Integrated Titanium Silicide Processing

1990 ◽  
Vol 181 ◽  
Author(s):  
Jaim Nulman
Keyword(s):  
Sheet Resistance ◽  
Silicon Surface ◽  
Processing System ◽  
Ambient Air ◽  
Titanium Silicide ◽  
Air Exposure ◽  
Processing Window ◽  
Wafer Cleaning ◽  
Annealing Step ◽  
Cleaning Technology

ABSTRACTThe processing of titanium silicide in a multichamber processing system is described. Three processes are included: wafer cleaning, Ti deposition, and annealing. The results are compared to wafers processed in a conventional way with exposure to ambient air between Ti deposition and the annealing step. TEM, RBS and sheet resistance measurements indicate that the films processed without exposure to ambient air have thicker and purer TiN layers as compared to the films with air exposure. Furthermore, integration allows for a wider processing window for the first annealing step. The use of reactive cleaning chemistry prior to Ti deposition results in a smooth silicon surface and therefore uniform silicidation as compared to inert cleaning technology, where redeposit of etched material occurs.

Investigation of Pre-Tungsten Silicide Deposition Wet Chemical Processing

1995 ◽  
Vol 386 ◽  
Author(s):  
A. Philipossian ◽  
M. Moinpour ◽  
R. Wilkinson ◽  
V. H. C. Watt
Keyword(s):  
Contact Angle ◽  
Polycrystalline Silicon ◽  
Silicon Surface ◽  
Morphological Characteristics ◽  
Ambient Air ◽  
Contact Angles ◽  
Silicon Surfaces ◽  
Native Oxide ◽  
Initial Contact ◽  
Air Exposure

ABSTRACTRemoving the native oxide from the poly-Si surface prior to WSix deposition is essential for achieving high quality silicides as well as sufficient film adhesion, particularly after high temperature anneal or oxidation. Contact angle studies have been used to determine initial and time-dependent surface characteristics of several types of silicon surfaces following immersions in HF-based etchants for varying amounts of time. The morphological characteristics of the surfaces before and after exposure to etchants, as well as the relative etch rates and wetting capabilities of the etchants have been used to explain the following results: With respect to initial contact angle studies, the implanted & annealed polycrystalline silicon surface has the lowest contact angle followed by polycrystalline and monocrystalline surfaces. Longer immersion times yield lower initial contact angles. The 0.1% lightly-buffered HF solution results in the highest contact angle followed by the 1% buffered HF solution with surfactant, and the 1% HF solution. With respect to contact angle changes during ambient air exposure time, the asdeposited polycrystalline silicon surface is most stable followed by monocrystalline, and implanted & annealed polycrystalline silicon surfaces. Longer immersion times improve surface stability while the 0.1% lightly-buffered HF solution results in the most stable surface followed by the 1% buffered HF solution with surfactant, and the 1% HF solution.

Effect of a Ti-capped and Ti-mediated Layer on Co Silicide Formation

2002 ◽  
Vol 716 ◽  
Author(s):  
G.Z. Pan ◽  
E.W. Chang ◽  
Y. Rahmat-Samii
Keyword(s):  
Electron Diffraction ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Diffusion Barrier ◽  
Silicide Formation ◽  
Plan View ◽  
Processing Window

AbstractWe comparatively studied the formation of ultra thin Co silicides, Co2Si, CoSi and CoSi2, with/without a Ti-capped and Ti-mediated layer by using rapid thermal annealing in a N2 ambient. Four-point-probe sheet resistance measurements and plan-view electron diffraction were used to characterize the silicides as well as the epitaxial characteristics of CoSi2 with Si. We found that the formation of the Co silicides and their existing duration are strongly influenced by the presence of a Ti-capped and Ti-mediated layer. A Ti-capped layer promotes significantly CoSi formation but suppresses Co2Si, and delays CoSi2, which advantageously increases the silicidation-processing window. A Ti-mediated layer acting as a diffusion barrier to the supply of Co suppresses the formation of both Co2Si and CoSi but energetically favors directly forming CoSi2. Plan-view electron diffraction studies indicated that both a Ti-capped and Ti-mediated layer could be used to form ultra thin epitaxial CoSi2 silicide.

scholarly journals Development of Land Use Regression Model for Seasonal Variation of Nitrogen Dioxide (NO2) in Lahore, Pakistan

2021 ◽  
Vol 13 (9) ◽  
pp. 4933
Author(s):  
Saimar Pervez ◽  
Ryuta Maruyama ◽  
Ayesha Riaz ◽  
Satoshi Nakai
Keyword(s):  
Land Use ◽  
Air Pollution ◽  
Regression Model ◽  
Urban Areas ◽  
Industrial Development ◽  
Ambient Air ◽  
Ambient Air Pollution ◽  
Land Use Classification ◽  
Land Use Regression ◽  
Air Exposure

Ambient air pollution and its exposure has been a worldwide issue and can increase the possibility of health risks especially in urban areas of developing countries having the mixture of different air pollution sources. With the increase in population, industrial development and economic prosperity, air pollution is one of the biggest concerns in Pakistan after the occurrence of recent smog episodes. The purpose of this study was to develop a land use regression (LUR) model to provide a better understanding of air exposure and to depict the spatial patterns of air pollutants within the city. Land use regression model was developed for Lahore city, Pakistan using the average seasonal concentration of NO2 and considering 22 potential predictor variables including road network, land use classification and local specific variable. Adjusted explained variance of the LUR models was highest for post-monsoon (77%), followed by monsoon (71%) and was lowest for pre-monsoon (70%). This is the first study conducted in Pakistan to explore the applicability of LUR model and hence will offer the application in other cities. The results of this study would also provide help in promoting epidemiological research in future.

Experimental Investigation on Contact Angle of Sintered Copper Powder Wick

2016 ◽  
Vol 819 ◽  
pp. 575-579 ◽  
Author(s):  
Nandy Putra ◽  
Iwan Setyawan ◽  
Dimas Raditya
Keyword(s):  
Contact Angle ◽  
Copper Powder ◽  
High Speed ◽  
Ambient Air ◽  
Video Camera ◽  
High Heat ◽  
High Heat Flux ◽  
Powder Particle Size ◽  
Air Exposure ◽  
Sintered Copper

Heat pipes are widely used in electronic cooling and other applications that require efficient transport or spreading of heat from local sources of high heat flux. One factor that most affect the performance of this device is the wetting properties of the wick material, whereby a hydrophilic wick material is required to transport the liquid from the evaporator to the condenser. The performance of heat pipe will decrease when the wick surface becomes hydrophobic as indicated by changes in its contact angle (CA). This study aims to determine the effect of ambient air exposure on the wettability of wick material. Wettability for a surface by a certain liquid can be shown by measuring the contact angle of liquid droplets on the surface. In this experiment, the contact angle was captured using a high speed video camera followed by image processing and then measured using Image J software. The surface of the sample/wick is a sintered copper powder which in this study through a process of forming or compaction by various parameters such as powder particle size, compacting pressure and sintering temperature. From the results of this study was found that the longer wicks were exposed in the ambient air, the contact angle of the liquid on the wick surface will be getting increased. After 7 days were contaminated on the ambient air, then all samples have been turned into hydrophobic, CA>90°.

CITI-SENSE: Ostrava, Czech Republic – European hot spot for ambient air exposure to benzo[a]pyrene

2013 ◽  
Vol 2013 (1) ◽  
pp. 5673
Author(s):  
Radim Sram ◽  
Pavel Rosssner ◽  
Andrea Rossnerova ◽  
Vlasta Svecova ◽  
Jan Topinka
Keyword(s):  
Czech Republic ◽  
Hot Spot ◽  
Ambient Air ◽  
Air Exposure

scholarly journals Comparison of sub-micro/nano structure formation on polished silicon surface irradiated by nanosecond laser beam in ambient air and distilled water

2013 ◽  
Vol 31 (3) ◽  
pp. 465-473 ◽  
Author(s):  
Maliheh Sobhani ◽  
Mohammad Hossein Mahdieh
Keyword(s):  
Structure Formation ◽  
Silicon Surface ◽  
Laser Pulses ◽  
Ambient Air ◽  
Nanosecond Laser ◽  
Distilled Water ◽  
Nano Structure ◽  
Optical Reflectivity ◽  
Surface Cluster ◽  
Cluster Density

AbstractThis paper compares sub-micro/nano structure formation on polished silicon surface irradiated by nanosecond laser pulses in ambient air and distilled water. Surface cluster density and optical reflectivity of silicon surface (at a typical wavelength of λ = 632 nm) were studied in terms of number of laser pulses and laser fluence. The surface density and optical reflectivity give information on clusters filling factor and clusters height respectively. The results show that the values of surface cluster density and clusters height strongly depend on laser pulse numbers and interacting ambient. Comparing to air, distilled water as an interacting ambient can affect more significantly the clusters height.

Formation of Titanium Silicide by Multiple Arsenic Implantations and Ion Beam Mixing

1991 ◽  
Vol 224 ◽  
Author(s):  
Po-Ching Chen ◽  
Jian-Yang Lin ◽  
Huey-Liang Hwang
Keyword(s):  
Electron Diffraction ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
Titanium Silicide ◽  
Mixing Conditions ◽  
Cross Sectional ◽  
Ion Beam Mixing ◽  
Post Annealing

AbstractTitanium silicide was formed on the top of Si wafers by arsenic ion beam mixing and rapid thermal annealing. Three different arsenic-ion mixing conditions were examined in this work. The sheet resistance, residue As concentration post annealing and TiSi2 phase were characterized by using the* four-point probe, RBS and electron diffraction, respectively. TiSi2 of C54 phase was identified in the doubly implanted samples. The thickness of the Ti silicide and the TiSi2/Si interface were observed by the cross-sectional TEM.

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