chemical Vapor ◽  
Thermal Chemical Vapor Deposition ◽  
Silicon Crystals ◽  
Polysilicon Layer

AbstractThe effects of using tertiarybutylphosphine (TBP) as a source of phosphorus dopants during polycrystalline silicon (polysilicon) deposition in a rapid thermal processor (RTP) was investigated using TEM, SIMS, spectrophotometry, and 4-point probe analysis. It was found that the introduction ot TBP significantly inhibited the deposition of polysilicon on silicon dioxide, but only slightly reduced the growth rate of polysilicon on polysilicon. The introduction of TBP during the last 20% of the deposition time formed a thin phosphorus-rich layer on the top surface. Adsorption of the phosphorus was found to be gas-transport-limited. Incorporation of the dopant into the rest of the polysilicon layer was accomplished with an in-situ anneal (RTA) in nitrogen, resulting in a resistivity as low as 720 μΩ-cm.The grain size of the polysilicon was found to increase with deposition temperature, however was not affected by the introduction of the dopant, or any subsequent anneal. It ispostulated that unincorporated phosphorus, and oxygen and carbon in the grain boundariesprevent the combination and growth of silicon crystals.

Effects of Deposition Temperature and Film Thickness on the Structural, Electrical, and Optical Properties of Germanium Thin Films

2002 ◽  
Vol 715 ◽  
Author(s):  
William B. Jordan ◽  
Sigurd Wagner
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Film Thickness ◽  
Vapor Deposition ◽  
Electrical Transport ◽  
Deposition Temperature ◽  
High Mobility ◽  
Chemical Vapor ◽  
Electrical Transport Properties ◽  
Electrical And Optical Properties

AbstractGermanium films deposited on glass by plasma-enhanced chemical vapor deposition from germane and hydrogen grow in the structure succession of amorphous-nanocrystallineamorphous-nanocrystalline as the substrate temperature is raised from 30°C to 310°C. We ascribe the phase formation, from low to high temperature, to a sequence of low to high mobility of Ge growth species on a surface that is hydrogenated at low temperature but not hydrogenated at high temperature. We report some structural, optical, and electrical transport properties of Ge films as a function of deposition temperature and film thickness.

scholarly journals Модификация соотношения sp^2/sp^3-гибридного углерода в PECVD пленках DLC

2020 ◽  
Vol 54 (9) ◽  
pp. 855
Author(s):  
П.А. Юнин ◽  
А.И. Охапкин ◽  
М.Н. Дроздов ◽  
С.А. Королев ◽  
Е.А. Архипова ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Vapor Deposition ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Ex Situ ◽  
Diamond Like Carbon ◽  
Crystal Silicon ◽  
Inductively Coupled ◽  
In Situ Methods

Abstract It is known that diamond-like carbon layers consist of carbon components with sp ^2 (graphite) and sp ^3 (diamond) hybridizations of electron orbitals. The quantitative ratio between sp ^2 and sp ^3 components has a profound effect on the structural, morphological, optical, electrical, and mechanical properties of the films. In this study, the possibility of controlling the fractions of sp ^2- and sp ^3-hybridized carbon in diamond-like films produced by plasma-enhanced chemical-vapor deposition onto single-crystal silicon and diamond substrates is analyzed. In-situ methods of controlling the fraction of the sp ^3 component by varying the power of the capacitive and inductively coupled discharges directly during production of the film and ex-situ methods, in which use is made of thermal annealing and the application of an electric field, are demonstrated.

Rapid Thermal Chemical Vapor Deposition of Titanium Nitride for Barrier Application

1994 ◽  
Vol 342 ◽  
Author(s):  
B. Fröschle ◽  
R. Leutenecker ◽  
U. Cao-Minh ◽  
P. Ramm
Keyword(s):  
Chemical Vapor Deposition ◽  
Titanium Nitride ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Specific Resistivity ◽  
Thermal Chemical Vapor Deposition ◽  
Anneal Temperature

ABSTRACTToday there are many investigations of titanium nitride (TiN) deposition as diffusion barriers in microelectronics, especially with Chemical Vapor Deposition (CVD) techniques. In our newly developed Rapid Thermal CVD (RTCVD) process, we combine the conventional LPCVD process of TiN using titanium (IV) chloride and ammonia with the advantages of a RTCVD reactor. With regard to the ability of fast temperature change especially to reach the anneal temperature and to cool down to room temperature in the annealing ambient, it is possible to perform the entire processing sequence within one single processing chamber. The influences of deposition temperature, as well as the effects of the temperature during a subsequent in situ anneal step on the properties of the layers is analyzed. TiN layers with a specific resistivity as low as 250 μΩ-cm even at deposition temperatures of 450 °C are obtained. The resistivity of the layers and the chlorine content is nearly half of the films without an anneal step. The capability of these layers for ULSI application is shown by depositing TiN in submicron contact holes with a step coverage of nearly 100 %.

Characterization of Silicon Carbide Grown on RB-SiC by Chemical Vapor Deposition

2010 ◽  
Vol 434-435 ◽  
pp. 499-501 ◽  
Author(s):  
Fan Tao Meng ◽  
Shan Yi Du ◽  
Gui Shan Tian ◽  
Yu Min Zhang
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sic Whiskers ◽  
Deposition Conditions

Silicon carbide is one of the best materials for satellite mirror and chemical vapor deposition (CVD) is an effective method of preparing SiC whiskers and films. In this paper, SiC whiskers or films were deposited on substrates of RB-SiC in an upright chemical vapor deposition furnace of Φ150mm × 450 mm with methyltrichloride silicane (MTS) as precursor gas and H2 as carrier gas under dilute gases of different H2/Ar ratio and different deposition temperature between 1050°C and 1150°C. The morphology and composition of the CVD-SiC grown on RB-SiC substrate were determined by scanning electron microscope (SEM) and X-ray diffraction (XRD) respectively. As a result, whisker-like, worm-like or ball-like SiC can be respectively obtained dependent on different deposition conditions such as H2/Ar ratio and deposition temperature, and the composition of the productions are determined as β-SiC by XRD. Furthermore, the deposition mechanisms of different morphologies of SiC are introduced.

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

1995 ◽  
Vol 53 ◽  
pp. 256-257
Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Effect ◽  
Line Drawing ◽  
Chemical Vapor ◽  
Environmental Cell ◽  
Engineering Changes ◽  
Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

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