MOCVD-TiN Barrier Layers for ULSI Applications

1992 ◽  
Vol 260 ◽  
Author(s):  
Ivo J. Raaijmakers ◽  
Raymond N. Vrtis ◽  
Jack Yang ◽  
Seshadri Ramaswami ◽  
Andre Lagendijk ◽  
...  
Keyword(s):  
Diffusion Barrier ◽  
Integrated Circuit ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Al Alloy ◽  
Tin Films ◽  
Integrated Circuit Manufacturing ◽  
Barrier Performance ◽  
Tin Thin Films

ABSTRACTMaterial properties are reported of high quality TiN thin films, deposited by a low temperature (400 – 450 C) and low pressure (10 Torr) metalorganic chemical vapor deposition process using tetrakis(diethylamino)Ti and ammonia. Layer resistivities of less than 200 μΩ cm are achieved in 300 to 500 A thick films. The carbon and oxygen content in the films is found to be low (<3% C, <0.5% O). Conformality of the films in small contact holes is sufficient for the films to be applicable as diffusion barrier and adhesion layers in integrated circuit manufacturing at the 0.25 μΩgeneration.Integration of the MOCVD-TiN films in a Ti/TiN/Al-alloy metallization scheme is also reported. The diffusion barrier performance of the MOCVD-TiN layers is found to exceed that of PVD-TiN layers.

The Texture Effect on Diffusion Barrier Property on TiN Films between Copper and Si Wafer

2005 ◽  
Vol 495-497 ◽  
pp. 1371-1376
Author(s):  
Dong Young Sung ◽  
In Soo Kim ◽  
Min Gu Lee ◽  
No Jin Park ◽  
Bee Lyong Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Diffusion Barrier ◽  
Chemical Vapor ◽  
Columnar Structure ◽  
Organic Chemical ◽  
Dense Structure ◽  
Tin Films ◽  
Tin Thin Films ◽  
Metal Organic ◽  
Better Than

TiN thin films are widely used as a coating material due to their good mechanical and conductivity properties, high thermal properties, strong erosion and corrosion resistance. Also TiN has been used in Si devices as a diffusion barrier material for Al and Cu-based metallization. The uniform and dense structure of thin films is influenced by the texture of films. It was good to have uniform and dense structure and bad to have an open columnar structure in TiN thin films. Therefore, the property of diffusion barrier of the TiN films in semiconductor also is related to the texture and microstructure of TiN coated layer. In this study, the relationship between the texture and microstructure and the best diffusion barrier propertiy of TiN coated films (by PVD and MOCVD) on semiconductor devices (Cu/TiN/SiO2/Si layer) were investigated under different processing conditions and textures. The property of diffusion barrier for Cu of physical vapor deposited TiN thin films is better than that of metal organic chemical vapor deposited TiN thin films. Also the property of diffusion barrier for Cu of (111) textured TiN thin films is better than that of (200) textured TiN thin films.

The Texture and Property of Diffusion Barrier of TiN Thin Films

2005 ◽  
Vol 475-479 ◽  
pp. 1865-1868 ◽  
Author(s):  
Dong Young Sung ◽  
In Soo Kim ◽  
Min Gu Lee ◽  
Bee Lyong Yang ◽  
Jun Mo Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Diffusion Barrier ◽  
Chemical Vapor ◽  
Columnar Structure ◽  
Organic Chemical ◽  
Dense Structure ◽  
Tin Films ◽  
Tin Thin Films ◽  
Metal Organic ◽  
Better Than

The uniform and dense structure of thin films is influenced by the texture of films. It was good to have uniform and dense structure and bad to have an open columnar structure in TiN thin films. Therefore, the property of diffusion barrier of the TiN films in semiconductor also is related to the texture and microstructure of TiN coated layers. In this study, the relationships between the textures and microstructures and the properties of TiN films on semiconductor were investigated under different processing methods (PVD and MOCVD). The property of diffusion barrier of RF sputtered (PVD) TiN is better than that of metal organic chemical vapor deposited (MOCVD) TiN thin films. Also the property of diffusion barrier of PVD (111) textured TiN is better than that of PVD (100) textured TiN thin films on oxidized Si wafer.

Laser Chemical Vapor Deposition Of Tin Films

1989 ◽  
Vol 168 ◽  
Author(s):  
B. Chen ◽  
N. Biunno ◽  
R. K. Singh ◽  
J. Narayan
Keyword(s):  
Continuous Wave ◽  
Rutherford Backscattering Spectrometry ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Lattice Parameter ◽  
304 Stainless Steel ◽  
Tin Films ◽  
Tin Thin Films ◽  
Diffraction Patterns ◽  
Steel Substrates

AbstractWe have investigated the pyrolytic deposition of TiN thin films on molybdenum and 304 stainless steel substrates by continuous wave (CW) and pulsed CO2 (λ=10.6 μm) laser radiation. A flow rate of NH3: TiCl4 of 5:1 was maintained during the deposition process. The substrate temperature was controlled by varying the intensity of the incident laser irradiation. The TiN films were characterized by Transmission Electron Microscopy (TEM), Auger Electron Spectroscopy (AES) and Rutherford Backscattering Spectrometry (RBS). TEM results showed that the films were polycrystalline of equiaxed nature with diffraction patterns containing the characteristic TiN rings. The films had a lattice parameter of 4.24Å. AES results showed a slight incorporation of oxygen.

scholarly journals Highly Plasmonic Titanium Nitride by Room-Temperature Sputtering

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Chun-Chieh Chang ◽  
John Nogan ◽  
Zu-Po Yang ◽  
Wilton J. M. Kort-Kamp ◽  
Willard Ross ◽  
...  
Keyword(s):  
Titanium Nitride ◽  
Room Temperature ◽  
Atomic Layer ◽  
Deposition Process ◽  
Attractive Alternative ◽  
Tin Films ◽  
Periodic Arrays ◽  
Alternative Material ◽  
Tin Thin Films ◽  
Temperature Deposition

Abstract Titanium nitride (TiN) has recently emerged as an attractive alternative material for plasmonics. However, the typical high-temperature deposition of plasmonic TiN using either sputtering or atomic layer deposition has greatly limited its potential applications and prevented its integration into existing CMOS device architectures. Here, we demonstrate highly plasmonic TiN thin films and nanostructures by a room-temperature, low-power, and bias-free reactive sputtering process. We investigate the optical properties of the TiN films and their dependence on the sputtering conditions and substrate materials. We find that our TiN possesses one of the largest negative values of the real part of the dielectric function as compared to all other plasmonic TiN films reported to date. Two-dimensional periodic arrays of TiN nanodisks are then fabricated, from which we validate that strong plasmonic resonances are supported. Our room-temperature deposition process can allow for fabricating complex plasmonic TiN nanostructures and be integrated into the fabrication of existing CMOS-based photonic devices to enhance their performance and functionalities.

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