Molecular Beam Epitaxial Growth of Nonpolar a-plane InN/ GaN Heterostructures

2012 ◽  
Vol 1396 ◽  
Author(s):  
Mohana K. Rajpalke ◽  
Thirumaleshwara N. Bhat ◽  
Basanta Roul ◽  
Mahesh Kumar ◽  
S. B. Krupanidhi
Keyword(s):  
Schottky Barrier ◽  
Molecular Beam ◽  
Schottky Barrier Height ◽  
High Energy ◽  
Scanning Electron Micrographs ◽  
X Ray Diffraction ◽  
X Ray ◽  
Molecular Beam Epitaxial ◽  
Diffraction Patterns ◽  
Molecular Beam Epitaxial Growth

ABSTRACTNonpolar a-plane InN/GaN heterostructures were grown by plasma assisted molecular beam epitaxy. The growth of nonpolar a- plane InN / GaN heterostructures were confirmed by high resolution x-ray diffraction study. Reflection high energy electron diffraction patterns show the reasonably smooth surface of a-plane GaN and island-like growth for nonpolar a-plane InN film, which is further confirmed by scanning electron micrographs. An absorption edge in the optical spectra has the energy of 0.74 eV, showing blueshifts from the fundamental band gap of 0.7 eV. The rectifying behavior of the I-V curve indicates the existence of Schottky barrier at the InN and GaN interface. The Schottky barrier height (φb) and the ideality factor (η) for the InN/GaN heterostructures found to be 0.58 eV and 2.05 respectively.

Molecular Beam Epitaxy Study of InAs/GaSb Heteroepitaxy on The (111)A and (111)B Orientations

1992 ◽  
Vol 263 ◽  
Author(s):  
J. A. Dura ◽  
J. T. Zborowski ◽  
T. D. Golding
Keyword(s):  
Molecular Beam ◽  
High Energy ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Group V ◽  
X Ray ◽  
Molecular Beam Epitaxial ◽  
Wide Range ◽  
Molecular Beam Epitaxial Growth ◽  
Secondary Ion

ABSTRACTWe have investigated the molecular beam epitaxial growth of homoepitaxial InAs and GaSb and InAs/GaSb heterostructures on both the (111)A and (111)B orientations. Our studies have found that high quality GaSb epilayers can be grown on both the (111)A and (111l)B orientations over a wide range of growth temperatures and flux ratios. Reflection high energy electron diffr-action phase diagrams for GaSb [111[ are presented. InAs/GaSb heterostructures, simultaneously grown on (11l)A and (111)B orientations, have been investigated by secondary ion mass spectroscopy depth profiles and double crystal x-ray diffraction. Unintentional incorporation of the ‘second’ group-V element is found to be approximately three times greater in the (111)A orientation than in the (111)B for both species.

scholarly journals Real-time observation of rotational twin formation during molecular-beam epitaxial growth of GaAs on Si (111) by x-ray diffraction

AIP Advances ◽  
2016 ◽  
Vol 6 (3) ◽  
pp. 035303 ◽  
Author(s):  
Hidetoshi Suzuki ◽  
Yuka Nakata ◽  
Masamitu Takahasi ◽  
Kazuma Ikeda ◽  
Yoshio Ohshita ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Real Time ◽  
Molecular Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Molecular Beam Epitaxial ◽  
Twin Formation ◽  
Time Observation ◽  
Molecular Beam Epitaxial Growth ◽  
Real Time Observation

Direct observation of strain in InAs quantum dots and cap layer during molecular beam epitaxial growth using in situ X-ray diffraction

2015 ◽  
Vol 118 (18) ◽  
pp. 185303 ◽  
Author(s):  
Kenichi Shimomura ◽  
Hidetoshi Suzuki ◽  
Takuo Sasaki ◽  
Masamitu Takahasi ◽  
Yoshio Ohshita ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Epitaxial Growth ◽  
Direct Observation ◽  
Molecular Beam ◽  
X Ray Diffraction ◽  
Inas Quantum Dots ◽  
X Ray ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Molecular Beam Epitaxial Growth and Dielectric Characterization of Ba0.6Sr0.4TiO3 Films

2006 ◽  
Vol 966 ◽  
Author(s):  
P. Fisher ◽  
M. Skowronski ◽  
P. A. Salvador ◽  
M. Snyder ◽  
J. Xu ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Rutherford Backscattering Spectrometry ◽  
High Energy ◽  
Ex Situ ◽  
Cavity Resonance ◽  
X Ray Diffraction ◽  
Dielectric Characterization ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

ABSTRACTBa0.6Sr0.4TiO3 films were grown by molecular beam epitaxy on MgO(001) and LaAlO3(001) substrates. The growth mode was determined to be two-dimensional by in-situ reflection high-energy electron diffraction. The films were structurally and dielectrically characterized ex-situ using X-ray diffraction, Rutherford backscattering spectrometry, and split cavity resonance mode dielectrometry. The structural and dielectric properties of the Ba0.6Sr0.4TiO3 film grown on MgO were determined to be inferior to the film grown on LaAlO3, as was indicated by the broader rocking curve (0.59 deg. vs. 0.17 deg.) and higher dielectric loss (0.29 vs. 0.12).

A Study on the Growth of Cubic GaN Films Using an AlGaAs Buffer Layer Grown on GaAs (100) by Plasma-Assisted Molecular Beam Epitaxy

2000 ◽  
Vol 639 ◽  
Author(s):  
Ryuhei Kimura ◽  
Kiyoshi Takahashi ◽  
H. T. Grahn
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Energy ◽  
Rf Plasma ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cubic Gan

ABSTRACTAn investigation of the growth mechanism for RF-plasma assisted molecular beam epitaxy of cubic GaN films using a nitrided AlGaAs buffer layer was carried out by in-situ reflection high energy electron diffraction (RHEED) and high resolution X-ray diffraction (HRXRD). It was found that hexagonal GaN nuclei grow on (1, 1, 1) facets during nitridation of the AlGaAs buffer layer, but a highly pure, cubic-phase GaN epilayer was grown on the nitrided AlGaAs buffer layer.

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