Grain-Size and Impurity Effects in Low-Temperature Deposition of TiN

1996 ◽  
Vol 438 ◽  
Author(s):  
H. Kakimy ◽  
F. Namavar ◽  
E. Tobin ◽  
J. Haupt ◽  
R. Bricault ◽  
...  

AbstractCommercially deposited titanium nitride (TIN) thin films have been available daring recent years. These TiN films possess high hardness and have good wear resistance; however, the deposition process typically requires a temperature of 500°C or higher. In many cases, due to substrate characteristics, a deposition temperature below 150°C is required in order to exploit TiN coating properties.The objective of this work is to demonstrate that ion beam assisted deposition (IBAD) makes it possible to deposit gold-color TiN films with good adhesion onto a variety of substrates including plastics at temperatures below 150°C. These films have physical and mechanical properties as good as those produced at high temperatures. Samples have also been examined by nanohardness techniques to accurately determine the hardness of the films and relate them to process parameters and crystal sizes. Our results indicate that, by controlling the grain size of TiN, it is possible to fabricate TiN coatings at room temperature with hardness as high as 25.5 ± 1 GPa.

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Chun-Chieh Chang ◽  
John Nogan ◽  
Zu-Po Yang ◽  
Wilton J. M. Kort-Kamp ◽  
Willard Ross ◽  
...  

Abstract Titanium nitride (TiN) has recently emerged as an attractive alternative material for plasmonics. However, the typical high-temperature deposition of plasmonic TiN using either sputtering or atomic layer deposition has greatly limited its potential applications and prevented its integration into existing CMOS device architectures. Here, we demonstrate highly plasmonic TiN thin films and nanostructures by a room-temperature, low-power, and bias-free reactive sputtering process. We investigate the optical properties of the TiN films and their dependence on the sputtering conditions and substrate materials. We find that our TiN possesses one of the largest negative values of the real part of the dielectric function as compared to all other plasmonic TiN films reported to date. Two-dimensional periodic arrays of TiN nanodisks are then fabricated, from which we validate that strong plasmonic resonances are supported. Our room-temperature deposition process can allow for fabricating complex plasmonic TiN nanostructures and be integrated into the fabrication of existing CMOS-based photonic devices to enhance their performance and functionalities.


2012 ◽  
Vol 157-158 ◽  
pp. 1320-1323
Author(s):  
Branko Škorić ◽  
D. Kakaš ◽  
G. Favato ◽  
A. Miletić ◽  
M. Arsenovic

In this paper, we present the results of a study of TiN thin films which are deposited by a Physical Vapour Deposition (PVD) and Ion Beam Assisted Deposition (IBAD). In the present investigation the subsequent ion implantation was provided with N2+ ions. The ion implantation was applied to enhance the mechanical properties of surface. The thin film deposition process exerts a number of effects such as crystallographic orientation, morphology, topography, densification of the films.. A variety of analytic techniques were used for characterization, such as scratch test, calo test, Scanning electron microscopy (SEM), Atomic Force Microscope (AFM), X-ray diffraction (XRD) and Energy Dispersive X-ray analysis (EDAX).


2001 ◽  
Vol 173 (3-4) ◽  
pp. 290-295 ◽  
Author(s):  
J.M. López ◽  
F.J. Gordillo-Vázquez ◽  
O. Böhme ◽  
J.M. Albella

2011 ◽  
Vol 189-193 ◽  
pp. 925-930 ◽  
Author(s):  
Xiu Qin Bai ◽  
Jian Li

The low temperature deposition principle of magnetron sputtering was discussed. Reactive magnetron sputtering technique was used to gain titanium nitride (TiN) thin films on W18Cr4V high-speed steel substrates at low temperature. A series of experiments had been conducted to study the properties of TiN films. The experimental results showed that at the low temperature(<140 °C), magnetic sputtering can be used for the deposition of TiN film with compact, uniform and high nano-hardness, and their tribological properties were excellent, which co-determined by the film structure of low temperature magnetron sputtering and the counter-parts of rubbing pairs.


2009 ◽  
Vol 1210 ◽  
Author(s):  
Hendrik Zachmann ◽  
Stefan Puttnins ◽  
Felix Daume ◽  
Andreas Rahm ◽  
Karsten Otte ◽  
...  

AbstractDifferent methods for Na incorporation are known for the use of Na-free substrates like stainless steel or polyimide foil. In this work Cu(In,Ga)Se2 (CIGS) absorber layers with different amounts of Na are investigated. The CIGS samples were prepared via a roll-to-roll deposition process with ion beam assistance (Solarion) and by a multi-stage low temperature co-evaporation process (HZB). Na was either incorporated via in-situ co-evaporation of NaF (for roll-to-roll deposition) or by a Na-containing precursor (for multi-stage deposition). With increasing amounts of Na an increase of VOC is observed for both deposition tech-niques. In contrast, within the deposition parameters used, jSC decreases with increasing Na amount for co-evaporation of NaF while it seems unaffected when using a NaF precursor layer. The elemental depth profiles of the different CIGS thin films were studied via secondary ion mass spectroscopy and were found to depend strongly on the deposition technique. It seems that beneficial effects of the addition of Na are independent of the method of in-corporation, even if the distribution of Na in the CIGS layer is different due to different methods of incorporation and CIGS deposition processes.


1999 ◽  
Vol 585 ◽  
Author(s):  
J. Dzick ◽  
S. Sievers ◽  
J. Hoffmann ◽  
K. Thiele ◽  
F. Garcia-Moreno ◽  
...  

AbstractBiaxially textured yttria stabilized zirconia (YSZ) buffer layers were deposited on long polycrystalline metallic tapes by an ion-beam-assisted deposition process (IBAD) to serve as templates for high-current carrying Y1Ba2Cu3O7-x (YBCO) films. YSZ was deposited by a dualionbeam equipment with two 11 cm Kaufman ion sources. The coating of large-area technical substrates, large in comparison with the ion sources, requires substrate movements to render YSZ films of homogeneous texture quality. These movements can hinder cooling of the metallic tapes in the absence of a thermal contact. Therefore, the temperature of those small-heat-capacity substrates could rise to above 100 °C within minutes, causing a decrease of the in-plane alignment of YSZ. The investigation of the temperature dependence of the IBAD process reveals that the best results of the in-plane alignment could be obtained by room temperature deposition. Applying high tape velocities hinder a rise of the deposition temperature to above 90 °C. Therefore, it is possible to deposit YSZ films on metal tapes (up to 60 mm × 1000 mm) with in-plane textures down to 15° full width at half maximum (FWHM), which allow their coating with highcurrent-carrying YBCO films.


Author(s):  
Branko Skoric ◽  
Damir Kakas ◽  
Aleksandar Miletic

In this paper, we present the results of a study of TiN films which are deposited by a Physical Vapor Deposition and Ion Beam Assisted Deposition. In the present investigation the subsequent ion implantation was provided with N2+ ions. The ion implantation was applied to enhance the mechanical properties of surface. In the nanoindentation technique, hardness and Young’s modulus can be determined by the Oliver and Pharr method. Indentation was performed with CSM Nanohardness Tester. The results are analyzed in terms of load-displacement curves, hardness, Young’s modulus, unloading stiffness and elastic recovery The analysis of the indents was performed by Atomic Force Microscope. The stress determination follows the conventional sin2 Ψ method, using a X-ray diffractometer. A variety of analytic techniques were used for characterization, such as scratch test, calo test, SEM, AFM, XRD and EDAX. Therefore, by properly selecting the processing parameters, well-adherent TiN films with high hardness can be obtained on engineering steel substrates, and show a potential for engineering applications. The experimental results indicated that the mechanical hardness is elevated by penetration of nitrogen, whereas the Young’s modulus is significantly elevated.


1996 ◽  
Vol 438 ◽  
Author(s):  
F. Namavar ◽  
J. Haupt ◽  
E. Tobin ◽  
H. Karimy ◽  
J. Trogolo ◽  
...  

AbstractTypical high-temperature thin-film deposition techniques are not suitable for certain substrates such as polymers and thermally-sensitive steels. In this work, ion beam assisted deposition (IBAD) was used to deposit ceramic and metallic films at temperatures below 150°C with nanocrystalline (< 100Å diameter) grain size. Nanoindentation studies of these films have shown hardnesses 50 to 100% greater than larger-grained films and, in some cases, fracture toughness approaching that of Si3N4.By combining chromium evaporation with nitrogen beam bombardment, hard, adherent CrN films without any porosity have been produced at low temperatures with a N/Cr arrival ratio of about 1. The grain size is typically smaller than 100Å and hardness is typically higher than 25 GPa. For a N/Cr arrival ratio slightly less than 1, we observed possible grain boundary porosity. However, even with porosity, hardness is typically 20 to 24 GPa for grain sizes smaller than 100Å. For a N/Cr arrival ratio of 1/4 we deposited elemental Cr with a grain size of 300 to 500Å and a hardness greater than that of silicon (12 GPa). Using Ar ions and a N backfill, we produced elemental Cr containing a mixture of coarse (120 to 150Å) and fine (25 to 30Å) grains. For high-temperature deposition of CrN, the grain size increases (200 to 600Å) with a noticeable decrease in hardness. Mechanical properties of CrN are greatly influenced by impurities, as well as by surface conditioning of the substrate.TiN films having gold color and grain sizes from 50 to 1000Å have been produced at low temperatures. Nanoindentation measurements of hardness and fracture toughness indicate that impurity-free TiN (with grains smaller than 100Å) has a hardness higher than 25 GPa and a fracture toughness close to that of Si3N4, but with higher wear resistance. Mechanical properties of our TiN films are greatly influenced by impurities, particularly oxygen, although it does not influence the gold color of TiN.


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