High and Low Temperature Measurements of the Chromium Diffusivity in Silicon

1989 ◽  
Vol 163 ◽  
Author(s):  
J. Zhu ◽  
D. Barbier
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Deep Level ◽  
Boron Doped ◽  
Diffusivity Measurements ◽  
Doped Silicon ◽  
Data Points ◽  
Transient Spectroscopy ◽  
Association Time ◽  
Short Time

AbstractBy grouping high and low temperature diffusivity measurements in boron-doped silicon, a new diffusivity law for chromium in the 20–1050 °C temperature range has been established. High temperature diffusivities were deduced from erfc fits of chromium-boron pair profiles measured by means of Deep Level Transient Spectroscopy in chromium-plated substrates, after annealing for a short time in a lamp furnace. Low temperature diffusivities were derived from the association time constants of the chromium-boron pairing reaction in chromium-contaminated specimens. The whole data points were well fitted using the following expression for the diffusion coefficient: D= 2.6×10-3 exp(-0.81 ± 0.02 eV/kT). Because of the wide 1/T interval available, the migration enthalpy value is more accurate than the previous determinations using only high temperature diffusivity results.

scholarly journals Low temperature epitaxial growth of boron-doped silicon thin films

2018 ◽  
Author(s):  
Marta Chrostowski ◽  
Rafaël Peyronnet ◽  
Wanghua Chen ◽  
Nicolas Vaissiere ◽  
José Alvarez ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Silicon Thin Films ◽  
Boron Doped ◽  
Doped Silicon

Investigation of carrier compensation traps in n−-GaN drift layer by high-temperature deep-level transient spectroscopy

2020 ◽  
Vol 117 (11) ◽  
pp. 112103
Author(s):  
Huayang Huang ◽  
Xuelin Yang ◽  
Shan Wu ◽  
Jianfei Shen ◽  
Xiaoguang He ◽  
...  
Keyword(s):  
High Temperature ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Transient Spectroscopy ◽  
Drift Layer

scholarly journals Effect of Thermal Treatments on Quality and Aroma of Watermelon Juice

2018 ◽  
Vol 2018 ◽  
pp. 1-7 ◽  
Author(s):  
Yubin Wang ◽  
Wu Li ◽  
Yue Ma ◽  
Xiaoyan Zhao ◽  
Chao Zhang
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Shelf Life ◽  
Color Difference ◽  
Thermal Treatments ◽  
Watermelon Juice ◽  
High Temperature Short Time ◽  
Long Time ◽  
Ultrahigh Temperature ◽  
Short Time

The effect of thermal treatments on the quality and aroma of watermelon juice was evaluated. Watermelon juice was pasteurized via ultrahigh temperature (UHT, pasteurized at 135°C for 2 s), low temperature long time (LTLT, pasteurized at 60°C for 30 min), and high temperature short time (HTST, pasteurized at 100°C for 5 min), respectively. UHT and LTLT reduced the total flora count and maintained the color of the pasteurized juice, while the HTST led to a significant color difference. A total of 27, 21, 22, and 21 volatiles were identified in the unpasteurized juice, UHT, LTLT, and HTST, respectively. The typical watermelon aroma, including (3Z)-3-nonen-1-ol, (E)-2-nonen-1-ol, 1-nonanal, (2E)-2-nonenal, and (E,Z)-2,6-nonadienal, was abundant in the LTLT. Consequently, the aroma of the LTLT was similar to that of unpasteurized juice. Moreover, the shelf life of the LTLT reached 101 and 14 days at 4 and 25°C, respectively. Hence, the LTLT was the best way to maintain the quality and aroma of watermelon juice.

Impact of Low Temperature Hydrogenation on Recombination Activity of Dislocations in Silicon

2005 ◽  
Vol 108-109 ◽  
pp. 151-156
Author(s):  
O.F. Vyvenko ◽  
Martin Kittler ◽  
Winfried Seifert
Keyword(s):  
Low Temperature ◽  
Deep Level ◽  
Tight Binding ◽  
Beam Current ◽  
Electron Beam Current ◽  
Recombination Activity ◽  
Electrical Field ◽  
Dissolved Iron ◽  
Capacitance Voltage ◽  
Transient Spectroscopy

Silicon samples doped with gallium and intentionally contaminated with iron have been studied by means of electron beam current (EBIC), capacitance voltage (CV) and deep level transient spectroscopy (DLTS) methods. Reverse bias anneal (RBA) treatments at temperatures of 390-420K were used to move hydrogen and dissolved iron atoms away from the surface. A new procedure was developed to find dislocations lying on desirable depth from the surface and to analyze the depth distribution of their recombination contrast. Iron contaminated dislocations do not noticeably change their recombination activity when kept in an electrical field as high as 104 V/cm at 420K for several hours. This implies a tight binding of iron atoms at dislocations. The binding energy of iron with dislocations seems to be much larger than for Fe-Ga and H-Ga pairs. Low temperature hydrogenation of iron contaminated dislocations does not produce any passivation effect. In opposite, the recombination activity of the dislocations significantly increases after RBA treatment.

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