Rapid Thermal Chemical Vapor Deposition of Titanium Nitride for Barrier Application

1994 ◽  
Vol 342 ◽  
Author(s):  
B. Fröschle ◽  
R. Leutenecker ◽  
U. Cao-Minh ◽  
P. Ramm
Keyword(s):  
Chemical Vapor Deposition ◽  
Titanium Nitride ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Specific Resistivity ◽  
Thermal Chemical Vapor Deposition ◽  
Anneal Temperature

ABSTRACTToday there are many investigations of titanium nitride (TiN) deposition as diffusion barriers in microelectronics, especially with Chemical Vapor Deposition (CVD) techniques. In our newly developed Rapid Thermal CVD (RTCVD) process, we combine the conventional LPCVD process of TiN using titanium (IV) chloride and ammonia with the advantages of a RTCVD reactor. With regard to the ability of fast temperature change especially to reach the anneal temperature and to cool down to room temperature in the annealing ambient, it is possible to perform the entire processing sequence within one single processing chamber. The influences of deposition temperature, as well as the effects of the temperature during a subsequent in situ anneal step on the properties of the layers is analyzed. TiN layers with a specific resistivity as low as 250 μΩ-cm even at deposition temperatures of 450 °C are obtained. The resistivity of the layers and the chlorine content is nearly half of the films without an anneal step. The capability of these layers for ULSI application is shown by depositing TiN in submicron contact holes with a step coverage of nearly 100 %.

Rapid Thermal Chemical Vapor Deposition of Polycrystalline Silicon-Germanium Films on SiO2 and Their Properties

1995 ◽  
Vol 403 ◽  
Author(s):  
V. Z-Q Li ◽  
M. R. Mirabedini ◽  
R. T. Kuehn ◽  
D. Gladden ◽  
D. Batchelor ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Germanium ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Grain Structure ◽  
Germanium Content ◽  
Thermal Chemical Vapor Deposition ◽  
Nucleation Sites

AbstractIn this work, polycrystalline SiGe has been viewed as an alternative gate material to polysilicon in single wafer processing for the deep submicrometer VLSI applications. We studied deposition of the silicon-germanium (SiGe) films with different germanium concentrations (up to 85%) on SiO2 in a rapid thermal chemical vapor deposition reactor using GeH4 and SiH4/H2 gas mixture with the temperature ranging from 550°C to 625°C. Since the SiGe RTCVD process is selective toward oxide and does not form nucleation sites on the oxide easily, an in-situ polysilicon flash technique is used to provide the necessary nucleation sites for the deposition of SiGe films with high germanium content. It was observed that with the in-situ polysilicon flash as a pre-nucleation seed, the SiGe deposited on SiO2 forms a continuous polycrystalline layer. Polycrystalline SiGe films of about 2000Å in thickness have a columnar grain structure with a grain size of approximately 1000Å. Compositional analyses from Auger Electron Spectroscopy (AES) and Rutherford backscattering (RBS) show that the high germanium incorporation in the SiGe films has a weak dependence on the deposition temperature. It is also noted that the germanium content across the film thickness is fairly constant which is a critical factor for the application of SiGe films as the gate material. Lastly, we found that the surface morphology of SiGe films become smoother at lower deposition temperature.

Rapid thermal chemical vapor deposition of in-situ boron doped polycrystalline SIxGe1-x

1992 ◽  
Vol 21 (1) ◽  
pp. 61-64 ◽  
Author(s):  
M. Sanganeria ◽  
D. T. Grider ◽  
M. C. öztürk ◽  
J. J. Wortman
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thermal Chemical Vapor Deposition ◽  
Boron Doped

Improvement of crystallinity of epitaxial Si1−xGex films with SiH4 treatment in in-situ rapid thermal chemical vapor deposition

1992 ◽  
Vol 60-61 ◽  
pp. 597-601
Author(s):  
Kinya Ashikaga ◽  
Morifumi Ohno ◽  
Toshiyuki Nakamura ◽  
Hisashi Fukuda ◽  
Seigo Ohno
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thermal Chemical Vapor Deposition

Luminescence Processes in Si1-xGex/Si Heterostructures Grown by Chemical Vapor Deposition

1993 ◽  
Vol 298 ◽  
Author(s):  
J.C. Sturm ◽  
X. Xiao ◽  
Q. Mi ◽  
L.C. Lenchyshyn ◽  
M.L.W. Thewalt
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Low Temperatures ◽  
Radiative Recombination ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Electron Hole ◽  
Strained Si ◽  
Thermal Chemical Vapor Deposition ◽  
Shallow Impurity

AbstractWell-resolved band-edge exciton photoluminescence (PL) has been observed in strained Si1-xGex. heterostructures grown on Si(100) by rapid thermal chemical vapor deposition. The luminescence is due to shallow-impurity bound excitons at low temperatures (under 20K) and at higher temperatures is due to free excitons or electron-hole plasmas, depending on the pump power. The luminescence can also be electrically pumped, with both the electroluminescence and PL persisting above room temperature in samples with a sufficient bandgap offset. Loss of carrier confinement and subsequent non-radiative recombination outside the Si1-xGex. is found to be the reason for reduced PL and EL at high temperature.

A Novel Implantation Free Raised Source/Drain Mosfet Process Using Selective Rapid Thermal Chemical Vapor Deposition Of In-Situ Boron Doped SixGe1-x

1993 ◽  
Vol 303 ◽  
Author(s):  
Xiaowei Ren ◽  
Mehmet C. Öztürk ◽  
Douglas T. Grider ◽  
Mahesh Sanganeria ◽  
Stanton Ashburn
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Sacrificial Layer ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
Doping Profile ◽  
Mos Transistors ◽  
Thermal Chemical Vapor Deposition ◽  
Boron Doped

ABSTRACTIn this paper, we report electrical characterization of raised source/drain MOS transistors fabricated using selectively deposited, in-situ boron doped SixGe1-x as a solid diffusion source to form the source/drain junctions. The alloy can be deposited with an enhanced selectivity at temperatures as low as 600°C resulting in an abrupt doping profile at the SixGe1-x/Si interface. After deposition, junctions are formed by diffusion of boron from the deposited layer into the silicon substrate. The selectively deposited alloy can serve as a sacrificial layer for self-aligned silicide formation elimintaing the problem of silicon consumption in the substrate. In this work, selective depositions were performed in a typical cold-walled, lamp heated rapid thermal chemical vapor deposition (RTCVD) system at ∼ 610 °C using SiH2C12, GeH4 and B2H6 as the reactive gases. Using this process, MOS transistors with effective channel lengths down to 0.45 gtm were successfully fabricated.

The effects of deposition temperature on properties of SiO2 films fabricated by a new electron cyclotron resonance microwave plasma-enhanced chemical-vapor deposition process

1991 ◽  
Vol 69 (3-4) ◽  
pp. 165-169 ◽  
Author(s):  
T. T. Chau ◽  
S. R. Mejia ◽  
K. C. Kao
Keyword(s):  
Chemical Vapor Deposition ◽  
Leakage Current ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Deposition Temperature ◽  
Room Temperature ◽  
Electron Cyclotron Resonance ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Electron Cyclotron

Silicon dioxide (SiO2) films were deposited by a new electron cyclotron resonance (ECR) microwave plasma enhanced chemical vapor deposition (PECVD) process at various deposition temperatures ranging from room temperaure (~25 °C) to 300 °C. The deposition rate increases with increasing deposition temperature and tends to become saturated as the deposition temperature approaches 250 °C, in contrast to the SiO2 films fabricated by the conventional ECR microwave PECVD process. The Fourier transform infrared results provide no evidence of hydrogen incorporation in the SiO2 films even when they were deposited at room temperature. Films deposited at temperatures higher than 270 °C exhibit an excellent electrical integrity that is comparable with high-quality SiO2 films grown thermally at 1000 °C. Films deposited at room temperature have a slightly higher refractive index and also high-leakage current though the films appear as good as those deposited at 300 °C. As the deposition temperature is increased, both the shoulder height of the Si—O stretching band and the leakage current decrease. The correlation between the film properties and the film growth mechanism is also discussed.

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