Chemical vapor deposition of undoped and in-situ boron- and arsenic-doped epitaxial and polycrystalline silicon films grown using silane at reduced pressure
1982 ◽
Vol 56
(2)
◽
pp. 313-323
◽
1999 ◽
Vol 337
(1-2)
◽
pp. 248-252
◽
1997 ◽
Vol 144
(11)
◽
pp. 3952-3958
◽
2001 ◽
Vol 40
(Part 2, No. 11B)
◽
pp. L1207-L1210
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1990 ◽
Vol 137
(11)
◽
pp. 3666-3674
◽
1995 ◽
Vol 86
(1-4)
◽
pp. 600-603
◽