Laser Chemical Vapor Deposition Of Tin Films

1989 ◽  
Vol 168 ◽  
Author(s):  
B. Chen ◽  
N. Biunno ◽  
R. K. Singh ◽  
J. Narayan
Keyword(s):  
Continuous Wave ◽  
Rutherford Backscattering Spectrometry ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Lattice Parameter ◽  
304 Stainless Steel ◽  
Tin Films ◽  
Tin Thin Films ◽  
Diffraction Patterns ◽  
Steel Substrates

AbstractWe have investigated the pyrolytic deposition of TiN thin films on molybdenum and 304 stainless steel substrates by continuous wave (CW) and pulsed CO2 (λ=10.6 μm) laser radiation. A flow rate of NH3: TiCl4 of 5:1 was maintained during the deposition process. The substrate temperature was controlled by varying the intensity of the incident laser irradiation. The TiN films were characterized by Transmission Electron Microscopy (TEM), Auger Electron Spectroscopy (AES) and Rutherford Backscattering Spectrometry (RBS). TEM results showed that the films were polycrystalline of equiaxed nature with diffraction patterns containing the characteristic TiN rings. The films had a lattice parameter of 4.24Å. AES results showed a slight incorporation of oxygen.

MOCVD-TiN Barrier Layers for ULSI Applications

1992 ◽  
Vol 260 ◽  
Author(s):  
Ivo J. Raaijmakers ◽  
Raymond N. Vrtis ◽  
Jack Yang ◽  
Seshadri Ramaswami ◽  
Andre Lagendijk ◽  
...  
Keyword(s):  
Diffusion Barrier ◽  
Integrated Circuit ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Al Alloy ◽  
Tin Films ◽  
Integrated Circuit Manufacturing ◽  
Barrier Performance ◽  
Tin Thin Films

ABSTRACTMaterial properties are reported of high quality TiN thin films, deposited by a low temperature (400 – 450 C) and low pressure (10 Torr) metalorganic chemical vapor deposition process using tetrakis(diethylamino)Ti and ammonia. Layer resistivities of less than 200 μΩ cm are achieved in 300 to 500 A thick films. The carbon and oxygen content in the films is found to be low (<3% C, <0.5% O). Conformality of the films in small contact holes is sufficient for the films to be applicable as diffusion barrier and adhesion layers in integrated circuit manufacturing at the 0.25 μΩgeneration.Integration of the MOCVD-TiN films in a Ti/TiN/Al-alloy metallization scheme is also reported. The diffusion barrier performance of the MOCVD-TiN layers is found to exceed that of PVD-TiN layers.

scholarly journals Highly Plasmonic Titanium Nitride by Room-Temperature Sputtering

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Chun-Chieh Chang ◽  
John Nogan ◽  
Zu-Po Yang ◽  
Wilton J. M. Kort-Kamp ◽  
Willard Ross ◽  
...  
Keyword(s):  
Titanium Nitride ◽  
Room Temperature ◽  
Atomic Layer ◽  
Deposition Process ◽  
Attractive Alternative ◽  
Tin Films ◽  
Periodic Arrays ◽  
Alternative Material ◽  
Tin Thin Films ◽  
Temperature Deposition

Abstract Titanium nitride (TiN) has recently emerged as an attractive alternative material for plasmonics. However, the typical high-temperature deposition of plasmonic TiN using either sputtering or atomic layer deposition has greatly limited its potential applications and prevented its integration into existing CMOS device architectures. Here, we demonstrate highly plasmonic TiN thin films and nanostructures by a room-temperature, low-power, and bias-free reactive sputtering process. We investigate the optical properties of the TiN films and their dependence on the sputtering conditions and substrate materials. We find that our TiN possesses one of the largest negative values of the real part of the dielectric function as compared to all other plasmonic TiN films reported to date. Two-dimensional periodic arrays of TiN nanodisks are then fabricated, from which we validate that strong plasmonic resonances are supported. Our room-temperature deposition process can allow for fabricating complex plasmonic TiN nanostructures and be integrated into the fabrication of existing CMOS-based photonic devices to enhance their performance and functionalities.

The Texture Effect on Diffusion Barrier Property on TiN Films between Copper and Si Wafer

2005 ◽  
Vol 495-497 ◽  
pp. 1371-1376
Author(s):  
Dong Young Sung ◽  
In Soo Kim ◽  
Min Gu Lee ◽  
No Jin Park ◽  
Bee Lyong Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Diffusion Barrier ◽  
Chemical Vapor ◽  
Columnar Structure ◽  
Organic Chemical ◽  
Dense Structure ◽  
Tin Films ◽  
Tin Thin Films ◽  
Metal Organic ◽  
Better Than

TiN thin films are widely used as a coating material due to their good mechanical and conductivity properties, high thermal properties, strong erosion and corrosion resistance. Also TiN has been used in Si devices as a diffusion barrier material for Al and Cu-based metallization. The uniform and dense structure of thin films is influenced by the texture of films. It was good to have uniform and dense structure and bad to have an open columnar structure in TiN thin films. Therefore, the property of diffusion barrier of the TiN films in semiconductor also is related to the texture and microstructure of TiN coated layer. In this study, the relationship between the texture and microstructure and the best diffusion barrier propertiy of TiN coated films (by PVD and MOCVD) on semiconductor devices (Cu/TiN/SiO2/Si layer) were investigated under different processing conditions and textures. The property of diffusion barrier for Cu of physical vapor deposited TiN thin films is better than that of metal organic chemical vapor deposited TiN thin films. Also the property of diffusion barrier for Cu of (111) textured TiN thin films is better than that of (200) textured TiN thin films.

Grain-Size and Impurity Effects in Low-Temperature Deposition of TiN

1996 ◽  
Vol 438 ◽  
Author(s):  
H. Kakimy ◽  
F. Namavar ◽  
E. Tobin ◽  
J. Haupt ◽  
R. Bricault ◽  
...  
Keyword(s):  
Grain Size ◽  
Ion Beam ◽  
Physical And Mechanical Properties ◽  
High Hardness ◽  
Deposition Process ◽  
Impurity Effects ◽  
Tin Films ◽  
Tin Coatings ◽  
Tin Thin Films ◽  
Temperature Deposition

AbstractCommercially deposited titanium nitride (TIN) thin films have been available daring recent years. These TiN films possess high hardness and have good wear resistance; however, the deposition process typically requires a temperature of 500°C or higher. In many cases, due to substrate characteristics, a deposition temperature below 150°C is required in order to exploit TiN coating properties.The objective of this work is to demonstrate that ion beam assisted deposition (IBAD) makes it possible to deposit gold-color TiN films with good adhesion onto a variety of substrates including plastics at temperatures below 150°C. These films have physical and mechanical properties as good as those produced at high temperatures. Samples have also been examined by nanohardness techniques to accurately determine the hardness of the films and relate them to process parameters and crystal sizes. Our results indicate that, by controlling the grain size of TiN, it is possible to fabricate TiN coatings at room temperature with hardness as high as 25.5 ± 1 GPa.

Electron Beam Assisted Chemical Vapor Deposition of Gold in an Environmental Tem

1995 ◽  
Vol 388 ◽  
Author(s):  
John Kouvetakis ◽  
Renu SharmA ◽  
B. L. Ramakrisna ◽  
Jeff Drucker ◽  
Paul Seidler
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Deposition Process ◽  
In Situ Observation ◽  
Beam Irradiation ◽  
Environmental Tem ◽  
Diffraction Patterns

AbstractWe demonstrate a novel technique for in situ observation of the chemical vapor deposition of high purity gold using ethyl(trimethylphosphine)gold(I). an environmental transmission electron microscope with 3.8 eV resolution was used to observe and compare the growth of the material with or without electron beam irradiation (120 keV) with Si (100) substrate temperatures ranging from 125-200 °C. Typical precursor pressures of 10-4 Torr and E-beam irradiation resulted in rapid growth of virtually continuous gold films. thermal deposition without the beam resulted in low nucleation densities, low deposition rates, and island-like growth. Images and diffraction patterns acquired during the deposition process indicated polycrystalline gold and elemental analysis at the nanometer scale showed that the films had excellent chemical purity. atomic force microscopy was also used to investigate the three dimensional morphology of the materials. the most notable result of the deposition process is the dramatic enhancement of the growth rate due to the beam irradiation.

The Texture and Property of Diffusion Barrier of TiN Thin Films

2005 ◽  
Vol 475-479 ◽  
pp. 1865-1868 ◽  
Author(s):  
Dong Young Sung ◽  
In Soo Kim ◽  
Min Gu Lee ◽  
Bee Lyong Yang ◽  
Jun Mo Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Diffusion Barrier ◽  
Chemical Vapor ◽  
Columnar Structure ◽  
Organic Chemical ◽  
Dense Structure ◽  
Tin Films ◽  
Tin Thin Films ◽  
Metal Organic ◽  
Better Than

The uniform and dense structure of thin films is influenced by the texture of films. It was good to have uniform and dense structure and bad to have an open columnar structure in TiN thin films. Therefore, the property of diffusion barrier of the TiN films in semiconductor also is related to the texture and microstructure of TiN coated layers. In this study, the relationships between the textures and microstructures and the properties of TiN films on semiconductor were investigated under different processing methods (PVD and MOCVD). The property of diffusion barrier of RF sputtered (PVD) TiN is better than that of metal organic chemical vapor deposited (MOCVD) TiN thin films. Also the property of diffusion barrier of PVD (111) textured TiN is better than that of PVD (100) textured TiN thin films on oxidized Si wafer.

Diamond-Like Carbon Formed by Plasma Immersion Ion Implantation and Deposition Technique on 304 Stainless Steel

2005 ◽  
Vol 107 ◽  
pp. 129-132 ◽  
Author(s):  
C. Pakpum ◽  
N. Pasaja ◽  
P. Suanpoot ◽  
D. Boonyawan ◽  
P. Srisantithum ◽  
...  
Keyword(s):  
Stainless Steel ◽  
Ion Implantation ◽  
Rutherford Backscattering Spectrometry ◽  
Chemical Species ◽  
Optical Emission ◽  
Deposition Process ◽  
304 Stainless Steel ◽  
Diamond Like Carbon ◽  
Structure Information ◽  
Plasma Immersion Ion Implantation

Diamond-like carbon (DLC) films were deposited on stainless steel disc substrates by plasma immersion ion implantation and deposition (PIII&D) technique. Ar, CH4 and C2H2 gas were used as the working gases and discharged by radio frequency at 13.56 MHz. During the implantation and deposition process the plasma discharge was monitored by optical emission spectroscopy in order to analyze the state of the chemical species presented in the plasma. Ion implantation (Vbias = -20 kV and –10 kV) process served to produce a graded interface between the DLC films and the substrate material. Deposition (Vbias = -5 kV) process using a gas mixture of C2H2/Ar with a ratio of 1:1. The structure information of the DLC films was evaluated by Raman spectroscopy and Fourier transform infrared spectroscopy (FTIR). The composition of the DLC films and the thickness was measured by Rutherford backscattering spectrometry (RBS). The tribological properties were analyzed using a pin-on-disk tribometer and a microhardness tester, respectively. It was found that the DLC film was 0.8 μm thick with a hardness of 2.54 GPa and had good friction properties. Raman spectra appeared as G-band and D-band centered at 1550 cm-1 and 1418 cm-1, respectively. FTIR analysis observed the sp3 C=H2 asymmetric and sp2 C=C bond at 2928.73 cm-1 and 1667.10 cm-1 peak.

Metalorganic chemical vapor deposition of titanium oxide for microelectronics applications

2001 ◽  
Vol 16 (6) ◽  
pp. 1838-1849 ◽  
Author(s):  
Kanchana Vydianathan ◽  
Guillermo Nuesca ◽  
Gregory Peterson ◽  
Eric T. Eisenbraun ◽  
Alain E. Kaloyeros ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Oxide Semiconductor ◽  
X Ray ◽  
Control Film

A chemical vapor deposition process has been developed for titanium dioxide (TiOx) for applications as capacitor dielectric in sub-quarter-micron dynamic random-access memory devices, and as gate insulators in emerging generations of etal-oxide-semiconductor transistors. Studies using the β-diketonate source precursor (2,2,6,6-tetramethyl-3,5-heptanedionato) titanium were carried out to examine the underlying mechanisms that control film nucleation and growth kinetics and to establish the effects of key process parameters on film purity, composition, texture, morphology, and electrical properties. Resulting film properties were thoroughly analyzed by x-ray diffraction, x-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, scanning electron microscopy (SEM), focused-ion-beam SEM, and capacitance–voltage (C–V) measurements. The study resulted in the identification of an optimized process for the deposition of an anatase–rutile TiOx film with a dielectric constant approximately 85 at 1 MHz for a 330-nm thickness, and a leakage current below 2 × 10−8 A/cm2 for bias voltage values up to 3.5 V.

Superconducting yba2cu3o7‐x Thin Film on Metal Substrate by Chemical Vapor Deposition Process.

1989 ◽  
Vol 169 ◽  
Author(s):  
T. Yamaguchi ◽  
S. Aoki ◽  
N. Sadakata ◽  
O. Kohno
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Metal Substrate ◽  
Superconducting Transition ◽  
Single Crystalline ◽  
Crystalline Oxide ◽  
Order Of Magnitude ◽  
Diffraction Patterns

AbstractSuperconducting YBa2Cu307_x thin films were prepared by chemical vapor deposition using beta‐diketonate chelates on various oxide substrates and metal substrates. According to X‐ray diffraction patterns, the existence of a well‐oriented orthorhombic YBagCUgO^x structure has been confirmed in all specimens. The temperature of complete superconducting transition were observed at 89K on single‐crystalline oxide substrate, and 84K on metal substrate. Reduced critical current density of the film on single‐crystalline substrate in magnetic fields up to 600mT at 77K remained one or two order of magnitude higher than that of the film on metal substrate.

Reaction couples of ceramic thin films prepared by CVD

1988 ◽  
Vol 46 ◽  
pp. 798-799
Author(s):  
D.W. Susnitzky ◽  
S.R. Summerfelt ◽  
C.B. Carter
Keyword(s):  
Thin Film ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Solid State Reactions ◽  
Spatial Distributions ◽  
Diffusion Couples ◽  
Kinetics Studies ◽  
Ceramic Thin Films ◽  
Initial Stage

Solid-state reactions have traditionally been studied in the form of diffusion couples. This ‘bulk’ approach has been modified, for the specific case of the reaction between NiO and Al2O3, by growing NiAl2O4 (spinel) from electron-transparent Al2O3 TEM foils which had been exposed to NiO vapor at 1415°C. This latter ‘thin-film’ approach has been used to characterize the initial stage of spinel formation and to produce clean phase boundaries since further TEM preparation is not required after the reaction is completed. The present study demonstrates that chemical-vapor deposition (CVD) can be used to deposit NiO particles, with controlled size and spatial distributions, onto Al2O3 TEM specimens. Chemical reactions do not occur during the deposition process, since CVD is a relatively low-temperature technique, and thus the NiO-Al2O3 interface can be characterized. Moreover, a series of annealing treatments can be performed on the same sample which allows both Ni0-NiAl2O4 and NiAl2O4-Al2O3 interfaces to be characterized and which therefore makes this technique amenable to kinetics studies of thin-film reactions.

Sign in / Sign up

Export Citation Format

Share Document