W/Si Schottky Diodes: Effect of Metal Deposition Conditions on the Barrier Height

1994 ◽  
Vol 356 ◽  
Author(s):  
M. Mamor ◽  
E. Finkman ◽  
F. Meyer ◽  
K. Bouziane
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
X Ray Diffraction ◽  
Experimental Conditions ◽  
X Ray ◽  
Barrier Heights ◽  
P Type ◽  
Deposition Conditions

AbstractThe Schottky barrier heights (ΦB) for W/Si Schottky diodes have been determined from I–V measurements. The effects of the sputter deposition conditions of the W-films were studied. X-ray diffraction was used to examine the structure and the lattice parameters of the W-films while the stress was determined by using a profilometer from the measurement of the curvature of the substrate after metallization. The resistivity is determined by using a four-point probe. A compressive-to-tensile stress transition is associated with the transformation of the ±—W-phase into the (β—W-phase as the working gas pressure is increased. These effects, which are frequently observed, coïncide with a significant increase of the W-film resistivity and a change (△ΦB≈50 meV) in the Schottky barrier height on n-type. On the other hand, the barrier height on the p-type remains constant under all the experimental conditions investigated. These results are discussed in terms of effects of strain and structure of W-films on the work function of the W, as well as in terms of modification of the pinning position of the Fermi level or else change in the value of the Richardson constant.

Barrier Height Control and X-Ray Diffraction Study of Metal on Si1−Gex/Si Grown by Very Low Pressure CVD

1995 ◽  
Vol 402 ◽  
Author(s):  
Z. Q. Shiâ ◽  
L. He ◽  
Y. Zheng
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Diodes ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Control Technique ◽  
X Ray Diffraction ◽  
X Ray ◽  
Height Control ◽  
Barrier Formation

AbstractThe potential application of epitaxial Si1−xGex, on Si in electronic and optoelectronic devices has led to an increased study of metal - Si1−xGex interaction and barrier height control technique. In this paper, we report the epitaxial growth of Si1−xGex on Si and the Schottky barrier formation processing. The Si1−xGex (x=0.17 and 0.20) layers were grown by rapid radiant heating, very low pressure chemical vapor deposition (VLPCVD). The crystal structure and epitaxial nature of the Si1−xGex, layers were studied by X-Ray diffraction. The value of full width at half maximum (FWHM) was found to be 0.34° for the as grown Si1−xGex (400) peak. The metal-Si1−xGex/Si Schottky diodes were formed by depositing Pd on Si1−xGex/Si at room temperature (RT=300K) and low temperature (LT=77K). The Schottky barrier heights and current transport mechanisms were determined by current-voltage-temperature (I-V-T) measurements. The interface property of Pd/ Si1−xGex/Si were studied as a function of metal deposition and post annealing temperatures.

Effect of Si and Ge Interface Layers on the Schottky Barrier Height of Metal Contacts to GaAs

1989 ◽  
Vol 148 ◽  
Author(s):  
J.R. Waldrop ◽  
R.W. Grant
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Photoemission Spectroscopy ◽  
Metal Contacts ◽  
New Approach ◽  
X Ray ◽  
Electrical Methods ◽  
Interface Layers ◽  
P Type

ABSTRACTA new approach for extending the range of the Schottky barrier height ϕB of metal contacts to (100) GaAs is described. Very thin (∼ 10-30Å) heavily n-type and p-type Si or Ge interlayers are found to directly alter the GaAi interface Fermi energy EF. X-ray photoemission spectroscopy is used to determine EF during contact formation and the corresponding ϕB for thick contacts is measured by electrical methods. In an appropriate structure the ϕB range for contacts to n-type GaAs is ∼ 0.25 to 1.0 eV. For p-type GaAs ϕB has been increased to as much as 0.9 eV. This method of ϕBcontrol can be used for both Schottky barrier contact and nonalloyed ohmic contact applications. The results are interpreted in terms of a simple heterojunction model.

scholarly journals Schottky diodes based on 4H-SiC epitaxial layers

2021 ◽  
Vol 2103 (1) ◽  
pp. 012235
Author(s):  
A M Strel’chuk ◽  
E V Kalinina
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Alternative Explanation ◽  
Schottky Diodes ◽  
Reverse Current ◽  
Epitaxial Layers ◽  
Barrier Heights ◽  
Current Voltage ◽  
Significant Spread

Abstract Forward and reverse current-voltage (IV) characteristics of Cr-SiC (4H) Schottky diodes based on epitaxial layers with doping (1-3)· 1015 cm-3 were studied in the temperature range of 300-550 K. It is shown that in many cases the IV characteristics are close to ideal, but a significant spread of the forward IV characteristics of diodes manufactured in the same way on the same epitaxial layer was found, probably due to the spread of the Schottky barrier heights reaching 0.3 eV. Heating of the diode, as well as packaging, can also change the Schottky barrier height. An alternative explanation suggests the presence of a powerful shunt.

scholarly journals Electric dipole effect in PdCoO2/β-Ga2O3 Schottky diodes for high-temperature operation

2019 ◽  
Vol 5 (10) ◽  
pp. eaax5733 ◽  
Author(s):  
T. Harada ◽  
S. Ito ◽  
A. Tsukazaki
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Extreme Environments ◽  
Oxide Interface ◽  
Electric Dipoles ◽  
Bandgap Semiconductors ◽  
High Temperature Operation

High-temperature operation of semiconductor devices is widely demanded for switching/sensing purposes in automobiles, plants, and aerospace applications. As alternatives to conventional Si-based Schottky diodes usable only at 200°C or less, Schottky interfaces based on wide-bandgap semiconductors have been extensively studied to realize a large Schottky barrier height that makes high-temperature operation possible. Here, we report a unique crystalline Schottky interface composed of a wide-gap semiconductor β-Ga2O3 and a layered metal PdCoO2. At the thermally stable all-oxide interface, the polar layered structure of PdCoO2 generates electric dipoles, realizing a large Schottky barrier height of ~1.8 eV, well beyond the 0.7 eV expected from the basal Schottky-Mott relation. Because of the naturally formed homogeneous electric dipoles, this junction achieved current rectification with a large on/off ratio approaching 108 even at a high temperature of 350°C. The exceptional performance of the PdCoO2/β-Ga2O3 Schottky diodes makes power/sensing devices possible for extreme environments.

Tin as a Diffusion Barrier Between CoSi2 or PtSi and Aluminum

1982 ◽  
Vol 18 ◽  
Author(s):  
R. J. Schutz
Keyword(s):  
Chemical Composition ◽  
Electrical Properties ◽  
Schottky Barrier ◽  
Diffusion Barrier ◽  
Schottky Barrier Height ◽  
X Ray Diffraction ◽  
X Ray ◽  
Effective Barrier ◽  
Glancing Angle ◽  
Typical Temperature

The effectiveness of a thin (360Å) layer of reactively sputtered TiN as a diffusion barrier between aluminum and two silicides (PtSi and CoSi2) was evaluated. The chemical composition, structural phases and electrical properties of silicide/Al and silicide/TiN/Al contacts to n-type silicon were studied by Rutherford backscattering spectroscopy, glancing angle X-ray diffraction and Schottky barrier height measurements respectively. The results show that TiN is an effective barrier in these two systems up to at least 450°C, the typical temperature at which aluminum contacts are sintered.

Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation

2014 ◽  
Vol 778-780 ◽  
pp. 828-831 ◽  
Author(s):  
Junichi Hasegawa ◽  
Kazuya Konishi ◽  
Yu Nakamura ◽  
Kenichi Ohtsuka ◽  
Shuhei Nakata ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Leakage Current ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Stacking Faults ◽  
Metal Electrode ◽  
Reverse Leakage Current ◽  
Electrode Interface ◽  
The Relationship

We clarified the relationship between the enhanced leakage current of SiC Junction Barrier Schottky diodes and the stacking faults in the SiC crystal at the SiC and metal electrode interface by measuring the electrical and optical properties, and confirm by using the numerical simulations. Numerical simulation considering local lowering of Schottky barrier height, which is 0.8 eV lower than that of 4H-SiC well explained the 2-4 orders of magnitude higher reverse leakage current caused by the SFs. We concluded that the locally lowering of the Schottky barrier height at the 3C-SiC layer in the 4H-SiC surface is a main cause of the large reverse leakage current.

Schottky Barrier Height andS-Parameter of Ti, Cu, Pd, and Pt Contacts on p-Type GaN

2012 ◽  
Vol 51 (9S2) ◽  
pp. 09MK01 ◽  
Author(s):  
Youngjun Park ◽  
Kwang-Soon Ahn ◽  
Hyunsoo Kim
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
P Type
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