Fabrication of Nanostructure-Based Copper Oxide Biosensor

The purpose of this paper is to give a review of the fabrication of nanostructure-based copper oxide biosensor. This paper briefly covers processes from silicon wafer cleaning, oxidation process, silicon nitride deposition, aluminum metal deposition, pattern transfer, copper oxide sol-gel preparation and coating and lastly IV testing with the results expected from the completed device.Keywords: Nanostruture, copper oxide, biosensor, sol-gel, current-voltage testing.

Megasonic Cleaning to Remove Nano-Dimensional Contaminants from Wafer Surfaces: An Analytical Study

Megasonic cleaning traditionally refers to use of acoustic fields in the 800 kHz 1 MHz range to remove contaminants adhered to surfaces immersed in liquid media. However, even fields driven by frequencies in the > 400 kHz regime exhibit virtually all characteristics of conventional megasonics. These include: unidirectional pumped flow of liquid (acoustic streaming) normal to the transducer, at velocities that scale as square of frequency; and, a near-absence of cavitational phenomena associated with ultrasonic cleaning. For the latter reason, megasonic cleaning is preferred over ultrasonics when attempting to remove contaminants from delicate, fragile, erodible or feature-rich surfaces. Silicon wafer cleaning in semiconductor manufacturing, integrated circuit cleaning, and printed circuit board cleaning have utilized megasonics (with appropriate chemistry) for several decades. The megasonic frequency offers the additional benefit of a very thin boundary layer over the immersed surface, which effectively exposes even sub-micron and nanodimensional particles to the flow of the cleaning liquid.

Influence of Ammonia Gas Ambient in IPA Drying Process of the Single Wafer Cleaning System

High-performance drying techniques using IPA (isopropyl alcohol) are widely used in the silicon wafer cleaning process. IPA-based drying techniques help prevent the formation of watermarks because they effectively displace any water remaining on a wafer surface. They are thus frequently used in the single wafer cleaning system for advanced devices in which ultra-clean process performance is required. However, as devices are becoming physically smaller, the formation of extremely small defects during cleaning has become a serious problem. It is therefore important to elucidate the mechanism of the defect formation and to take measures to prevent it for future device technologies in which small-size defects can be killer defects during production. In this paper, we performed experiments focused on the process chamber atmosphere in IPA drying of the single wafer cleaning system and describe the mechanism of the defect formation.