Tin as a Diffusion Barrier Between CoSi2 or PtSi and Aluminum

1982 ◽  
Vol 18 ◽  
Author(s):  
R. J. Schutz
Keyword(s):  
Chemical Composition ◽  
Electrical Properties ◽  
Schottky Barrier ◽  
Diffusion Barrier ◽  
Schottky Barrier Height ◽  
X Ray Diffraction ◽  
X Ray ◽  
Effective Barrier ◽  
Glancing Angle ◽  
Typical Temperature

The effectiveness of a thin (360Å) layer of reactively sputtered TiN as a diffusion barrier between aluminum and two silicides (PtSi and CoSi2) was evaluated. The chemical composition, structural phases and electrical properties of silicide/Al and silicide/TiN/Al contacts to n-type silicon were studied by Rutherford backscattering spectroscopy, glancing angle X-ray diffraction and Schottky barrier height measurements respectively. The results show that TiN is an effective barrier in these two systems up to at least 450°C, the typical temperature at which aluminum contacts are sintered.

Molecular Beam Epitaxial Growth of Nonpolar a-plane InN/ GaN Heterostructures

2012 ◽  
Vol 1396 ◽  
Author(s):  
Mohana K. Rajpalke ◽  
Thirumaleshwara N. Bhat ◽  
Basanta Roul ◽  
Mahesh Kumar ◽  
S. B. Krupanidhi
Keyword(s):  
Schottky Barrier ◽  
Molecular Beam ◽  
Schottky Barrier Height ◽  
High Energy ◽  
Scanning Electron Micrographs ◽  
X Ray Diffraction ◽  
X Ray ◽  
Molecular Beam Epitaxial ◽  
Diffraction Patterns ◽  
Molecular Beam Epitaxial Growth

ABSTRACTNonpolar a-plane InN/GaN heterostructures were grown by plasma assisted molecular beam epitaxy. The growth of nonpolar a- plane InN / GaN heterostructures were confirmed by high resolution x-ray diffraction study. Reflection high energy electron diffraction patterns show the reasonably smooth surface of a-plane GaN and island-like growth for nonpolar a-plane InN film, which is further confirmed by scanning electron micrographs. An absorption edge in the optical spectra has the energy of 0.74 eV, showing blueshifts from the fundamental band gap of 0.7 eV. The rectifying behavior of the I-V curve indicates the existence of Schottky barrier at the InN and GaN interface. The Schottky barrier height (φb) and the ideality factor (η) for the InN/GaN heterostructures found to be 0.58 eV and 2.05 respectively.

Effect of a Titanium Interlayer on the Performance of the Titanium Nitride Diffusion Barrier

1999 ◽  
Vol 563 ◽  
Author(s):  
K. Y Lu ◽  
J. S. Chen
Keyword(s):  
Sheet Resistance ◽  
Diffusion Barrier ◽  
Electrical Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Average Value ◽  
Cu Metallization ◽  
Glancing Angle ◽  
Tin Diffusion Barrier ◽  
Thermal Stability Of

AbstractWe have studied the effect of a Ti interlayer on the behavior of a TiN diffusion barrier for Al and Cu metallizations. Thermal stability of Al/Ti/TiN/<Si> and Al/TiN/<Si> samples annealed at 400–600°C for 30 min was investigated using Auger electron spectroscopy (AES), glancing angle X-ray diffraction and scanning electron microscopy (SEM). Sheet resistance was measured for electrical characterization.After annealing at 400°C and 500°C, the AI/TiN/<Si> samples exhibited the same sheet resistance as the as-deposited one, while the sheet resistances of the Al/Ti/TiN/<Si> samples increased upon annealing. After annealing at 600°C, pyramidal pits developed on the surface of the Al/TiN/<Si> sample, but not on the Al/Ti/TiN/<Si> sample. Sheet resistance measurements for the 600°C-annealed Al/TiN/<Si> sample resulted in a more scattered distribution and a higher average value than for the Al/Ti/TiN/<Si> sample. The results clearly indicate that the performance of the TiN barrier layer is significantly improved by including a thin Ti film between the TiN and the Al. The Ti interlayer also improves the TiN barrier performance for the Cu metallization system.

The Atomic Structure of the Si(111)-Pb Buried Interface Grown on the ${\rm Si}(111)\mbox{-}(\sqrt{3}\times\sqrt{3})\mbox{-}{\rm Pb}$ Reconstruction

1998 ◽  
Vol 05 (01) ◽  
pp. 163-166 ◽  
Author(s):  
P. B. Howes ◽  
K. A. Edwards ◽  
J. E. Macdonald ◽  
T. Hibma ◽  
T. Bootsman ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Atomic Structure ◽  
Schottky Barrier Height ◽  
Experimental Studies ◽  
X Ray Diffraction ◽  
Semiconductor Interface ◽  
X Ray ◽  
Buried Interfaces ◽  
Structural Differences ◽  
The Subject

The Si(111)-Pb interface is a prototypical metal-semiconductor interface and has been the subject of a number of experimental studies. The Schottky barrier height is known to depend on the initial reconstruction formed by the first monolayer of Pb atoms and we have previously shown that there are structural differences between the buried interfaces. We present surface X-ray diffraction measurements of the interface grown from the incommensurate [Formula: see text] reconstruction and show that, in contrast to the starting surface, the interface comprises the junction between unreconstructed, bulk-like Si(111) and disordered, bulk-like Pb(111). This interface is contrasted with the interface formed by growth on the Si(111)-(7 × 7)-Pb reconstruction at which the starting reconstruction is preserved.

W/Si Schottky Diodes: Effect of Metal Deposition Conditions on the Barrier Height

1994 ◽  
Vol 356 ◽  
Author(s):  
M. Mamor ◽  
E. Finkman ◽  
F. Meyer ◽  
K. Bouziane
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
X Ray Diffraction ◽  
Experimental Conditions ◽  
X Ray ◽  
Barrier Heights ◽  
P Type ◽  
Deposition Conditions

AbstractThe Schottky barrier heights (ΦB) for W/Si Schottky diodes have been determined from I–V measurements. The effects of the sputter deposition conditions of the W-films were studied. X-ray diffraction was used to examine the structure and the lattice parameters of the W-films while the stress was determined by using a profilometer from the measurement of the curvature of the substrate after metallization. The resistivity is determined by using a four-point probe. A compressive-to-tensile stress transition is associated with the transformation of the ±—W-phase into the (β—W-phase as the working gas pressure is increased. These effects, which are frequently observed, coïncide with a significant increase of the W-film resistivity and a change (△ΦB≈50 meV) in the Schottky barrier height on n-type. On the other hand, the barrier height on the p-type remains constant under all the experimental conditions investigated. These results are discussed in terms of effects of strain and structure of W-films on the work function of the W, as well as in terms of modification of the pinning position of the Fermi level or else change in the value of the Richardson constant.

Electrical Characteristics of Ti/4H-SiC Slicidation Schottky Barrier Diode

2008 ◽  
Vol 600-603 ◽  
pp. 643-646 ◽  
Author(s):  
Akimasa Kinoshita ◽  
Takashi Nishi ◽  
Takasumi Ohyanagi ◽  
Tsutomu Yatsuo ◽  
Kenji Fukuda ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Height ◽  
Annealing Temperature ◽  
Voltage Drop ◽  
Schottky Contact ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
X Ray ◽  
Current Voltage ◽  
Forward Voltage Drop

The reaction and phase formation of the Ti/SiC Schottky contact as a function of the annealing temperature (400~700oC) were investigated. The Schottky barrier height (fb) and the crystal structure of the samples annealed at the different temperature were measured by the forward current-voltage (IV) characteristics and the x-ray diffraction (XRD), respectively. XRD measurements were performed in the w-2q scan and the pole figure measurement for Ti (101) diffraction peak. The fb was changed as a function of temperature. It was concluded that the fb variation and non-uniformity of the samples annealed at 400oC, 500oC, 600 oC and 700oC was caused by changing the condition at the interface between SiC substrate and Ti. We fabricated the 600V Ti/SiC silicidation SBD annealed at 500oC for 5min. As a result, a low forward voltage drop, low reverse leakage current and stability at high temperature (200 oC) for the Ti/SiC silicidation SBD were shown.

TiB2as a Diffusion Barrier for Cu/ Metallization

1999 ◽  
Vol 563 ◽  
Author(s):  
J. L. Wang ◽  
J. S. Chen
Keyword(s):  
Sheet Resistance ◽  
Diffusion Barrier ◽  
Electrical Characterization ◽  
Sample Surface ◽  
Scanning Electron Micrographs ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cu Metallization ◽  
Glancing Angle ◽  
Scanning Electron

AbstractTiB2, films deposited by co-sputtering from a boron and a TiB, target are evaluated as the diffusion barrier for Cu metallization. Material characteristics of the TiB, films and metallurgical interactions of the Cu/TiB2/<Si> system annealed at 400−700°C for 30 min, in a 80%Ar+20%H2 flow, were investigated by glancing angle X-ray diffraction, Auger electron spectroscopy (AES), and scanning electron microscopy (SEM). Sheet resistance was measured for electrical characterization.The composition and resistivity of the sputtered TiB1 films varied with the bias applied on the substrate. To obtain a low film resistivity, a negative bias of 200V was applied during sputtering. The resulting TiB2 film is nanocrystalline with a resistivity of 300 μΩcm. After copper deposition, the Cu/TiB2/<Si> samples have a constant sheet resistance after annealing up to 600°C for 30min. The overall sheet resistance of the sample increases by five orders of magnitude after annealing at 700°C, and scanning electron micrographs reveal that the sample surface is severely deteriorated after annealing at 700°C.

Fabrication and study the effect of the laser on the properties of the compound Tl2-xHgxBa2-ySryCa2Cu3O10+δ superconductor

2018 ◽  
pp. 168
Author(s):  
A. Kareem Dahash Ali ◽  
Nihad Ali Shafeek
Keyword(s):  
Transition Temperature ◽  
Solid State ◽  
Hydrostatic Pressure ◽  
Electrical Properties ◽  
Co2 Laser ◽  
Temperature Shift ◽  
Unit Cell ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structural And Electrical Properties

This study included the fabrication of    compound (Tl2-xHgxBa2-ySryCa2Cu3O10+δ) in a manner solid state and under hydrostatic pressure ( 8 ton/cm2) and temperature annealing(850°C), and determine the effect of the laser on the structural and electrical properties elements in the compound, and various concentrations of x where (x= 0.1,0.2,0.3 ). Observed by testing the XRD The best ratio of compensation for x is 0.2 as the value of a = b = 5.3899 (A °), c = 36.21 (A °) show that the installation of four-wheel-based type and that the best temperature shift is TC= 142 K  .When you shine a CO2 laser on the models in order to recognize the effect of the laser on these models showed the study of X-ray diffraction of these samples when preparing models with different concentrations of the values ​​of x, the best ratio of compensation is 0.2 which showed an increase in the values ​​of the dimensions of the unit cell a=b = 5.3929 (A °), c = 36.238 (A°). And the best transition temperature after shedding laser is TC=144 K. 

scholarly journals Local Strain Distribution in ZnO Microstructures Visualized with Scanning Nano X‐Ray Diffraction and Impact on Electrical Properties

2021 ◽  
pp. 2100201
Author(s):  
Philipp Jordt ◽  
Stjepan B. Hrkac ◽  
Jorit Gröttrup ◽  
Anton Davydok ◽  
Christina Krywka ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Strain Distribution ◽  
Local Strain ◽  
X Ray Diffraction ◽  
X Ray

scholarly journals Photocurrent density and electrical properties of Bi0.5Na0.5TiO3-BaNi0.5Nb0.5O3 ceramics

2021 ◽  
Author(s):  
Mingqiang Zhong ◽  
Qin Feng ◽  
Changlai Yuan ◽  
Xiao Liu ◽  
Baohua Zhu ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Photovoltaic Effect ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Photocurrent Density ◽  
Open Circuit ◽  
Light Conditions ◽  
X Ray Diffraction ◽  
Solid State Method ◽  
X Ray

AbstractIn this work, the (1−x)Bi0.5Na0.5TiO3-xBaNi0.5Nb0.5O3 (BNT-BNN; 0.00 ⩽ x ⩽ 0.20) ceramics were prepared via a high-temperature solid-state method. The crystalline structures, photovoltaic effect, and electrical properties of the ceramics were investigated. According to X-ray diffraction, the system shows a single perovskite structure. The samples show the normal ferroelectric loops. With the increase of BNN content, the remnant polarization (Pr) and coercive field (Ec) decrease gradually. The optical band gap of the samples narrows from 3.10 to 2.27 eV. The conductive species of grains and grain boundaries in the ceramics are ascribed to the double ionized oxygen vacancies. The open-circuit voltage (Voc) of ∼15.7 V and short-circuit current (Jsc) of ∼1450 nA/cm2 are obtained in the 0.95BNT-0.05BNN ceramic under 1 sun illumination (AM1.5G, 100 mW/cm2). A larger Voc of 23 V and a higher Jsc of 5500 nA/cm2 are achieved at the poling field of 60 kV/cm under the same light conditions. The study shows this system has great application prospects in the photovoltaic field.

Quantitative Study of Al/W Interaction In Si/SiO2/W-Ti/Al Thin Film System

1988 ◽  
Vol 119 ◽  
Author(s):  
Hung-Yu Liu ◽  
Peng-Heng Chang ◽  
Jim Bohlman ◽  
Hun-Lian Tsai
Keyword(s):  
Thin Film ◽  
Film System ◽  
X Ray Diffraction ◽  
Compound Formation ◽  
X Ray ◽  
Thin Film System ◽  
Glancing Angle ◽  
Integrated Intensity ◽  
Al Thin Film ◽  
Kinetics Of

AbstractThe interaction of Al and W in the Si/SiO2/W-Ti/Al thin film system is studied quantitatively by glancing angle x-ray diffraction. The formation of Al-W compounds due to annealing is monitored by the variation of the integrated intensity from a few x-ray diffraction peaks of the corresponding compounds. The annealing was conducted at 400°C, 450°C and 500°C from 1 hour to 300 hours. The kinetics of compound formation is determined using x-ray diffraction data and verified by TEM observations. We will also show the correlation of the compound formation to the change of the electrical properties of these films.

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